Renrong Liang
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Epidermis microstructure inspired graphene pressure sensor with random distributed spinosum for high sensitivity and large linearity
Y Pang, K Zhang, Z Yang, S Jiang, Z Ju, Y Li, X Wang, D Wang, M Jian, ...
ACS nano 12 (3), 2346-2354, 2018
Multilayer graphene epidermal electronic skin
Y Qiao, Y Wang, H Tian, M Li, J Jian, Y Wei, Y Tian, DY Wang, Y Pang, ...
ACS nano 12 (9), 8839-8846, 2018
Heteromaterial gate tunnel field effect transistor with lateral energy band profile modulation
N Cui, R Liang, J Xu
Applied Physics Letters 98 (14), 142105, 2011
Application of plasmonic silver island films in thin-film silicon solar cells
R Santbergen, TL Temple, R Liang, AHM Smets, R Van Swaaij, M Zeman
Journal of Optics 14 (2), 024010, 2012
Wafer-Scale High-Throughput Ordered Arrays of Si and Coaxial Si/Si1–xGex Wires: Fabrication, Characterization, and Photovoltaic Application
C Pan, Z Luo, C Xu, J Luo, R Liang, G Zhu, W Wu, W Guo, X Yan, J Xu, ...
ACS nano 5 (8), 6629-6636, 2011
Enhancing Light Emission of ZnO‐Nanofilm/Si‐Micropillar Heterostructure Arrays by Piezo‐Phototronic Effect
X Li, M Chen, R Yu, T Zhang, D Song, R Liang, Q Zhang, S Cheng, ...
Advanced Materials 27 (30), 4447-4453, 2015
Tuning light emission of a pressure-sensitive silicon/ZnO nanowires heterostructure matrix through piezo-phototronic effects
M Chen, C Pan, T Zhang, X Li, R Liang, ZL Wang
Acs Nano 10 (6), 6074-6079, 2016
Ferroelastic switching in a layered-perovskite thin film
C Wang, X Ke, J Wang, R Liang, Z Luo, Y Tian, D Yi, Q Zhang, J Wang, ...
Nature communications 7 (1), 1-9, 2016
MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit
X Liu, R Liang, G Gao, C Pan, C Jiang, Q Xu, J Luo, X Zou, Z Yang, L Liao, ...
Advanced Materials 30 (28), 1800932, 2018
A two-dimensional analytical model for short channel junctionless double-gate MOSFETs
C Jiang, R Liang, J Wang, J Xu
AIP Advances 5 (5), 057122, 2015
A-Si: H solar cells with embedded silver nanoparticles
R Santbergen, R Liang, M Zeman
2010 35th IEEE Photovoltaic Specialists Conference, 000748-000753, 2010
Flexible light emission diode arrays made of transferred Si microwires-ZnO nanofilm with piezo-phototronic effect enhanced lighting
X Li, R Liang, J Tao, Z Peng, Q Xu, X Han, X Wang, C Wang, J Zhu, C Pan, ...
ACS nano 11 (4), 3883-3889, 2017
A two-dimensional analytical model for tunnel field effect transistor and its applications
N Cui, L Liu, Q Xie, Z Tan, R Liang, J Wang, J Xu
Japanese Journal of Applied Physics 52 (4R), 044303, 2013
Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering
N Cui, R Liang, J Wang, J Xu
AIP Advances 2 (2), 022111, 2012
A closed form analytical model of back-gated 2-D semiconductor negative capacitance field effect transistors
C Jiang, M Si, R Liang, J Xu, DY Peide, MA Alam
IEEE Journal of the Electron Devices Society 6, 189-194, 2017
Investigation of negative capacitance gate-all-around tunnel FETs combining numerical simulation and analytical modeling
C Jiang, R Liang, J Xu
IEEE Transactions on Nanotechnology 16 (1), 58-67, 2016
Integration of highly strained SiGe in source and drain with HK and MG for 22 nm bulk PMOS transistors
G Wang, J Luo, C Qin, R Liang, Y Xu, J Liu, J Li, H Yin, J Yan, H Zhu, J Xu, ...
Nanoscale research letters 12 (1), 1-7, 2017
A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification
C Jiang, R Liang, J Wang, J Xu
Journal of Physics D: Applied Physics 48 (36), 365103, 2015
Leakage current of germanium-on-insulator-based junctionless nanowire transistors
C Sun, R Liang, L Liu, J Wang, J Xu
Applied Physics Letters 107 (13), 132105, 2015
Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer
M Zhao, R Liang, J Wang, J Xu
Applied Physics Letters 102 (14), 142906, 2013
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