Giorgos Fagas

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	All	Since 2016
Citations	2246	716
h-index	23	14
i10-index	43	24

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Co-authors

James C. GreerLi Dak Sum Chair in Electronic Materials & Devices, University of Nottingham, Ningbo, China campusVerified email at nottingham.edu.cn
Gianaurelio CunibertiTU Dresden; https://ORCID.org/0000-0002-6574-7848Verified email at tu-dresden.de
Michael NolanTyndall National Institute, University College Cork, IrelandVerified email at tyndall.ie
Rafael GutierrezTU DresdenVerified email at nano.tu-dresden.de
Pedram RazaviVerified email at tyndall.ie
Frank GrossmannInstitut für Theoretische Physik, Technische Universität Dresden, Dresden, GermanyVerified email at physik.tu-dresden.de
Colin J. LambertResearch Professor, Lancaster UniversityVerified email at lancaster.ac.uk
Isabelle FerainGlobalfoundriesVerified email at globalfoundries.com
Hadi H. ArefiFunctional Nanostructures at Surfaces (PGI-3), Peter Grünberg InstituteVerified email at fz-juelich.de
Aryan AfzalianUniversité catholique de LouvainVerified email at uclouvain.be
Ran Yan (Ruby)GLOBALFOUNDRIESVerified email at globalfoundries.com
ND AkhavanThe University of Western AustraliaVerified email at uwa.edu.au
Douglas J PaulRoyal Academy of Engineering Chair in Emerging Technologies, University of GlasgowVerified email at glasgow.ac.uk
Luca GammaitoniNiPS laboratory, Dipartimento di Fisica, Università di PerugiaVerified email at nipslab.org
Thomas FrauenheimProfessor für Computational Materials ScienceVerified email at bccms.uni-bremen.de
Sean O'CallaghanBioinformatican, Nuritas Ltd.Verified email at nuritas.com
A.M. IonescuProfessor of NanoelectronicsVerified email at epfl.ch
A.N.NazarovInstitute of Semiconductor Physics NASUVerified email at lab15.kiev.ua
Sylvain BARRAUDCEA-LETI, Minatec CampusVerified email at cea.fr
Elizabeth BuitragoABB semiconductorVerified email at ch.abb.com

Giorgos Fagas

Tyndall National Institute

Verified email at tyndall.ie

electronic transport nanowires molecular electronics disordered systems device simulations


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Introducing molecular electronics G.(Gianaurelio) Cuniberti, G.(Giorgos) Fagas, K Richter Springer, 2005	502*	2005
Silicon nanowire band gap modification M Nolan, S O'Callaghan, G Fagas, JC Greer, T Frauenheim Nano letters 7 (1), 34-38, 2007	255	2007
Theory of an all-carbon molecular switch R Gutiérrez, G Fagas, G Cuniberti, F Grossmann, R Schmidt, K Richter Physical Review B 65 (11), 113410, 2002	125	2002
Simulation of junctionless Si nanowire transistors with 3 nm gate length L Ansari, B Feldman, G Fagas, JP Colinge, JC Greer Applied Physics Letters 97 (6), 062105, 2010	104	2010
Fingerprints of mesoscopic leads in the conductance of a molecular wire G Cuniberti, G Fagas, K Richter Chemical physics 281 (2-3), 465-476, 2002	65	2002
Deformation potentials and electron− phonon coupling in silicon nanowires F Murphy-Armando, G Fagas, JC Greer Nano letters 10 (3), 869-873, 2010	64	2010
Lattice dynamics of a disordered solid-solid interface G Fagas, AG Kozorezov, CJ Lambert, JK Wigmore, A Peacock, A Poelaert, ... Physical review b 60 (9), 6459, 1999	62	1999
Phonon-mediated thermal conductance of mesoscopic wires with rough edges A Kambili, G Fagas, VI Fal’ko, CJ Lambert Physical review b 60 (23), 15593, 1999	59	1999
Geometrical enhancement of the proximity effect in quantum wires with extended superconducting tunnel contacts G Fagas, G Tkachov, A Pfund, K Richter Physical Review B 71 (22), 224510, 2005	54	2005
A proposed confinement modulated gap nanowire transistor based on a metal (tin) L Ansari, G Fagas, JP Colinge, JC Greer Nano letters 12 (5), 2222-2227, 2012	51	2012
Electron transport in nanotube–molecular-wire hybrids G Fagas, G Cuniberti, K Richter Physical Review B 63 (4), 045416, 2001	51	2001
Ballistic conductance in oxidized Si nanowires G Fagas, JC Greer Nano letters 9 (5), 1856-1860, 2009	48	2009
Tunnelling in alkanes anchored to gold electrodes via amine end groups G Fagas, JC Greer Nanotechnology 18 (42), 424010, 2007	47	2007
Tunnel currents across silane diamines/dithiols and alkane diamines/dithiols: A comparative computational study S McDermott, CB George, G Fagas, JC Greer, MA Ratner The Journal of Physical Chemistry C 113 (2), 744-750, 2009	42	2009
Independent particle descriptions of tunneling using the many-body quantum transport approach G Fagas, P Delaney, JC Greer Physical Review B 73 (24), 241314, 2006	40	2006
Complex-band structure: a method to determine the off-resonant electron transport in oligomers G Fagas, A Kambili, M Elstner Chemical physics letters 389 (4-6), 268-273, 2004	39	2004
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu Sensors and Actuators B: Chemical 183, 1-10, 2013	35	2013
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas Microelectronic Engineering 109, 326-329, 2013	34	2013
Chemical trends in the work function of modified Si (111) surfaces: A DFT study HH Arefi, G Fagas The Journal of Physical Chemistry C 118 (26), 14346-14354, 2014	33	2014
Conductance of a molecular junction mediated by unconventional metal-induced gap states R Gutiérrez, G Fagas, K Richter, F Grossmann, R Schmidt EPL (Europhysics Letters) 62 (1), 90, 2003	30	2003

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