Tony Schenk
Tony Schenk
Member of Technical Staff & Lead of Stack Development at Ferroelectric Memory Company
Bestätigte E-Mail-Adresse bei - Startseite
Zitiert von
Zitiert von
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
On the structural origins of ferroelectricity in HfO2 thin films
X Sang, ED Grimley, T Schenk, U Schroeder, JM LeBeau
Applied Physics Letters 106 (16), 2015
Stabilizing the ferroelectric phase in doped hafnium oxide
M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ...
Journal of Applied Physics 118 (7), 072006, 2015
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013
Impact of different dopants on the switching properties of ferroelectric hafniumoxide
U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ...
Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
D Zhou, J Xu, Q Li, Y Guan, F Cao, X Dong, J Müller, T Schenk, ...
Applied Physics Letters 103 (19), 2013
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films
ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ...
Advanced Electronic Materials 2 (9), 1600173, 2016
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ...
Nanoscale 9 (28), 9973-9986, 2017
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material
U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, ...
Inorganic chemistry 57 (5), 2752-2765, 2018
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants
MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ...
Journal of Materials Chemistry C 5 (19), 4677-4690, 2017
Complex internal bias fields in ferroelectric hafnium oxide
T Schenk, M Hoffmann, J Ocker, M Pešić, T Mikolajick, U Schroeder
ACS applied materials & interfaces 7 (36), 20224-20233, 2015
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ...
Applied Physics Letters 104 (9), 2014
About the deformation of ferroelectric hystereses
T Schenk, E Yurchuk, S Mueller, U Schroeder, S Starschich, U Böttger, ...
Applied Physics Reviews 1 (4), 041103, 2014
Electric field cycling behavior of ferroelectric hafnium oxide
T Schenk, U Schroeder, M Pešić, M Popovici, YV Pershin, T Mikolajick
ACS applied materials & interfaces 6 (22), 19744-19751, 2014
Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric
D Martin, J Müller, T Schenk, TM Arruda, A Kumar, E Strelcov, E Yurchuk, ...
Advanced Materials 26 (48), 8198-8202, 2014
Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films
S Starschich, T Schenk, U Schroeder, U Boettger
Applied Physics Letters 110 (18), 2017
Si doped hafnium oxide—A “fragile” ferroelectric system
C Richter, T Schenk, MH Park, FA Tscharntke, ED Grimley, JM LeBeau, ...
Advanced Electronic Materials 3 (10), 1700131, 2017
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2
ED Grimley, T Schenk, T Mikolajick, U Schroeder, JM LeBeau
Advanced Materials Interfaces 5 (5), 1701258, 2018
Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015
Domain pinning: Comparison of Hafnia and PZT based ferroelectrics
FPG Fengler, M Pešić, S Starschich, T Schneller, C Künneth, U Böttger, ...
Advanced Electronic Materials 3 (4), 1600505, 2017
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