| Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates E Reato, P Palacios, B Uzlu, M Saeed, A Grundmann, Z Wang, ... Advanced Materials 34 (48), 2108469, 2022 | 18 | 2022 |
| Dielectric surface charge engineering for electrostatic doping of graphene S Wittmann, F Aumer, D Wittmann, S Pindl, S Wagner, A Gahoi, E Reato, ... ACS Applied Electronic Materials 2 (5), 1235-1242, 2020 | 16 | 2020 |
| Button shear testing for adhesion measurements of 2D materials J Schätz, N Nayi, J Weber, C Metzke, S Lukas, J Walter, T Schaffus, ... Nature Communications 15 (1), 1-11, 2024 | 2 | 2024 |
| MoS2/graphene Lateral Heterostructure Field Effect Transistors DS Schneider, E Reato, L Lucchesi, Z Wang, A Piacetini, J Bolten, ... 2021 Device Research Conference (DRC), 1-2, 2021 | 1 | 2021 |
| Hysteresis analysis of MoS2 field effect transistors A Toral-Lopez, DS Schneider, E Reato, EG Marin, F Pasadas, Z Wang, ... 2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021 | 1 | 2021 |
| CVD graphene-MoS2 Van der Waals heterostructures on the millimeter-scale N Rademacher, E Reato, L Völkel, A Grundmann, M Heuken, H Kalisch, ... Micro and Nano Engineering, 100256, 2024 | | 2024 |
| Fully Integrated Flexible RF Detectors in MoS2 and Graphene based MMIC P Palacios, E Reato, M Saeed, F Pasadas, Z Wang, MC Lemme, R Negra 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
| CVD Graphene Contacts for Lateral Heterostructure MoS Field Effect Transistors DS Schneider, L Lucchesi, E Reato, Z Wang, A Piacentini, J Bolten, ... arXiv preprint arXiv:2304.01177, 2023 | | 2023 |
| Multi Parameter Admittance Spectroscopy of MOSFETs with 2D MoS2 Channels E Reato, O Engström, Z Wang, A Grundmann, M Heuken, H Kalisch, ... 2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021 | | 2021 |
| (Invited) Transistors, Memristors and Optoelectronics Based on Two-Dimensional Molybdenum Disulfide M Belete, D Schneider, E Reato, O Engström, Z Wang, T Wahlbrink, ... Electrochemical Society Meeting Abstracts 237, 1297-1297, 2020 | | 2020 |
