Raffaella Calarco
Raffaella Calarco
CNR-IMM
Bestätigte E-Mail-Adresse bei cnr.it
Titel
Zitiert von
Zitiert von
Jahr
Size-dependent photoconductivity in MBE-grown GaN− nanowires
R Calarco, M Marso, T Richter, AI Aykanat, R Meijers, A vd Hart, T Stoica, ...
Nano letters 5 (5), 981-984, 2005
5992005
Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy
R Calarco, RJ Meijers, RK Debnath, T Stoica, E Sutter, H Lüth
Nano letters 7 (8), 2248-2251, 2007
3062007
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111)
RK Debnath, R Meijers, T Richter, T Stoica, R Calarco, H Lüth
Applied Physics Letters 90 (12), 123117, 2007
2682007
Photoluminescence and intrinsic properties of MBE-grown InN nanowires
T Stoica, RJ Meijers, R Calarco, T Richter, E Sutter, H Lüth
Nano letters 6 (7), 1541-1547, 2006
1732006
Interface and wetting layer effect on the catalyst‐free nucleation and growth of GaN nanowires
T Stoica, E Sutter, RJ Meijers, RK Debnath, R Calarco, H Lüth, ...
Small 4 (6), 751-754, 2008
1652008
Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe (111)
M Liebmann, C Rinaldi, D Di Sante, J Kellner, C Pauly, RN Wang, ...
Advanced Materials 28 (3), 560-565, 2016
1392016
Interface formation of two-and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices
J Momand, R Wang, JE Boschker, MA Verheijen, R Calarco, BJ Kooi
Nanoscale 7 (45), 19136-19143, 2015
1332015
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity
S Fernández-Garrido, X Kong, T Gotschke, R Calarco, L Geelhaar, ...
Nano letters 12 (12), 6119-6125, 2012
1302012
GaN-nanowhiskers: MBE-growth conditions and optical properties
R Meijers, T Richter, R Calarco, T Stoica, HP Bochem, M Marso, H Lüth
Journal of crystal growth 289 (1), 381-386, 2006
1222006
MBE growth optimization of InN nanowires
T Stoica, R Meijers, R Calarco, T Richter, H Lüth
Journal of crystal growth 290 (1), 241-247, 2006
1192006
The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements
N Thillosen, K Sebald, H Hardtdegen, R Meijers, R Calarco, S Montanari, ...
Nano letters 6 (4), 704-708, 2006
1192006
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
T Schumann, T Gotschke, F Limbach, T Stoica, R Calarco
Nanotechnology 22 (9), 095603, 2011
1132011
Franz− Keldysh effect in GaN nanowires
A Cavallini, L Polenta, M Rossi, T Stoica, R Calarco, RJ Meijers, T Richter, ...
Nano letters 7 (7), 2166-2170, 2007
1072007
Surface-induced effects in GaN nanowires
R Calarco, T Stoica, O Brandt, L Geelhaar
Journal of materials research 26 (17), 2157, 2011
1022011
Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires
K Jeganathan, RK Debnath, R Meijers, T Stoica, R Calarco, ...
Journal of applied physics 105 (12), 123707, 2009
942009
Green luminescence in Mg-doped GaN
MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ...
Physical Review B 90 (3), 035207, 2014
912014
Growth of Ge–Si (111) epitaxial layers: intermixing, strain relaxation and island formation
N Motta, A Sgarlata, R Calarco, Q Nguyen, JC Cal, F Patella, A Balzarotti, ...
Surface science 406 (1-3), 254-263, 1998
891998
Flux quantization effects in InN nanowires
T Richter, C Blömers, H Lüth, R Calarco, M Indlekofer, M Marso, ...
Nano letters 8 (9), 2834-2838, 2008
872008
Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials
V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific reports 6 (1), 1-7, 2016
802016
Doping concentration of GaN nanowires determined by opto-electrical measurements
T Richter, HLR Meijers, R Calarco, M Marso
Nano letters 8 (9), 3056-3059, 2008
802008
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