| Electronic transport properties of individual chemically reduced graphene oxide sheets C Gómez-Navarro, RT Weitz, AM Bittner, M Scolari, A Mews, M Burghard, ... Nano letters 7 (11), 3499-3503, 2007 | 2682 | 2007 |
| Contact and edge effects in graphene devices EJH Lee, K Balasubramanian, RT Weitz, M Burghard, K Kern Nature nanotechnology 3 (8), 486-490, 2008 | 808 | 2008 |
| Broken-symmetry states in doubly gated suspended bilayer graphene RT Weitz, MT Allen, BE Feldman, J Martin, A Yacoby Science 330 (6005), 812-816, 2010 | 447 | 2010 |
| Fabry-Pérot resonances in one-dimensional plasmonic nanostructures J Dorfmüller, R Vogelgesang, RT Weitz, C Rockstuhl, C Etrich, T Pertsch, ... Nano letters 9 (6), 2372-2377, 2009 | 325 | 2009 |
| Organic n-channel transistors based on core-cyanated perylene carboxylic diimide derivatives RT Weitz, K Amsharov, U Zschieschang, EB Villas, DK Goswami, ... Journal of the American Chemical Society 130 (14), 4637-4645, 2008 | 279 | 2008 |
| Electronic decoupling of an epitaxial graphene monolayer by gold intercalation I Gierz, T Suzuki, RT Weitz, DS Lee, B Krauss, C Riedl, U Starke, ... Physical Review B 81 (23), 235408, 2010 | 264 | 2010 |
| Plasmonic nanostructures in aperture‐less scanning near‐field optical microscopy (aSNOM) R Vogelgesang, J Dorfmüller, R Esteban, RT Weitz, A Dmitriev, K Kern physica status solidi (b) 245 (10), 2255-2260, 2008 | 251 | 2008 |
| Polymer nanofibers via nozzle-free centrifugal spinning RT Weitz, L Harnau, S Rauschenbach, M Burghard, K Kern Nano letters 8 (4), 1187-1191, 2008 | 244 | 2008 |
| Inkjet-printed energy storage device using graphene/polyaniline inks Y Xu, I Hennig, D Freyberg, AJ Strudwick, MG Schwab, T Weitz, KCP Cha Journal of Power Sources 248, 483-488, 2014 | 195 | 2014 |
| Local compressibility measurements of correlated states in suspended bilayer graphene J Martin, BE Feldman, RT Weitz, MT Allen, A Yacoby Physical review letters 105 (25), 256806, 2010 | 182 | 2010 |
| Organic transistors based on di (phenylvinyl) anthracene: Performance and stability H Klauk, U Zschieschang, RT Weitz, H Meng, F Sun, G Nunes, DE Keys, ... Advanced Materials 19 (22), 3882-3887, 2007 | 142 | 2007 |
| Bias stress effect in low-voltage organic thin-film transistors U Zschieschang, RT Weitz, K Kern, H Klauk Applied Physics A 95 (1), 139-145, 2009 | 129 | 2009 |
| High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayer RT Weitz, U Zschieschang, F Effenberger, H Klauk, M Burghard, K Kern Nano letters 7 (1), 22-27, 2007 | 123 | 2007 |
| Threshold-voltage shifts in organic transistors due to self-assembled monolayers at the dielectric: Evidence for electronic coupling and dipolar effects M Aghamohammadi, R Rödel, U Zschieschang, C Ocal, H Boschker, ... ACS applied materials & interfaces 7 (41), 22775-22785, 2015 | 94 | 2015 |
| Direct Uniaxial Alignment of a Donor–Acceptor Semiconducting Polymer Using Single-Step Solution Shearing L Shaw, P Hayoz, Y Diao, JA Reinspach, JWF To, MF Toney, RT Weitz, ... ACS applied materials & interfaces 8 (14), 9285-9296, 2016 | 90 | 2016 |
| Top-gate ZnO nanowire transistors and integrated circuits with ultrathin self-assembled monolayer gate dielectric D Kälblein, RT Weitz, HJ Böttcher, F Ante, U Zschieschang, K Kern, ... Nano letters 11 (12), 5309-5315, 2011 | 86 | 2011 |
| Chemical vapor deposition of high quality graphene films from carbon dioxide atmospheres AJ Strudwick, NE Weber, MG Schwab, M Kettner, RT Weitz, JR Wünsch, ... ACS nano 9 (1), 31-42, 2014 | 84 | 2014 |
| Vertical, electrolyte-gated organic transistors show continuous operation in the MA cm− 2 regime and artificial synaptic behaviour J Lenz, F del Giudice, FR Geisenhof, F Winterer, RT Weitz Nature nanotechnology 14 (6), 579-585, 2019 | 82 | 2019 |
| Graphene rests easy RT Weitz, A Yacoby Nature nanotechnology 5 (10), 699-700, 2010 | 72 | 2010 |
| Flexible low-voltage high-frequency organic thin-film transistors JW Borchert, U Zschieschang, F Letzkus, M Giorgio, RT Weitz, M Caironi, ... Science Advances 6 (21), eaaz5156, 2020 | 65 | 2020 |
Klaus KernMax-Planck-Institute for Solid State Research and Ecole Polytechnique Fédérale de LausanneVerified email at fkf.mpg.de
