khalid hoummada
khalid hoummada
Aix Marseille University
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Zitiert von
Zitiert von
Impact of directional walk on atom probe microanalysis
B Gault, F Danoix, K Hoummada, D Mangelinck, H Leitner
Ultramicroscopy 113, 182-191, 2012
Snowplow effect and reactive diffusion in the Pt doped Ni–Si system
O Cojocaru-Mirédin, D Mangelinck, K Hoummada, E Cadel, D Blavette, ...
Scripta materialia 57 (5), 373-376, 2007
Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si
D Mangelinck, K Hoummada, A Portavoce, C Perrin, R Daineche, ...
Scripta Materialia 62 (8), 568-571, 2010
First stages of the formation of Ni silicide by atom probe tomography
K Hoummada, E Cadel, D Mangelinck, C Perrin-Pellegrino, D Blavette, ...
Applied Physics Letters 89 (18), 181905, 2006
Effect of Pt addition on Ni silicide formation at low temperature: Growth, redistribution, and solubility
K Hoummada, C Perrin-Pellegrino, D Mangelinck
Journal of Applied Physics 106 (6), 063511, 2009
Nickel segregation on dislocation loops in implanted silicon
K Hoummada, D Mangelinck, B Gault, M Cabié
Scripta Materialia 64 (5), 378-381, 2011
Kinetics of a transient silicide during the reaction of Ni thin film with (100) Si
D Mangelinck, K Hoummada, I Blum
Applied Physics Letters 95 (18), 181902, 2009
Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor
F Panciera, K Hoummada, M Gregoire, M Juhel, N Bicais, D Mangelinck
Applied Physics Letters 99 (5), 051911, 2011
Composition measurement of the Ni-silicide transient phase by atom probe tomography
K Hoummada, I Blum, D Mangelinck, A Portavoce
Applied Physics Letters 96 (26), 261904, 2010
Effect of stress on the transformation of into NiSi
D Mangelinck, K Hoummada
Applied Physics Letters 92 (25), 254101, 2008
Atom probe tomography for advanced metallization
D Mangelinck, F Panciera, K Hoummada, M El Kousseifi, C Perrin, ...
Microelectronic engineering 120, 19-33, 2014
Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis
F Panciera, K Hoummada, M Gregoire, M Juhel, F Lorut, N Bicais, ...
Microelectronic engineering 107, 167-172, 2013
Progress in the understanding of Ni silicide formation for advanced MOS structures
D Mangelinck, K Hoummada, F Panciera, M El Kousseifi, I Blum, ...
physica status solidi (a) 211 (1), 152-165, 2014
Differential scanning calorimetry measurements of kinetic factors involved in salicide process
K Hoummada, A Portavoce, C Perrin-Pellegrino, D Mangelinck, ...
Applied Physics Letters 92 (13), 133109, 2008
Effect of external stress on the Fe–Cr phase separation in 15-5 PH and Fe–15Cr–5Ni alloys
F Danoix, J Lacaze, A Gibert, D Mangelinck, K Hoummada, E Andrieu
Ultramicroscopy 132, 193-198, 2013
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold
F Panciera, S Baudot, K Hoummada, M Gregoire, M Juhel, D Mangelinck
Applied Physics Letters 100 (20), 201909, 2012
Static and dynamical ageing processes at room temperature in a Fe25Ni0. 4C virgin martensite: effect of C redistribution at the nanoscale
S Allain, F Danoix, M Goune, K Hoummada, D Mangelinck
Philosophical magazine letters 93 (2), 68-76, 2013
Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate
F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ...
Scripta Materialia 78, 9-12, 2014
Atom probe tomographic study of L10 martensite in a Pt-modified NiCoCrAlYTa bond coating
X Tan, C Perrin-Pellegrino, K Hoummada, D Mangelinck, ARV Put, ...
Corrosion science 76, 1-5, 2013
Lattice and grain-boundary diffusion of As in
I Blum, A Portavoce, D Mangelinck, R Daineche, K Hoummada, JL Lábár, ...
Journal of Applied Physics 104 (11), 114312, 2008
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