p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ... Journal of Applied Physics 128 (8), 2020 | 22 | 2020 |
Hillock assisted p-type enhancement in N-polar GaN: Mg films grown by MOCVD E Rocco, O Licata, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, ... Scientific Reports 10 (1), 1426, 2020 | 21 | 2020 |
The effect of annealing on photoluminescence from defects in ammonothermal GaN MA Reshchikov, DO Demchenko, D Ye, O Andrieiev, M Vorobiov, ... Journal of Applied Physics 131 (3), 2022 | 14 | 2022 |
Photoluminescence related to Ca in GaN MA Reshchikov, DO Demchenko, M Vorobiov, O Andrieiev, B McEwen, ... Physical Review B 106 (3), 035206, 2022 | 13 | 2022 |
Stability of the CNHi Complex and the Blue Luminescence Band in GaN MA Reshchikov, O Andrieiev, M Vorobiov, B McEwen, ... physica status solidi (b) 258 (12), 2100392, 2021 | 12 | 2021 |
P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing V Meyers, E Rocco, K Hogan, B McEwen, M Shevelev, V Sklyar, K Jones, ... Journal of Applied Physics 130 (8), 2021 | 9 | 2021 |
Thermal annealing of GaN implanted with Be MA Reshchikov, O Andrieiev, M Vorobiov, D Ye, DO Demchenko, ... Journal of Applied Physics 131 (12), 2022 | 8 | 2022 |
MOCVD Growth and Characterization of Be-Doped GaN B McEwen, MA Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ... ACS Applied Electronic Materials 4 (8), 3780-3785, 2022 | 7 | 2022 |
Dual nature of the acceptor in GaN: Evidence from photoluminescence MA Reshchikov, M Vorobiov, O Andrieiev, DO Demchenko, B McEwen, ... Physical Review B 108 (7), 075202, 2023 | 5 | 2023 |
Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching V Meyers, E Rocco, K Hogan, S Tozier, B McEwen, I Mahaboob, ... Journal of Electronic Materials 49, 3481-3489, 2020 | 5 | 2020 |
Photoluminescence from GaN implanted with Be and F MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ... physica status solidi (b) 260 (9), 2300131, 2023 | 4 | 2023 |
Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition MA Reshchikov, M Vorobiov, O Andrieiev, B McEwen, E Rocco, V Meyers, ... physica status solidi (b) 260 (8), 2200487, 2023 | 4 | 2023 |
Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency E Rocco, I Mahaboob, K Hogan, V Meyers, B McEwen, LD Bell, ... Journal of Applied Physics 129 (19), 2021 | 4 | 2021 |
Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor I Mahaboob, RJ Reinertsen, B McEwen, K Hogan, E Rocco, JA Melendez, ... Experimental Biology and Medicine 246 (5), 523-528, 2021 | 4 | 2021 |
Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface B McEwen, I Mahaboob, E Rocco, K Hogan, V Meyers, R Green, ... Journal of Electronic Materials 50, 80-84, 2021 | 4 | 2021 |
Novel gyrotron beam annealing method for Mg-implanted bulk GaN K Hogan, S Tozier, E Rocco, I Mahaboob, V Meyers, B McEwen, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 4 | 2019 |
Automatic noise reduction of extremely sparse vocalisations for bioacoustic monitoring B McEwen, K Soltero, S Gutschmidt, A Bainbridge-Smith, J Atlas, R Green Ecological Informatics 77, 102280, 2023 | 3 | 2023 |
In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application K Hogan, M Rodriguez, E Rocco, V Meyers, B McEwen, ... AIP Advances 10 (8), 2020 | 2 | 2020 |
Photoluminescence from CdGa and HgGa acceptors in GaN MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ... Journal of Applied Physics 135 (15), 2024 | 1 | 2024 |
III-N material based deep UV APDs for emergent defense, space, and commercial imaging and spectroscopy applications P Oduor, B McEwen, KK Choi, F Shahedipour-Sandvik, A Dutta Image Sensing Technologies: Materials, Devices, Systems, and Applications X …, 2023 | 1 | 2023 |