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Neimantas Vainorius
Neimantas Vainorius
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Title
Cited by
Cited by
Year
Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors
J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson
Nano letters 13 (4), 1380-1385, 2013
1522013
Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires
N Vainorius, D Jacobsson, S Lehmann, A Gustafsson, KA Dick, ...
Physical Review B 89 (16), 165423, 2014
742014
Confinement in thickness-controlled GaAs polytype nanodots
N Vainorius, S Lehmann, D Jacobsson, L Samuelson, KA Dick, ME Pistol
Nano letters 15 (4), 2652-2656, 2015
732015
Radial Nanowire Light-Emitting Diodes in the (AlxGa1–x)yIn1–yP Material System
A Berg, S Yazdi, A Nowzari, K Storm, V Jain, N Vainorius, L Samuelson, ...
Nano Letters 16 (1), 656-662, 2016
472016
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching
A Berg, S Lehmann, N Vainorius, A Gustafsson, ME Pistol, LR Wallenberg, ...
Journal of crystal growth 386, 47-51, 2014
442014
Wurtzite GaAs quantum wires: One-dimensional subband formation
N Vainorius, S Lehmann, A Gustafsson, L Samuelson, KA Dick, ME Pistol
Nano Letters 16 (4), 2774-2780, 2016
252016
Growth parameter design for homogeneous material composition in ternary GaxIn1− xP nanowires
A Berg, F Lenrick, N Vainorius, JP Beech, LR Wallenberg, MT Borgström
Nanotechnology 26 (43), 435601, 2015
232015
Electrical and photoelectrical properties of CuInS2–ZnIn2S4 solid solutions
VV Bozhko, AV Novosad, GE Davidyuk, VR Kozer, OV Parasyuk, ...
Journal of alloys and compounds 553, 48-52, 2013
222013
Realization of ultrahigh quality InGaN platelets to be used as relaxed templates for red micro-LEDs
Z Bi, T Lu, J Colvin, E Sjogren, N Vainorius, A Gustafsson, J Johansson, ...
ACS applied materials & interfaces 12 (15), 17845-17851, 2020
192020
Temperature dependent electronic band structure of wurtzite GaAs nanowires
N Vainorius, S Kubitza, S Lehmann, L Samuelson, KA Dick, ME Pistol
Nanoscale 10 (3), 1481-1486, 2018
142018
Sn-seeded GaAs nanowires grown by MOVPE
R Sun, N Vainorius, D Jacobsson, ME Pistol, S Lehmann, KA Dick
Nanotechnology 27 (21), 215603, 2016
142016
Influence of cation-vacancy imperfection on the electrical and photoelectric properties of the Cu1 − x Zn x InS2 alloy
AV Novosad, VV Bozhko, HE Davydyuk, OV Parasyuk, OR Gerasymyk, ...
Semiconductors 48, 286-291, 2014
102014
Semiconductor-oxide heterostructured nanowires using postgrowth oxidation
J Wallentin, M Ek, N Vainorious, K Mergenthaler, L Samuelson, ME Pistol, ...
Nano letters 13 (12), 5961-5966, 2013
82013
Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
K Mergenthaler, N Anttu, N Vainorius, M Aghaeipour, S Lehmann, ...
Nature communications 8 (1), 1634, 2017
72017
Growth and properties of the single AgCd2GaSe4 crystals
VV Bozhko, LV Bulatetska, GY Davydyuk, OV Parasyuk, AP Tretyak, ...
Journal of crystal growth 330 (1), 5-8, 2011
72011
Electrical properties and electronic structure of Cu1− xZnxInSe2 and Cu1− xZnxInS2 single crystals
VV Bozhko, AV Novosad, OV Parasyuk, OY Khyzhun, N Vainorius, ...
Journal of Physics and Chemistry of Solids 82, 42-49, 2015
42015
Influence of irradiation by neutrons on the properties of p+–n–n+ Si radiation detectors
V Kalendra, V Kažukauskas, N Vainorius, JV Vaitkus
Physica B: Condensed Matter 404 (23-24), 4664-4666, 2009
42009
Atomically sharp, crystal phase defined GaAs quantum dots
I Geijselaers, N Vainorius, S Lehmann, CE Pryor, KA Dick, ME Pistol
Applied Physics Letters 119 (26), 263102, 2021
32021
Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons
J Vaitkus, R Bondzinskas, V Kažukauskas, P Malinovskis, A Mekys, ...
Lithuanian Journal of Physics 51 (4), 2011
32011
Specific features of the low-temperature conductivity and photoconductivity of CuInSe2-ZnIn2Se4 alloys
VV Bozhko, OV Novosad, OV Parasyuk, N Vainorius, A Sakaviciues, ...
Semiconductors 48, 727-732, 2014
22014
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