| Size-dependent photoconductivity in MBE-grown GaN− nanowires R Calarco, M Marso, T Richter, AI Aykanat, R Meijers, A vd Hart, T Stoica, ... Nano letters 5 (5), 981-984, 2005 | 608 | 2005 |
| Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy R Calarco, RJ Meijers, RK Debnath, T Stoica, E Sutter, H Lüth Nano letters 7 (8), 2248-2251, 2007 | 312 | 2007 |
| Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111) RK Debnath, R Meijers, T Richter, T Stoica, R Calarco, H Lüth Applied physics letters 90 (12), 123117, 2007 | 271 | 2007 |
| Photoluminescence and intrinsic properties of MBE-grown InN nanowires T Stoica, RJ Meijers, R Calarco, T Richter, E Sutter, H Lüth Nano letters 6 (7), 1541-1547, 2006 | 175 | 2006 |
| Interface and wetting layer effect on the catalyst‐free nucleation and growth of GaN nanowires T Stoica, E Sutter, RJ Meijers, RK Debnath, R Calarco, H Lüth, ... Small 4 (6), 751-754, 2008 | 166 | 2008 |
| Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe (111) M Liebmann, C Rinaldi, D Di Sante, J Kellner, C Pauly, RN Wang, ... Advanced Materials 28 (3), 560-565, 2016 | 150 | 2016 |
| Interface formation of two-and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices J Momand, R Wang, JE Boschker, MA Verheijen, R Calarco, BJ Kooi Nanoscale 7 (45), 19136-19143, 2015 | 136 | 2015 |
| Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity S Fernández-Garrido, X Kong, T Gotschke, R Calarco, L Geelhaar, ... Nano letters 12 (12), 6119-6125, 2012 | 129 | 2012 |
| MBE growth optimization of InN nanowires T Stoica, R Meijers, R Calarco, T Richter, H Lüth Journal of crystal growth 290 (1), 241-247, 2006 | 123 | 2006 |
| GaN-nanowhiskers: MBE-growth conditions and optical properties R Meijers, T Richter, R Calarco, T Stoica, HP Bochem, M Marso, H Lüth Journal of crystal growth 289 (1), 381-386, 2006 | 123 | 2006 |
| The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements N Thillosen, K Sebald, H Hardtdegen, R Meijers, R Calarco, S Montanari, ... Nano letters 6 (4), 704-708, 2006 | 122 | 2006 |
| Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer T Schumann, T Gotschke, F Limbach, T Stoica, R Calarco Nanotechnology 22 (9), 095603, 2011 | 116 | 2011 |
| Surface-induced effects in GaN nanowires R Calarco, T Stoica, O Brandt, L Geelhaar Journal of materials research 26 (17), 2157-2168, 2011 | 106 | 2011 |
| Franz− Keldysh effect in GaN nanowires A Cavallini, L Polenta, M Rossi, T Stoica, R Calarco, RJ Meijers, T Richter, ... Nano letters 7 (7), 2166-2170, 2007 | 106 | 2007 |
| Green luminescence in Mg-doped GaN MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90 (3), 035207, 2014 | 101 | 2014 |
| Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires K Jeganathan, RK Debnath, R Meijers, T Stoica, R Calarco, ... Journal of applied physics 105 (12), 123707, 2009 | 93 | 2009 |
| Growth of Ge–Si (111) epitaxial layers: intermixing, strain relaxation and island formation N Motta, A Sgarlata, R Calarco, Q Nguyen, JC Cal, F Patella, A Balzarotti, ... Surface science 406 (1-3), 254-263, 1998 | 89 | 1998 |
| Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific reports 6 (1), 1-7, 2016 | 88 | 2016 |
| Flux quantization effects in InN nanowires T Richter, C Blömers, H Lüth, R Calarco, M Indlekofer, M Marso, ... Nano letters 8 (9), 2834-2838, 2008 | 88 | 2008 |
| Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate JE Boschker, J Momand, V Bragaglia, R Wang, K Perumal, A Giussani, ... Nano letters 14 (6), 3534-3538, 2014 | 80 | 2014 |
Jos E. BoschkerFerdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikVerified email at alumnus.utwente.nl
