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Amir Khodabakhsh
Amir Khodabakhsh
Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran
Bestätigte E-Mail-Adresse bei wtiau.ac.ir
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Zitiert von
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High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters
M Fallahnejad, A Amini, A Khodabakhsh, M Vadizadeh
Applied Physics A 128 (1), 47, 2022
52022
Low-noise Si/Si0.5Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications
M Fallahnejad, A Khodabakhsh, A Amini, M Vadizadeh
Applied Physics A 129 (5), 336, 2023
22023
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
A Khodabakhsh, M Fallahnejad, M Vadizadeh
Microelectronics Reliability 152, 115278, 2024
2024
Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications
A Khodabakhsh, A Amini, M Fallahnejad
IEEE Transactions on Nanotechnology, 2023
2023
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