10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
916 2011 High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
311 2009 Balancing SET/RESET Pulse for YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
221 2012 Complete experimental test of kinetic models for rapid alloy solidification JA Kittl, PG Sanders, MJ Aziz, DP Brunco, MO Thompson
Acta materialia 48 (20), 4797-4811, 2000
163 2000 Ni-and Co-based silicides for advanced CMOS applications JA Kittl, A Lauwers, O Chamirian, M Van Dal, A Akheyar, M De Potter, ...
Microelectronic Engineering 70 (2-4), 158-165, 2003
151 2003 Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n + type polycrystalline silicon lines JA Kittl, DA Prinslow, PP Apte, MF Pas
Applied physics letters 67 (16), 2308-2310, 1995
127 1995 Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
119 2012 Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells L Goux, K Opsomer, R Degraeve, R Müller, C Detavernier, DJ Wouters, ...
Applied Physics Letters 99 (5), 2011
119 2011 Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition G Rampelberg, M Schaekers, K Martens, Q Xie, D Deduytsche, ...
Applied Physics Letters 98 (16), 2011
117 2011 SoC logic compatible multi-bit FeMFET weight cell for neuromorphic applications K Ni, JA Smith, B Grisafe, T Rakshit, B Obradovic, JA Kittl, M Rodder, ...
2018 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2018
116 2018 Ultralow sub-500nA operating current high-performance TiN\Al2 O3 \HfO2 \Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
96 2012 High current effects in silicide films for sub-0.25/spl mu/m VLSI technologies K Banerjee, C Hu, A Amerasekera, JA Kittl
1998 IEEE International Reliability Physics Symposium Proceedings. 36th …, 1998
94 1998 Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
91 2012 Work function of Ni silicide phases on HfSiON and SiO/sub 2: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates JA Kittl, MA Pawlak, A Lauwers, C Demeurisse, K Opsomer, KG Anil, ...
IEEE electron device letters 27 (1), 34-36, 2005
88 2005 A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory S Yu, Y Yin Chen, X Guan, HS Philip Wong, JA Kittl
Applied Physics Letters 100 (4), 2012
86 2012 Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies JA Kittl, QZ Hong
Thin Solid Films 320 (1), 110-121, 1998
86 1998 Ni based silicides for 45 nm CMOS and beyond A Lauwers, JA Kittl, MJH Van Dal, O Chamirian, MA Pawlak, M de Potter, ...
Materials Science and Engineering: B 114, 29-41, 2004
85 2004 Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments R Degraeve, P Roussel, L Goux, D Wouters, J Kittl, L Altimime, M Jurczak, ...
2010 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2010
82 2010 Nonequilibrium partitioning during rapid solidification of Si As alloys JA Kittl, MJ Aziz, DP Brunco, MO Thompson
Journal of crystal growth 148 (1-2), 172-182, 1995
82 1995 Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device Y Yin Chen, G Pourtois, C Adelmann, L Goux, B Govoreanu, R Degreave, ...
Applied Physics Letters 100 (11), 2012
80 2012 