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Benjamin McEwen
Benjamin McEwen
SUNY Polytechnic Institute
Verified email at sunypoly.edu
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Cited by
Cited by
Year
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ...
Journal of Applied Physics 128 (8), 2020
222020
Hillock assisted p-type enhancement in N-polar GaN: Mg films grown by MOCVD
E Rocco, O Licata, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, ...
Scientific Reports 10 (1), 1426, 2020
212020
The effect of annealing on photoluminescence from defects in ammonothermal GaN
MA Reshchikov, DO Demchenko, D Ye, O Andrieiev, M Vorobiov, ...
Journal of Applied Physics 131 (3), 2022
142022
Photoluminescence related to Ca in GaN
MA Reshchikov, DO Demchenko, M Vorobiov, O Andrieiev, B McEwen, ...
Physical Review B 106 (3), 035206, 2022
132022
Stability of the CNHi Complex and the Blue Luminescence Band in GaN
MA Reshchikov, O Andrieiev, M Vorobiov, B McEwen, ...
physica status solidi (b) 258 (12), 2100392, 2021
122021
P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing
V Meyers, E Rocco, K Hogan, B McEwen, M Shevelev, V Sklyar, K Jones, ...
Journal of Applied Physics 130 (8), 2021
92021
Thermal annealing of GaN implanted with Be
MA Reshchikov, O Andrieiev, M Vorobiov, D Ye, DO Demchenko, ...
Journal of Applied Physics 131 (12), 2022
82022
MOCVD Growth and Characterization of Be-Doped GaN
B McEwen, MA Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ...
ACS Applied Electronic Materials 4 (8), 3780-3785, 2022
72022
Dual nature of the acceptor in GaN: Evidence from photoluminescence
MA Reshchikov, M Vorobiov, O Andrieiev, DO Demchenko, B McEwen, ...
Physical Review B 108 (7), 075202, 2023
52023
Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching
V Meyers, E Rocco, K Hogan, S Tozier, B McEwen, I Mahaboob, ...
Journal of Electronic Materials 49, 3481-3489, 2020
52020
Photoluminescence from GaN implanted with Be and F
MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ...
physica status solidi (b) 260 (9), 2300131, 2023
42023
Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition
MA Reshchikov, M Vorobiov, O Andrieiev, B McEwen, E Rocco, V Meyers, ...
physica status solidi (b) 260 (8), 2200487, 2023
42023
Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency
E Rocco, I Mahaboob, K Hogan, V Meyers, B McEwen, LD Bell, ...
Journal of Applied Physics 129 (19), 2021
42021
Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor
I Mahaboob, RJ Reinertsen, B McEwen, K Hogan, E Rocco, JA Melendez, ...
Experimental Biology and Medicine 246 (5), 523-528, 2021
42021
Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface
B McEwen, I Mahaboob, E Rocco, K Hogan, V Meyers, R Green, ...
Journal of Electronic Materials 50, 80-84, 2021
42021
Novel gyrotron beam annealing method for Mg-implanted bulk GaN
K Hogan, S Tozier, E Rocco, I Mahaboob, V Meyers, B McEwen, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019
42019
Automatic noise reduction of extremely sparse vocalisations for bioacoustic monitoring
B McEwen, K Soltero, S Gutschmidt, A Bainbridge-Smith, J Atlas, R Green
Ecological Informatics 77, 102280, 2023
32023
In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application
K Hogan, M Rodriguez, E Rocco, V Meyers, B McEwen, ...
AIP Advances 10 (8), 2020
22020
Photoluminescence from CdGa and HgGa acceptors in GaN
MA Reshchikov, O Andrieiev, M Vorobiov, DO Demchenko, B McEwen, ...
Journal of Applied Physics 135 (15), 2024
12024
III-N material based deep UV APDs for emergent defense, space, and commercial imaging and spectroscopy applications
P Oduor, B McEwen, KK Choi, F Shahedipour-Sandvik, A Dutta
Image Sensing Technologies: Materials, Devices, Systems, and Applications X …, 2023
12023
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