Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ...
ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017
90 2017 Nanoscale inhomogeneity of the Schottky barrier and resistivity in multilayers F Giannazzo, G Fisichella, A Piazza, S Agnello, F Roccaforte
Physical Review B 92 (8), 081307, 2015
83 2015 Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale G Fisichella, G Greco, F Roccaforte, F Giannazzo
Nanoscale 6 (15), 8671-8680, 2014
79 2014 Microscopic mechanisms of graphene electrolytic delamination from metal substrates G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo
Applied Physics Letters 104 (23), 2014
63 2014 Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere A Piazza, F Giannazzo, G Buscarino, G Fisichella, AL Magna, ...
The Journal of Physical Chemistry C 119 (39), 22718-22723, 2015
54 2015 Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ...
Beilstein journal of nanotechnology 8 (1), 254-263, 2017
50 2017 Graphene integration with nitride semiconductors for high power and high frequency electronics F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, B Pecz, ...
physica status solidi (a) 214 (4), 1600460, 2017
48 2017 Interface Electrical Properties of Al2 O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ...
ACS applied materials & interfaces 9 (8), 7761-7771, 2017
45 2017 Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ...
Beilstein journal of nanotechnology 4 (1), 234-242, 2013
44 2013 From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure G Fisichella, G Greco, F Roccaforte, F Giannazzo
Applied Physics Letters 105 (6), 2014
32 2014 Effect of air on oxygen p‐doped graphene on SiO2 A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, ...
physica status solidi (a) 213 (9), 2341-2344, 2016
31 2016 Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ...
physica status solidi (RRL)–Rapid Research Letters 10 (11), 797-801, 2016
27 2016 High permittivity cerium oxide thin films on AlGaN/GaN heterostructures P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro
Applied Physics Letters 103 (11), 2013
23 2013 Advances in the fabrication of graphene transistors on flexible substrates G Fisichella, SL Verso, S Di Marco, V Vinciguerra, E Schilirò, S Di Franco, ...
Beilstein Journal of Nanotechnology 8 (1), 467-474, 2017
22 2017 High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001) F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, ...
Journal of crystal growth 393, 150-155, 2014
21 2014 Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy F Giannazzo, I Deretzis, G Nicotra, G Fisichella, C Spinella, F Roccaforte, ...
Applied surface science 291, 53-57, 2014
21 2014 A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method RA Puglisi, S Caccamo, L D'Urso, G Fisichella, F Giannazzo, M Italia, ...
physica status solidi (a) 212 (8), 1685-1694, 2015
20 2015 Substrate and atmosphere influence on oxygen p-doped graphene A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, ...
Carbon 107, 696-704, 2016
17 2016 Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors F Giannazzo, G Fisichella, G Greco, E Schilirò, I Deretzis, R Lo Nigro, ...
physica status solidi (a) 215 (10), 1700653, 2018
16 2018 Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy F Giannazzo, G Fisichella, A Piazza, S Di Franco, IP Oliveri, S Agnello, ...
Materials Science in Semiconductor Processing 42, 174-178, 2016
14 2016