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Andrew J. Green
Andrew J. Green
Bestätigte E-Mail-Adresse bei us.af.mil
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Zitiert von
Zitiert von
Jahr
3.8 MV/cm Breakdown Strength of MOVPE-Grown Sn-doped β-Ga2O3 MOSFETs
AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters, 2016
5892016
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 2016
3742016
β-Ga2O3 MOSFETs for Radio Frequency Operation
AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
3022017
β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
Apl Materials 10 (2), 2022
2352022
Recessed-Gate Enhancement-Mode β-Ga2O3 MOSFETs
KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron Device Letters 39 (1), 67-70, 2018
2222018
Ge-Doped β-Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
1972017
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 2017
1792017
Superheating Water by CW Excitation of Gold Nanodots
MT Carlson, AJ Green, HH Richardson
Nano Letters, 1534-1537, 2012
1522012
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
1232019
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ...
Applied Physics Letters 110 (14), 2017
902017
Increasing efficiency, speed, and responsivity of vanadium dioxide based photothermally driven actuators using single-wall carbon nanotube thin-films
T Wang, D Torres, FE Fernández, AJ Green, C Wang, N Sepúlveda
ACS nano 9 (4), 4371-4378, 2015
802015
ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance
AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ...
IEEE Electron Device Letters 40 (7), 1056-1059, 2019
772019
Comparison of Vapor Formation of Water at the Solid/Water Interface to Colloidal Solutions Using Optically Excited Gold Nanostructures
S Baral, A Green, MY Livshits, AO Govorov, HH Richardson
ACS Nano 8 (2), pp 1439-1448, 2014
712014
Implementation of High Power Density X-Band AlGaN/GaN High Electron Mobility Transistors (HEMTs) in a Millimeter-Wave Monolithic Microwave Integrated Circuit (MMIC) Process
R Fitch, D Walker, A Green, S Tetlak, J Gillespie, R Gilbert, K Sutherlin, ...
IEEE, 2015
68*2015
RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band
AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
502020
Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates
KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ...
Applied Physics Express 12 (12), 126501, 2019
462019
Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition
KD Leedy, KD Chabak, V Vasilyev, DC Look, K Mahalingam, JL Brown, ...
APL Materials 6 (10), 2018
452018
Sub-micron gallium oxide radio frequency field-effect transistors
KD Chabak, DE Walker, AJ Green, A Crespo, M Lindquist, K Leedy, ...
2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018
432018
Photonic jets for highly efficient mid-IR focal plane arrays with large angle‐of‐view
F Abolmaali, A Brettin, A Green, NI Limberopoulos, AM Urbas, ...
Optics express 25 (25), 31174-31185, 2017
412017
Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire
JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ...
Applied Physics Letters 119 (6), 2021
382021
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