| A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor K Aumaille, C Vallée, A Granier, A Goullet, F Gaboriau, G Turban Thin Solid Films 359 (2), 188-196, 2000 | 184 | 2000 |
| Diagnostics in helicon plasmas for deposition A Granier, F Nicolazo, C Vallée, A Goullet, G Turban, B Grolleau Plasma Sources Science and Technology 6 (2), 147, 1997 | 112 | 1997 |
| Inorganic to organic crossover in thin films deposited from O2/TEOS plasmas C Vallée, A Goullet, A Granier, A van Der Lee, J Durand, C Marliere Journal of non-crystalline solids 272 (2-3), 163-173, 2000 | 84 | 2000 |
| Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect A Rouahi, A Kahouli, F Challali, MP Besland, C Vallée, B Yangui, ... Journal of Physics D: Applied Physics 46 (6), 065308, 2013 | 80 | 2013 |
| Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor C Charles, G Giroult‐Matlakowski, RW Boswell, A Goullet, G Turban, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (6 …, 1993 | 80 | 1993 |
| Optical spectroscopic analyses of OH incorporation into films deposited from /tetraethoxysilane plasmas A Goullet, C Vallee, A Granier, G Turban Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (5 …, 2000 | 71 | 2000 |
| Silicon dioxide deposition in a microwave plasma reactor N Benissad, C Boisse-Laporte, C Vallée, A Granier, A Goullet Surface and Coatings Technology 116, 868-873, 1999 | 68 | 1999 |
| Optical characterization of hydrogenated amorphous carbon (aC: H) thin films deposited from methane plasma J Hong, A Goullet, G Turban Thin Solid Films 364 (1-2), 144-149, 2000 | 50 | 2000 |
| Ellipsometry and Raman study on hydrogenated amorphous carbon (aC: H) films deposited in a dual ECR-rf plasma J Hong, A Goullet, G Turban Thin solid films 352 (1-2), 41-48, 1999 | 50 | 1999 |
| Nitrogen doping on NiO by reactive magnetron sputtering: a new pathway to dynamically tune the optical and electrical properties J Keraudy, A Ferrec, M Richard-Plouet, J Hamon, A Goullet, PY Jouan Applied Surface Science 409, 77-84, 2017 | 44 | 2017 |
| In situ spectroscopic ellipsometry study of TiO2 films deposited by plasma enhanced chemical vapour deposition D Li, M Carette, A Granier, JP Landesman, A Goullet Applied Surface Science 283, 234-239, 2013 | 44 | 2013 |
| Quantitative infrared analysis of the stretching peak of SiO2 films deposited from tetraethoxysilane plasmas A Goullet, C Charles, P Garcia, G Turban Journal of applied physics 74 (11), 6876-6882, 1993 | 42 | 1993 |
| Structural, morphological and electrical properties of nickel oxide thin films deposited by reactive sputtering J Keraudy, JG Molleja, A Ferrec, B Corraze, M Richard-Plouet, A Goullet, ... Applied surface science 357, 838-844, 2015 | 41 | 2015 |
| Analysis of low-k organosilicon and low-density silica films deposited in HMDSO plasmas G Borvon, A Goullet, A Granier, G Turban Plasmas and polymers 7 (4), 341-352, 2002 | 39 | 2002 |
| Carbon nanotubes and nanostructures grown from diamond-like carbon and polyethylene D Sarangi, C Godon, A Granier, R Moalic, A Goullet, G Turban, O Chauvet Applied Physics A 73, 765-768, 2001 | 39 | 2001 |
| In situ ellipsometry and infrared analysis of PECVD SiO2 films deposited in an O2/TEOS helicon reactor C Vallée, A Goullet, F Nicolazo, A Granier, G Turban Journal of non-crystalline solids 216, 48-54, 1997 | 39 | 1997 |
| Structure and properties of silicon oxide films deposited in a dual microwave-rf plasma reactor N Benissad, K Aumaille, A Granier, A Goullet Thin Solid Films 384 (2), 230-235, 2001 | 38 | 2001 |
| Nanostructure and photocatalytic properties of TiO2 films deposited at low temperature by pulsed PECVD D Li, S Bulou, N Gautier, S Elisabeth, A Goullet, M Richard-Plouet, ... Applied surface science 466, 63-69, 2019 | 37 | 2019 |
| Electrical properties of low-dielectric-constant films prepared by PECVD in O2/CH4/HMDSO G Borvon, A Goullet, X Mellhaoui, N Charrouf, A Granier Materials Science in Semiconductor Processing 5 (2-3), 279-284, 2002 | 37 | 2002 |
| Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces EA Alam, I Cortes, MP Besland, A Goullet, L Lajaunie, P Regreny, ... Journal of Applied Physics 109 (8), 2011 | 36 | 2011 |
