| Microstructural origin of leakage current in GaN/InGaN light-emitting diodes XA Cao, JA Teetsov, F Shahedipour-Sandvik, SD Arthur Journal of crystal growth 264 (1-3), 172-177, 2004 | 157 | 2004 |
| Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer Journal of Applied Physics 87 (7), 3351-3354, 2000 | 146 | 2000 |
| Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg F Shahedipour, BW Wessels Applied Physics Letters 76 (21), 3011-3013, 2000 | 145 | 2000 |
| AlxGa1− xN for solar-blind UV detectors P Sandvik, K Mi, F Shahedipour, R McClintock, A Yasan, P Kung, ... Journal of crystal growth 231 (3), 366-370, 2001 | 136 | 2001 |
| Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes V Jindal, F Shahedipour-Sandvik Journal of Applied Physics 106 (8), 2009 | 122 | 2009 |
| Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN V Jindal, F Shahedipour-Sandvik Journal of Applied Physics 105 (8), 2009 | 105 | 2009 |
| Efficient GaN photocathodes for low-level ultraviolet signal detection FS Shahedipour, MP Ulmer, BW Wessels, CL Joseph, T Nihashi IEEE Journal of Quantum Electronics 38 (4), 333-335, 2002 | 76 | 2002 |
| AlGaN devices and growth of device structures KA Jones, TP Chow, M Wraback, M Shatalov, Z Sitar, F Shahedipour, ... Journal of Materials Science 50, 3267-3307, 2015 | 66 | 2015 |
| Development of strain reduced GaN on Si (111) by substrate engineering M Jamil, JR Grandusky, V Jindal, F Shahedipour-Sandvik, S Guha, M Arif Applied Physics Letters 87 (8), 2005 | 66 | 2005 |
| Single photon counting UV solar-blind detectors using silicon and III-nitride materials S Nikzad, M Hoenk, AD Jewell, JJ Hennessy, AG Carver, TJ Jones, ... Sensors 16 (6), 927, 2016 | 54 | 2016 |
| A Tersoff‐based interatomic potential for wurtzite AlN M Tungare, Y Shi, N Tripathi, P Suvarna, F Shahedipour‐Sandvik physica status solidi (a) 208 (7), 1569-1572, 2011 | 51 | 2011 |
| Deep acceptors in undoped GaN MA Reshchikov, F Shahedipour, RY Korotkov, MP Ulmer, BW Wessels Physica B: Condensed Matter 273, 105-108, 1999 | 46 | 1999 |
| Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes X Cao, K Topol, F Shahedipour-Sandvik, J Teetsov, PM Sandvik, ... Solid State Lighting II 4776, 105-113, 2002 | 40 | 2002 |
| Mechanism of large area dislocation defect reduction in GaN layers on AlN∕ Si (111) by substrate engineering M Jamil, JR Grandusky, V Jindal, N Tripathi, F Shahedipour-Sandvik Journal of Applied Physics 102 (2), 2007 | 39 | 2007 |
| Design and characterization of GaN pin diodes for betavoltaic devices MR Khan, JR Smith, RP Tompkins, S Kelley, M Litz, J Russo, ... Solid-State Electronics 136, 24-29, 2017 | 38 | 2017 |
| Progress in the fabrication of GaN photocathodes MP Ulmer, BW Wessels, F Shahedipour, RY Korotokov, CL Joseph, ... Photodetectors: Materials and Devices VI 4288, 246-253, 2001 | 37 | 2001 |
| Direct immobilization and hybridization of DNA on group III nitride semiconductors X Xu, V Jindal, F Shahedipour-Sandvik, M Bergkvist, NC Cady Applied Surface Science 255 (11), 5905-5909, 2009 | 35 | 2009 |
| Computational and experimental studies on the growth of nonpolar surfaces of gallium nitride V Jindal, F Shahedipour-Sandvik Journal of Applied Physics 107 (5), 2010 | 34 | 2010 |
| Development of native, single crystal AlN substrates for device applications LJ Schowalter, SB Schujman, W Liu, M Goorsky, MC Wood, J Grandusky, ... physica status solidi (a) 203 (7), 1667-1671, 2006 | 31 | 2006 |
| Nanocrystalline gold and gold–palladium as effective catalysts for selective oxidation J Edwards, P Landon, AF Carley, AA Herzing, M Watanabe, CJ Kiely, ... Journal of materials research 22 (4), 831-837, 2007 | 29 | 2007 |
Vibhu JindalApplied MaterialsVerified email at amat.com
