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Luca Seravalli
Luca Seravalli
IMEM-CNR Institute, Parma, Italy
Verified email at imem.cnr.it - Homepage
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Cited by
Cited by
Year
Quantum dot nanostructures and molecular beam epitaxy
S Franchi, G Trevisi, L Seravalli, P Frigeri
Progress in Crystal Growth and Characterization of Materials 47 (2-3), 166-195, 2003
1242003
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions
M Bosi, P Mazzolini, L Seravalli, R Fornari
Journal of Materials Chemistry C 8 (32), 10975-10992, 2020
1122020
The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures
L Seravalli, M Minelli, P Frigeri, P Allegri, V Avanzini, S Franchi
Applied physics letters 82 (14), 2341-2343, 2003
1112003
Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence
S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ...
Applied Surface Science 515, 146033, 2020
1052020
Quantum dot strain engineering of< equation>< font face='verdana'> In</font>< font face='verdana'> As</font>/< font face='verdana'> In</font>< font face='verdana'> Ga</font …
L Seravalli, M Minelli, P Frigeri, S Franchi, G Guizzetti, M Patrini, ...
Journal of applied physics 101 (2), 024313-024313-8, 2007
90*2007
Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 μm
L Seravalli, P Frigeri, M Minelli, P Allegri, V Avanzini, S Franchi
Applied Physics Letters 87 (6), 2005
672005
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
L Seravalli, G Trevisi, P Frigeri, D Rivas, G Munoz-Matutano, I Suarez, ...
Applied physics letters 98 (17), 2011
662011
1.59 μm room temperature emission from metamorphic InAs∕ InGaAs quantum dots grown on GaAs substrates
L Seravalli, P Frigeri, G Trevisi, S Franchi
Applied Physics Letters 92 (21), 2008
622008
Carrier thermodynamics in quantum dots
S Sanguinetti, D Colombo, M Guzzi, E Grilli, M Gurioli, L Seravalli, ...
Physical Review B—Condensed Matter and Materials Physics 74 (20), 205302, 2006
582006
Molecular beam epitaxy: an overview
P Frigeri, L Seravalli, G Trevisi, S Franchi
Elsevier, 2016
502016
Defect passivation in strain engineered InAs/(InGa) As quantum dots
S Mazzucato, D Nardin, M Capizzi, A Polimeni, A Frova, L Seravalli, ...
Materials Science and Engineering: C 25 (5-8), 830-834, 2005
492005
The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures
L Seravalli, G Trevisi, P Frigeri, S Franchi, M Geddo, G Guizzetti
Nanotechnology 20 (27), 275703, 2009
482009
Effects of the quantum dot ripening in high-coverage InAs∕ GaAs nanostructures
P Frigeri, L Nasi, M Prezioso, L Seravalli, G Trevisi, E Gombia, R Mosca, ...
Journal of Applied Physics 102 (8), 2007
482007
Full Dynamic Control of In-plane Elastic Stress Tensor in Nanomembranes
J Martín-Sánchez, R Trotta, G Piredda, C Schimpf, G Trevisi, L Seravalli, ...
arXiv preprint arXiv:1511.08192, 2015
462015
Metamorphic quantum dots: quite different nanostructures
L Seravalli, P Frigeri, L Nasi, G Trevisi, C Bocchi
Journal of Applied Physics 108 (6), 2010
432010
Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping
J Gomis-Bresco, G Muñoz-Matutano, J Martínez-Pastor, B Alén, ...
New Journal of physics 13 (2), 023022, 2011
422011
Enhancement of Raman Scattering and Exciton/Trion Photoluminescence of Monolayer and Few-Layer MoS2 by Ag Nanoprisms and Nanoparticles: Shape and …
I Irfan, S Golovynskyi, M Bosi, L Seravalli, OA Yeshchenko, B Xue, ...
The Journal of Physical Chemistry C 125 (7), 4119-4132, 2021
412021
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs
V Bellani, C Bocchi, T Ciabattoni, S Franchi, P Frigeri, P Galinetto, ...
The European Physical Journal B 56, 217-222, 2007
392007
A Review on Chemical Vapour Deposition of Two-Dimensional MoS2 Flakes
L Seravalli, M Bosi
Materials 14 (24), 7590, 2021
382021
Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: effects of InGaAs capping
L Seravalli, C Bocchi, G Trevisi, P Frigeri
Journal of Applied Physics 108 (11), 2010
382010
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