| Heat-resistant composite material production method and production device T Nakamura, K Hotozuka, Y Fukushima, Y Shimogaki, T Momose, ... US Patent 10,167,549, 2019 | 293 | 2019 |
| Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate SF Chichibu, K Shima, K Kojima, S Takashima, M Edo, K Ueno, ... Applied Physics Letters 112 (21), 2018 | 60 | 2018 |
| Room-temperature photoluminescence lifetime for the near-band-edge emission of (0001¯) p-type GaN fabricated by sequential ion-implantation of Mg and H K Shima, H Iguchi, T Narita, K Kataoka, K Kojima, A Uedono, SF Chichibu Applied Physics Letters 113 (19), 2018 | 43 | 2018 |
| Annealing behavior of vacancy‐type defects in Mg‐and H‐implanted GaN studied using monoenergetic positron beams A Uedono, H Iguchi, T Narita, K Kataoka, W Egger, T Koschine, ... physica status solidi (b) 256 (10), 1900104, 2019 | 34 | 2019 |
| Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures SF Chichibu, K Shima, K Kojima, S Takashima, K Ueno, M Edo, H Iguchi, ... Japanese Journal of Applied Physics 58 (SC), SC0802, 2019 | 29 | 2019 |
| Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave D Tomida, Q Bao, M Saito, R Osanai, K Shima, K Kojima, T Ishiguro, ... Applied Physics Express 13 (5), 055505, 2020 | 25 | 2020 |
| Heat-resistant composite material production method and production device T Nakamura, M Ishizaki, K HOTOZUKA, Y Fukushima, Y Shimogaki, ... US Patent App. 10/221,104, 2019 | 24* | 2019 |
| Precursor-based designs of nano-structures and their processing for Co (W) alloy films as a single layered barrier/liner layer in future Cu-interconnect H Shimizu, K Shima, Y Suzuki, T Momose, Y Shimogaki Journal of Materials Chemistry C 3 (11), 2500-2510, 2015 | 18 | 2015 |
| Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam SI A. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, K. Kojima ... Scientific Reports 11, 20660-1-8, 2021 | 16 | 2021 |
| Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg SFC K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Kojima, A. Uedono ... Applied Physics Letters 119 (18), 182106, 2021 | 15 | 2021 |
| Low-pressure acidic ammonothermal growth of 2-inch-diameter nearly bowing-free bulk GaN crystals K Kurimoto, Q Bao, Y Mikawa, K Shima, T Ishiguro, SF Chichibu Applied Physics Express 15, 055504-1-4, 2022 | 14 | 2022 |
| Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature M Takahashi, A Tanaka, Y Ando, H Watanabe, M Deki, M Kushimoto, ... physica status solidi (b) 257 (4), 1900554, 2020 | 14 | 2020 |
| Study on the adhesion strength of CVD-Cu films with ALD-Co (W) underlayers made using amidinato precursors K Shima, H Shimizu, T Momose, Y Shimogaki ECS Journal of Solid State Science and Technology 4 (2), P20, 2014 | 12 | 2014 |
| Self-Assembled Nano-Stuffing Structure in CVD and ALD Co (W) Films as a Single-Layered Barrier/Liner for Future Cu-Interconnects H Shimizu, A Kumamoto, K Shima, Y Kobayashi, T Momose, T Nogami, ... ECS Journal of Solid State Science and Technology 2 (11), P471, 2013 | 12 | 2013 |
| Role of W and Mn for reliable 1X nanometer-node ultra-large-scale integration Cu interconnects proved by atom probe tomography K Shima, Y Tu, H Takamizawa, H Shimizu, Y Shimizu, T Momose, K Inoue, ... Applied Physics Letters 105 (13), 2014 | 11 | 2014 |
| Self-formed compositional superlattices triggered by cation orderings in m-plane Al1−xInxN on GaN SF Chichibu, K Shima, K Kojima, Y Kangawa Scientific reports 10 (1), 18570, 2020 | 9 | 2020 |
| Impact of high-temperature implantation of Mg ions into GaN M Takahashi, A Tanaka, Y Ando, H Watanabe, M Deki, M Kushimoto, ... Japanese Journal of Applied Physics 59 (5), 056502, 2020 | 8 | 2020 |
| Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels K Shima, N Sato, Y Funato, Y Fukushima, T Momose, Y Shimogaki Japanese Journal of Applied Physics 56 (6S2), 06HE02, 2017 | 8 | 2017 |
| High‐Aspect‐Ratio Parallel‐Plate Microchannels Applicable to Kinetic Analysis of Chemical Vapor Deposition K Shima, Y Funato, H Sugiura, N Sato, Y Fukushima, T Momose, ... Advanced Materials Interfaces 3 (16), 1600254, 2016 | 8 | 2016 |
| Conformal and stoichiometric chemical vapor deposition of silicon carbide onto ultradeep heterogeneous micropores by controlling the initial nucleation stage K Shima, Y Otaka, N Sato, Y Funato, Y Fukushima, T Momose, ... ACS applied materials & interfaces 13 (44), 53009-53020, 2021 | 7 | 2021 |
Yukihiro ShimogakiProfessor of Materials Engineering, The University of TokyoBestätigte E-Mail-Adresse bei dpe.mm.t.u-tokyo.ac.jp
