Performance limits of monolayer transition metal dichalcogenide transistors L Liu, S Bala Kumar, Y Ouyang, J Guo IEEE Transactions on Electron Devices 58 (9), 3042-3047, 2011 | 594 | 2011 |
Quantum confinement effects in nanoscale-thickness InAs membranes K Takei, H Fang, S Bala Kumar, R Kapadia, Q Gao, M Madsen, HS Kim, ... Nano letters 11 (11), 5008-5012, 2011 | 120 | 2011 |
Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires AC Ford, S Bala Kumar, R Kapadia, J Guo, A Javey Nano Lett. 12 (3), 1340–1343, 2012 | 98 | 2012 |
Multilayer graphene under vertical electric field S Bala Kumar, J Guo Applied Physics Letters 98 (22), 222101, 2011 | 86 | 2011 |
A simulation study of graphene-nanoribbon tunneling FET with heterojunction channel KT Lam, D Seah, SK Chin, S Bala Kumar, G Samudra, YC Yeo, G Liang IEEE Electron Device Letters 31 (6), 555-557, 2010 | 80 | 2010 |
Strain-Induced Conductance Modulation in Graphene Grain Boundary S Bala Kumar, J Guo Nano Lett. 12 (3), 1362–1366, 2012 | 66 | 2012 |
Modeling of a vertical tunneling graphene heterojunction field-effect transistor S Bala Kumar, G Seol, J Guo Applied Physics Letters 101 (3), 033503, 2012 | 52 | 2012 |
Quantum size effects on the chemical sensing performance of two-dimensional semiconductors J Nah, SB Kumar, H Fang, YZ Chen, E Plis, YL Chueh, S Krishna, J Guo, ... J. Phys. Chem. C 116 (17), 9750–9754, 2012 | 46 | 2012 |
Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation S Bala Kumar, MBA Jalil, SG Tan, G Liang Journal of Applied Physics 108 (3), 033709, 2010 | 33 | 2010 |
Chiral tunneling in trilayer graphene S Bala Kumar, J Guo Applied Physics Letters 100 (16), 163102, 2012 | 32 | 2012 |
The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons S Bala Kumar, MBA Jalil, SG Tan, G Liang Journal of Physics: Condensed Matter 22 (37), 375303, 2010 | 24 | 2010 |
Spin drift diffusion studies of magnetoresistance effects in current-perpendicular-to-plane spin valves with half-metallic insertions MBA Jalil, SG Tan, SB Kumar, S Bae Physical Review B 73 (13), 134417, 2006 | 20 | 2006 |
Layer thickness effect on the magnetoresistance of a current-perpendicular-to-plane spin valve SG Tan, MBA Jalil, S Bala Kumar, GC Han, YK Zheng Journal of applied physics 100 (6), 063703, 2006 | 19 | 2006 |
Utilization of magnetoelectric potential in ballistic nanodevices SG Tan, MBA Jalil, S Bala Kumar, KL Teo, T Liew Journal of applied physics 99 (8), 084305, 2006 | 19 | 2006 |
Klein tunneling in graphene systems under the influence of magnetic field S Bala Kumar, MBA Jalil, SG Tan Journal of Applied Physics 114 (8), 084314, 2013 | 15 | 2013 |
Multilayer graphene nanoribbon under vertical electric field S Bala Kumar, J Guo Journal of Applied Physics 110 (4), 044309, 2011 | 15 | 2011 |
A study of spin relaxation on spin transfer switching of a noncollinear magnetic multilayer structure NL Chung, MBA Jalil, SG Tan, J Guo, SB Kumar Journal of Applied Physics 104 (8), 084502, 2008 | 15 | 2008 |
Spin tunneling in multilayer spintronic devices SG Tan, MBA Jalil, SB Kumar, GC Liang Physical Review B 77 (8), 085424, 2008 | 15 | 2008 |
High magnetoresistance in graphene nanoribbon heterojunction S Bala Kumar, MBA Jalil, SG Tan Applied Physics Letters 101 (18), 183111, 2012 | 14 | 2012 |
Modelling very large magnetoresistance of graphene nanoribbon devices S Bala Kumar, J Guo Nanoscale 4 (3), 982-985, 2012 | 13 | 2012 |