| Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ... 2D Materials 5 (3), 031002, 2018 | 91 | 2018 |
| Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young Applied Physics Letters 111 (3), 2017 | 75 | 2017 |
| Contact Engineering for Dual-Gate MoS2 Transistors Using O2 Plasma Exposure P Bolshakov, CM Smyth, A Khosravi, P Zhao, PK Hurley, CL Hinkle, ... ACS Applied Electronic Materials 1 (2), 210-219, 2019 | 57 | 2019 |
| Dual-Gate MoS2 Transistors with sub-10 nm Top-Gate High-k Dielectrics P Bolshakov, A Khosravi, P Zhao, PK Hurley, CL Hinkle, RM Wallace, ... Applied Physics Letters 112 (25), 253502, 2018 | 52 | 2018 |
| Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy P Zhao, A Azcatl, YY Gomeniuk, P Bolshakov, M Schmidt, SJ McDonnell, ... ACS applied materials & interfaces 9 (28), 24348-24356, 2017 | 50 | 2017 |
| Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric P Zhao, A Azcatl, P Bolshakov, J Moon, CL Hinkle, PK Hurley, ... Journal of Vacuum Science & Technology B 35 (1), 2017 | 50 | 2017 |
| Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts CM Smyth, LA Walsh, P Bolshakov, M Catalano, R Addou, L Wang, J Kim, ... ACS Applied Nano Materials 2 (1), 75-88, 2018 | 42 | 2018 |
| Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young Microelectronic Engineering 178, 190-193, 2017 | 37 | 2017 |
| Electrical characterization of top-gated molybdenum disulfide metal–oxide–semiconductor capacitors with high-k dielectrics P Zhao, PB Vyas, S McDonnell, P Bolshakov-Barrett, A Azcatl, CL Hinkle, ... Microelectronic Engineering 147, 151-154, 2015 | 35 | 2015 |
| Understanding the Impact of Annealing on Interface and Border Traps in the Cr/HfO2/Al2O3/MoS2 System P Zhao, A Padovani, P Bolshakov, A Khosravi, L Larcher, PK Hurley, ... ACS Applied Electronic Materials 1 (8), 1372-1377, 2019 | 25 | 2019 |
| Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes CM Smyth, LA Walsh, P Bolshakov, M Catalano, M Schmidt, B Sheehan, ... 2D Materials 6 (4), 045020, 2019 | 16 | 2019 |
| Evaluation of few-layer MoS2 transistors with a top gate and HfO2 dielectric CD Young, P Zhao, P Bolshakov-Barrett, A Azcatl, PK Hurley, ... ECS Transactions 75 (5), 153, 2016 | 14 | 2016 |
| Investigating interface states and oxide traps in the MoS2/oxide/Si system E Coleman, G Mirabelli, P Bolshakov, P Zhao, E Caruso, F Gity, ... Solid-State Electronics 186, 108123, 2021 | 7 | 2021 |
| Investigation of critical interfaces in few-layer MoS2 field effect transistors with high-k dielectrics CD Young, P Bolshakov, P Zhao, C Smyth, A Khosravi, PK Hurley, ... ECS Transactions 80 (1), 219, 2017 | 7 | 2017 |
| Top-gated MoS2 capacitors and transistors with high-k dielectrics for interface study P Zhao, A Azcatl, P Bolshakov-Barrett, RM Wallace, CD Young, PK Hurley 2016 International Conference on Microelectronic Test Structures (ICMTS …, 2016 | 7 | 2016 |
| Impact of Al2O3 deposition temperature on the performance and initial stability of nanocrystalline ZnO thin-film transistors RA Rodriguez-Davila, RA Chapman, P Bolshakov, CD Young, ... Microelectronic Engineering 217, 111114, 2019 | 6 | 2019 |
| Understanding the effects of low-temperature passivation and annealing on ZnO TFTs test structures RA Rodriguez-Davila, P Bolshakov, CD Young, M Quevedo-Lopez 2019 IEEE 32nd International Conference on Microelectronic Test Structures …, 2019 | 2 | 2019 |
| Relatively low-temperature processing and its impact on device performance and reliability CD Young, P Bolshakov, RAR Davila, P Zhao, C Smyth, ... ECS Transactions 90 (1), 89, 2019 | 1 | 2019 |
| Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric P Bolshakov, RA Rodriguez-Davila, M Quevedo-Lopez, CD Young 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 1 | 2019 |
| Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2field-effect-transistors P Bolshakov, P Zhao, CM Smyth, A Azcatl, RM Wallace, CD Young, ... 2017 International Conference of Microelectronic Test Structures (ICMTS), 1-4, 2017 | 1 | 2017 |
Chadwin D. YoungUniversity of Texas at DallasVerified email at utdallas.edu
