Jongmin Kim
Jongmin Kim
Korea Advance Nano Fab Center
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Effects of rapid thermal annealing on the optical properties of 1.3 um InGaAlAs multi-quantum wells grown by digital-alloy molecular beam epitaxy
JD Song, JS Yu, J Kim, SJ Bae, YT Lee
Applied Physics Letter 80 (24), 4650-4652, 2002
Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper
DH Lee, HK Lee, JS Yu, SJ Bae, JH Choi, DH Kim, IC Ju, KM Song, ...
Semiconductor Science and Technology 26, 055014, 2011
Lateral composition modulation in GaP/InP short-period superlattices grown by solid source molecular beam epitaxy
JD Song, YW Ok, J Kim, YT Lee, TY Seong
Journal of Applied Physics 90 (10), 5086-5089, 2001
Characteristics of indium incorporation in InGaN/GaN multiple quantum wells grown on a-plane and c-plane GaN
KM Song, JM Kim, BK Kang, DH Yoon, S Kang, SW Lee, SN Lee
Applied Physics Letters 100, 212103, 2012
Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source
J Kim, JD Song, YT Lee, J Kim
Journal of Crystal Growth 265, 8-13, 2004
Molecular Beam Epitaxial Growth of High-Quality InP/InGaAs/InP Heterostructure with Polycrystalline GaAs and GaP Decomposition Sources
JD Song, J Kim, YT Lee
Japanese Journal of Applied Physics 39 (4B), L347-L350, 2000
Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration
J Jeong, SK Kim, J Kim, DM Geum, J Park, JH Jang, S Kim
IEEE Transactions on Electron Devices 68 (5), 2205-2211, 2021
Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with GaP decomposition source
JD Song, J Kim, YT Lee
Applied Physics A 72, 625-627, 2001
Properties of Si doped a-plane GaN with different SiH4 flow rates
KM Song, CZ Kim, JM Kim, SM Hwang, HG Kim, DH Yoon
Japanese Journal of Applied Physics 50 (5), 055502, 2011
Parametric study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy
JD Song, DC Heo, IK Han, J Kim, YT Lee, SH Park
Applied Physics Letters 84 (6), 873-875, 2004
White light emission of monolithic InGaN/GaN grown on morphology-controlled nanostructured GaN templates
KM Song, DH Kim, JM Kim, CY Cho, JH Choi, K Kim, J Park, H Kim
Nanotechnology 28 (22), 225703, 2017
Reduced anisotropy of a-plane GaN layers grown by metalorganic vapor phase epitaxy
KM Song, JM Kim, DH Lee, DH Kang, WK Park, CS Shin, CG Ko, ...
Journal of Crystal Growth 315, 178-182, 2011
Characteristics of InAIAs/InP and InAIP/GaAs native oxides
SJ Bae, JM Kim, CY Park, YT Lee
Solid-State Electronics 50, 1625-1628, 2006
Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography
P Offermans, PM Koenraad, JH Wolter, JK Jin Dong Song, SJ Bae, ...
Applied Physics Letter 82 (8), 1191-1193, 2003
Growth and characterization of a-plane InGaN/GaN multiple quantum well LEDs grown on r-plane sapphire
KM Song, JM Kim, CS Shin, SM Hwang, Dae-Ho Yoon
Semiconductor Science and Technology 27, 015011, 2012
Occurrence of CuPt-A and CuPt-B type ordering in GaInP layers grown by solid source molecuar beam epitaxy
JD Song, YW Ok, J Kim, YT Lee, TY Seong
Applied Surface Science 183, 33-38, 2001
Vertical InGaAs Biristor for sub-1 V Operation
WK Kim, P Bidenko, J Kim, J Shim, JK Han, S Kim, DM Geum, S Kim, ...
IEEE Electron Device Letters 42 (5), 681-683, 2021
Influence of AlGaN/GaN/InGaN superlattice on the characteristics of LEDs grown by metalorganic chemical vapor deposition
KM Song, PG Kang, HS Shin, JM Kim, WK Park, CG Ko, HW Shim, ...
Journal of Crystal Growth 312, 2847-2851, 2010
Mg doping effect in nonpolar a-plane GaN
KM Song, JM Kim, CZ Kim, H Kim
Japanese Journal of Applied Physics 50 (12), 121002, 2011
Optical characterization of digital alloy In0.49Ga0.51P/In0.49(Ga0.6Al0.4)0.51P multi-quantum wells grown by molecular-beam epitaxy
J Kim, CY Park, YT Lee, JD Song
Journal of Applied Physics 100, 093503, 2006
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