Raffaella Calarco

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Jos E. BoschkerFerdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikVerified email at alumnus.utwente.nl
Alessandro GiussaniSilanna SemiconductorVerified email at silanna.com
Valeria BragagliaIBM Research-Zurich (CH)Verified email at zurich.ibm.com
Stefano CecchiUniversity of Milano BicoccaVerified email at unimib.it
Fabrizio ArcipreteDepartment of Physics, University of Rome Tor VergataVerified email at roma2.infn.it
Oliver BrandtSenior scientist, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Eugenio ZalloWalter Schottky Institut and TUM School of Natural Sciences, Technische Universität MünchenVerified email at wsi.tum.de
B.J. KooiUniversity of GroningenVerified email at rug.nl
Jamo MomandPhotonisVerified email at nl.photonis.com
Ratan DebnathNational Institute of Standards and Technology (NIST), Gaithersburg, USAVerified email at nist.gov
Paul FonsProfessor at Keio UniversityVerified email at keio.jp
Antonio Massimiliano MioResearcher, Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e MicrosistemiVerified email at imm.cnr.it
Riccardo BertaccoDipartimento di Fisica Politecnico di MilanoVerified email at polimi.it
Silvia PicozziCNR-SPIN, Chieti, ItalyVerified email at spin.cnr.it
stefania priviteracataniaVerified email at cnr.it
Christian RinaldiPolitecnico di MilanoVerified email at polimi.it
Markus MorgensternRWTH Aachen UniversityVerified email at physik.rwth-aachen.de
Marcus LiebmannRWTH Aachen UniversityVerified email at physik.rwth-aachen.de
Marcel A VerheijenEindhoven University of TechnologyVerified email at tue.nl
Achim TrampertPaul-Drude-InstituteVerified email at pdi-berlin.de

Raffaella Calarco

CNR-IMM

Verified email at cnr.it

growth and epitaxy semiconductors chalcogenides


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Size-dependent photoconductivity in MBE-grown GaN− nanowires R Calarco, M Marso, T Richter, AI Aykanat, R Meijers, A vd Hart, T Stoica, ... Nano letters 5 (5), 981-984, 2005	643	2005
Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy R Calarco, RJ Meijers, RK Debnath, T Stoica, E Sutter, H Lüth Nano letters 7 (8), 2248-2251, 2007	325	2007
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111) RK Debnath, R Meijers, T Richter, T Stoica, R Calarco, H Lüth Applied physics letters 90 (12), 123117, 2007	291	2007
Photoluminescence and intrinsic properties of MBE-grown InN nanowires T Stoica, RJ Meijers, R Calarco, T Richter, E Sutter, H Lüth Nano letters 6 (7), 1541-1547, 2006	188	2006
Interface and wetting layer effect on the catalyst‐free nucleation and growth of GaN nanowires T Stoica, E Sutter, RJ Meijers, RK Debnath, R Calarco, H Lüth, ... Small 4 (6), 751-754, 2008	181	2008
Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe (111) M Liebmann, C Rinaldi, D Di Sante, J Kellner, C Pauly, RN Wang, ... Advanced materials 28 (3), 560-565, 2016	179	2016
Interface formation of two-and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices J Momand, R Wang, JE Boschker, MA Verheijen, R Calarco, BJ Kooi Nanoscale 7 (45), 19136-19143, 2015	153	2015
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity S Fernández-Garrido, X Kong, T Gotschke, R Calarco, L Geelhaar, ... Nano letters 12 (12), 6119-6125, 2012	135	2012
MBE growth optimization of InN nanowires T Stoica, R Meijers, R Calarco, T Richter, H Lüth Journal of crystal growth 290 (1), 241-247, 2006	133	2006
Green luminescence in Mg-doped GaN MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90 (3), 035207, 2014	132	2014
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer T Schumann, T Gotschke, F Limbach, T Stoica, R Calarco Nanotechnology 22 (9), 095603, 2011	126	2011
GaN-nanowhiskers: MBE-growth conditions and optical properties R Meijers, T Richter, R Calarco, T Stoica, HP Bochem, M Marso, H Lüth Journal of crystal growth 289 (1), 381-386, 2006	126	2006
Ferroelectric control of the spin texture in GeTe C Rinaldi, S Varotto, M Asa, J Sławińska, J Fujii, G Vinai, S Cecchi, ... Nano letters 18 (5), 2751-2758, 2018	125	2018
The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements N Thillosen, K Sebald, H Hardtdegen, R Meijers, R Calarco, S Montanari, ... Nano letters 6 (4), 704-708, 2006	124	2006
Surface-induced effects in GaN nanowires R Calarco, T Stoica, O Brandt, L Geelhaar Journal of materials research 26 (17), 2157-2168, 2011	122	2011
Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific reports 6 (1), 23843, 2016	110	2016
Franz− Keldysh effect in GaN nanowires A Cavallini, L Polenta, M Rossi, T Stoica, R Calarco, RJ Meijers, T Richter, ... Nano letters 7 (7), 2166-2170, 2007	108	2007
Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires K Jeganathan, RK Debnath, R Meijers, T Stoica, R Calarco, ... Journal of applied physics 105 (12), 123707, 2009	100	2009
Flux quantization effects in InN nanowires T Richter, C Blömers, H Lüth, R Calarco, M Indlekofer, M Marso, ... Nano letters 8 (9), 2834-2838, 2008	93	2008
Growth of Ge–Si (111) epitaxial layers: intermixing, strain relaxation and island formation N Motta, A Sgarlata, R Calarco, Q Nguyen, JC Cal, F Patella, A Balzarotti, ... Surface science 406 (1-3), 254-263, 1998	91	1998

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