Folgen
Sayantani Sen
Titel
Zitiert von
Zitiert von
Jahr
Mg and Al co-doping of ZnO thin films: effect on ultraviolet photoconductivity
A Das, PG Roy, A Dutta, S Sen, P Pramanik, D Das, A Banerjee, ...
Materials Science in Semiconductor Processing 54, 36-41, 2016
392016
Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors
P Pramanik, S Sen, C Singha, AS Roy, A Das, S Sen, A Bhattacharyya
Journal of Applied Physics 120 (14), 2016
242016
Controlling the compositional inhomogeneities in AlxGa1− xN/AlyGa1− yN MQWs grown by PA-MBE: Effect on luminescence properties
P Pramanik, S Sen, C Singha, AS Roy, A Das, S Sen, A Bhattacharyya, ...
Journal of Crystal Growth 439, 60-65, 2016
202016
GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency
C Singha, S Sen, A Das, A Saha, P Pramanik, S Bera, R Mukhopadhyay, ...
Thin Solid Films 709, 138216, 2020
82020
Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures
P Pramanik, S Sen, C Singha, A Bhattacharyya, L Zhou, DJ Smith
AIP Advances 11 (8), 2021
62021
Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods
C Singha, S Sen, P Pramanik, M Palit, A Das, AS Roy, S Sen, ...
Journal of Crystal Growth 481, 40-47, 2018
62018
Anomalous red emission with competition and coexistence of defect and band edge emission in photo-electrochemically active (Zn0.97Ga0.03)(O0.95N0.05) solid solution
SS Sumithra Sivadas Menon, Sayantani Sen, Pallabi Pramanik, Anirban ...
RSC Advances, 2016
62016
Mg and Al doped ZnO thin film: Photoinduced “oxygen breathing” under UV illumination
A Das, PG Roy, S Sen, A Bhattacharyya
Thin Solid Films 662, 54-59, 2018
52018
Wavelength-specific ultraviolet photodetectors based on AlGaN multiple quantum wells
P Pramanik, S Sen, C Singha, AS Roy, A Das, S Sen, DVS Rao, ...
IEEE Journal of Quantum Electronics 52 (3), 1-6, 2016
52016
Monitoring the growth of III-nitride materials by plasma assisted molecular beam epitaxy employing diffuse scattering of RHEED
S Sen, S Paul, C Singha, A Saha, A Das, P Guha Roy, P Pramanik, ...
Journal of Vacuum Science & Technology B 38 (1), 2020
42020
AlGaN multiple quantum wells by PA-MBE for deep UV emission: Effect of growth interruptions
S Sen, C Singha, A Saha, A Das, PG Roy, P Pramanik, A Bhattacharyya
Journal of Crystal Growth 523, 125159, 2019
42019
Bioelectronics at graphene–biofilm interface: Schottky junction formation and capacitive transitions
S Ray, S Sen, A Das, A Bose, A Bhattacharyya, A Das, S Chattopadhyay, ...
Medical Devices & Sensors 1 (3), e10013, 2018
32018
VLS-grown diffusion doped ZnO nanowires and their luminescence properties
PG Roy, A Dutta, A Das, S Sen, P Pramanik, A Bhattacharyya
Materials Research Express 2 (7), 075007, 2015
22015
Spontaneous growth of III-nitride 1D and 0D nanostructures on to vertical nanorod arrays
C Singha, S Sen, A Das, A Saha, S Sikdar, P Pramanik, A Bhattacharyya
Materials Research Express 6 (10), 1050b2, 2019
12019
Wavelength-switchable ultraviolet light-emitting diodes
PG Roy, S Sen, A Bhattacharyya
Optics Letters 48 (11), 3099-3102, 2023
2023
Compositional Inhomogeneity in AlGaN Multiple Quantum Wells Grown by Molecular Beam Epitaxy: Effect on Ultraviolet Light-Emitting Diodes
S Sen, P Guha Roy, C Singha, A Saha, A Das, P Pramanik, S Sen, ...
Journal of Electronic Materials 50, 3447-3454, 2021
2021
A simple method to overcome the limitation of hybrid monochromator in the identification of peaks in the HRXRD pattern of Al0. 4Ga0. 6N/Al0. 6Ga0. 4N multi quantum wells
TK Sharma, R Kumar, AK Sinha, P Pramanik, S Sen, A Bhattacharyya
Materials Science and Engineering: B 240, 92-96, 2019
2019
Correction: Anomalous red emission with competition and coexistence of defect and band edge emission in photo-electrochemically active (Zn 0.97 Ga 0.03)(O 0.95 N 0.05) solid …
SS Menon, S Sen, P Pramanik, A Bhattacharyya, B Gupta, B Tiwari, ...
RSC advances 6 (109), 107708-107708, 2016
2016
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–18