Stefan W. Glunz
Stefan W. Glunz
Professor of Photovoltaic Energy Conversion, University of Freiburg & Fraunhofer ISE
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Zitiert von
Zitiert von
Improved quantitative description of Auger recombination in crystalline silicon
A Richter, SW Glunz, F Werner, J Schmidt, A Cuevas
Physical review B 86 (16), 165202, 2012
Reassessment of the limiting efficiency for crystalline silicon solar cells
A Richter, M Hermle, SW Glunz
IEEE journal of photovoltaics 3 (4), 1184-1191, 2013
A review and comparison of different methods to determine the series resistance of solar cells
D Pysch, A Mette, SW Glunz
Solar Energy Materials and Solar Cells 91 (18), 1698-1706, 2007
Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2 interface
AG Aberle, S Glunz, W Warta
Journal of Applied Physics 71 (9), 4422-4431, 1992
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
F Feldmann, M Bivour, C Reichel, M Hermle, SW Glunz
Solar energy materials and solar cells 120, 270-274, 2014
Laser‐fired rear contacts for crystalline silicon solar cells
E Schneiderlöchner, R Preu, R Lüdemann, SW Glunz
Progress in Photovoltaics: Research and Applications 10 (1), 29-34, 2002
High efficiency -type Si solar cells on -passivated boron emitters
J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ...
Applied Physics Letters 92 (25), 253504, 2008
Multicrystalline silicon solar cells exceeding 20% efficiency
O Schultz, SW Glunz, GP Willeke
Progress in Photovoltaics: Research and Applications 12 (7), 553-558, 2004
Minority carrier lifetime degradation in boron-doped Czochralski silicon
SW Glunz, S Rein, JY Lee, W Warta
Journal of Applied Physics 90, 2397, 2001
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
A Richter, J Benick, F Feldmann, A Fell, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 173, 96-105, 2017
Diffusion lengths of silicon solar cells from luminescence images
P Würfel, T Trupke, T Puzzer, E Schäffer, W Warta, SW Glunz
Journal of Applied Physics 101 (12), 123110, 2007
Field-effect passivation of the SiOSi interface
SW Glunz, D Biro, S Rein, W Warta
Journal of applied physics 86, 683, 1999
Terawatt-scale photovoltaics: Trajectories and challenges
NM Haegel, R Margolis, T Buonassisi, D Feldman, A Froitzheim, ...
Science 356 (6334), 141-143, 2017
Enhancement of silicon solar cell efficiency by upconversion: Optical and electrical characterization
S Fischer, JC Goldschmidt, P Löper, GH Bauer, R Brüggemann, K Krämer, ...
Journal of applied physics 108 (4), 044912, 2010
Increasing the efficiency of fluorescent concentrator systems
JC Goldschmidt, M Peters, A Bösch, H Helmers, F Dimroth, SW Glunz, ...
Solar Energy Materials and Solar Cells 93 (2), 176-182, 2009
Tunnel oxide passivated contacts as an alternative to partial rear contacts
F Feldmann, M Bivour, C Reichel, H Steinkemper, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 131, 46-50, 2014
Metal aerosol jet printing for solar cell metallization
A Mette, PL Richter, M Hörteis, SW Glunz
Progress in Photovoltaics: Research and Applications 15 (7), 621-627, 2007
UV Degradation and Recovery of Perovskite Solar Cells
SW Lee, S Kim, S Bae, K Cho, T Chung, LE Mundt, S Lee, S Park, H Park, ...
Scientific Reports 6, 38150, 2016
Numerical modeling of highly doped Si: P emitters based on Fermi–Dirac statistics and self-consistent material parameters
PP Altermatt, JO Schumacher, A Cuevas, MJ Kerr, SW Glunz, RR King, ...
Journal of Applied Physics 92 (6), 3187-3197, 2002
Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
S Rein, SW Glunz
Applied Physics Letters 82 (7), 1054-1056, 2003
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