| Evolution of electrical, chemical, and structural properties of transparent and conducting chemically derived graphene thin films C Mattevi, G Eda, S Agnoli, S Miller, KA Mkhoyan, O Celik, ... Advanced functional materials 19 (16), 2577-2583, 2009 | 1972 | 2009 |
| Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits ML Green, EP Gusev, R Degraeve, EL Garfunkel Journal of Applied Physics 90 (5), 2057-2121, 2001 | 1045 | 2001 |
| Photochemical water oxidation by crystalline polymorphs of manganese oxides: structural requirements for catalysis DM Robinson, YB Go, M Mui, G Gardner, Z Zhang, D Mastrogiovanni, ... Journal of the American chemical Society 135 (9), 3494-3501, 2013 | 652 | 2013 |
| Electrolyte design for LiF-rich solid–electrolyte interfaces to enable high-performance microsized alloy anodes for batteries J Chen, X Fan, Q Li, H Yang, MR Khoshi, Y Xu, S Hwang, L Chen, X Ji, ... Nature Energy 5 (5), 386-397, 2020 | 640 | 2020 |
| Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ... Microelectronic Engineering 59 (1-4), 341-349, 2001 | 543 | 2001 |
| GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008 | 491 | 2008 |
| Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ... Applied Physics Letters 87 (25), 2005 | 463 | 2005 |
| HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition MM Frank, GD Wilk, D Starodub, T Gustafsson, E Garfunkel, YJ Chabal, ... Applied Physics Letters 86 (15), 2005 | 407 | 2005 |
| Intermixing at the tantalum oxide/silicon interface in gate dielectric structures GB Alers, DJ Werder, Y Chabal, HC Lu, EP Gusev, E Garfunkel, ... Applied Physics Letters 73 (11), 1517-1519, 1998 | 404 | 1998 |
| Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications EP Gusev, C Cabral Jr, M Copel, C D’emic, M Gribelyuk Microelectronic Engineering 69 (2-4), 145-151, 2003 | 395 | 2003 |
| Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3 (001) heterojunction SA Chambers, MH Engelhard, V Shutthanandan, Z Zhu, TC Droubay, ... Surface Science Reports 65 (10-12), 317-352, 2010 | 350 | 2010 |
| Band offsets of ultrathin high- oxide films with Si E Bersch, S Rangan, RA Bartynski, E Garfunkel, E Vescovo Physical review B 78 (8), 085114, 2008 | 329 | 2008 |
| Titanium and reduced titania overlayers on titanium dioxide (110) JT Mayer, U Diebold, TE Madey, E Garfunkel Journal of Electron Spectroscopy and Related Phenomena 73 (1), 1-11, 1995 | 327 | 1995 |
| Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ... Journal of Applied Physics 87 (9), 4449-4455, 2000 | 323 | 2000 |
| TiO2 by XPS U Diebold, TE Madey Surface Science Spectra 4 (3), 227-231, 1996 | 317 | 1996 |
| P-doped porous carbon as metal free catalysts for selective aerobic oxidation with an unexpected mechanism MA Patel, F Luo, MR Khoshi, E Rabie, Q Zhang, CR Flach, R Mendelsohn, ... Acs Nano 10 (2), 2305-2315, 2016 | 296 | 2016 |
| High temperature stability in lanthanum and zirconia-based gate dielectrics JP Maria, D Wicaksana, AI Kingon, B Busch, H Schulte, E Garfunkel, ... Journal of applied physics 90 (7), 3476-3482, 2001 | 289 | 2001 |
| Growth and characterization of ultrathin nitrided silicon oxide films EP Gusev, HC Lu, EL Garfunkel, T Gustafsson, ML Green IBM journal of research and development 43 (3), 265-286, 1999 | 278 | 1999 |
| The coadsorption of potassium and CO on the pt (111) crystal surface: A TDS, HREELS and UPS study JE Crowell, EL Garfunkel, GA Somorjai Surface Science 121 (2), 303-320, 1982 | 275 | 1982 |
| Growth mechanism of thin silicon oxide films on Si (100) studied by medium-energy ion scattering EP Gusev, HC Lu, T Gustafsson, E Garfunkel Physical Review B 52 (3), 1759, 1995 | 258 | 1995 |
