| Transmission line analogy of resonance tunneling phenomena: The generalized impedance concept AN Khondker, MR Khan, AFM Anwar Journal of applied physics 63 (10), 5191-5193, 1988 | 217 | 1988 |
| Temperature dependent transport properties in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N semiconductors AFM Anwar, S Wu, RT Webster IEEE Transactions on Electron devices 48 (3), 567-572, 2001 | 143 | 2001 |
| Calculation of the traversal time in resonant tunneling devices AFM Anwar, AN Khondker, MR Khan Journal of applied physics 65 (7), 2761-2765, 1989 | 128 | 1989 |
| Memristor PUF—A security primitive: Theory and experiment A Mazady, MT Rahman, D Forte, M Anwar IEEE Journal on Emerging and Selected Topics in Circuits and Systems 5 (2 …, 2015 | 98 | 2015 |
| Bias induced strain in AlGaN∕ GaN heterojunction field effect transistors and its implications AFM Anwar, RT Webster, KV Smith Applied physics letters 88 (20), 2006 | 94 | 2006 |
| Impact ionization in inalas/ingaas/inalas hemt's RT Webster, S Wu, AFM Anwar IEEE Electron Device Letters 21 (5), 193-195, 2000 | 85 | 2000 |
| Terahertz characterization of electronic components and comparison of terahertz imaging with x-ray imaging techniques K Ahi, N Asadizanjani, S Shahbazmohamadi, M Tehranipoor, M Anwar Terahertz Physics, Devices, and Systems IX: Advanced Applications in …, 2015 | 81 | 2015 |
| Advanced terahertz techniques for quality control and counterfeit detection K Ahi, M Anwar Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry …, 2016 | 78 | 2016 |
| Developing terahertz imaging equation and enhancement of the resolution of terahertz images using deconvolution K Ahi, M Anwar Terahertz physics, devices, and systems X: advanced applications in industry …, 2016 | 73 | 2016 |
| Study of temperature, air dew point temperature and reactant flow effects on proton exchange membrane fuel cell performances using electrochemical spectroscopy and voltammetry … S Wasterlain, D Candusso, D Hissel, F Harel, P Bergman, P Menard, ... Journal of Power Sources 195 (4), 984-993, 2010 | 66 | 2010 |
| AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics EW Faraclas, AFM Anwar Solid-state electronics 50 (6), 1051-1056, 2006 | 62 | 2006 |
| A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series A Ahmed, SS Islam, AFM Anwar IEEE Transactions on Microwave Theory and Techniques 49 (9), 1518-1524, 2001 | 49 | 2001 |
| Insulated gate silicon nanowire transistor and method of manufacture AF Anwar, RT Webster US Patent 7,700,419, 2010 | 48 | 2010 |
| Self-heating and trapping effects on the RF performance of GaN MESFETs SS Islam, AFM Anwar IEEE Transactions on Microwave Theory and Techniques 52 (4), 1229-1236, 2004 | 46 | 2004 |
| High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films L Adnane, F Dirisaglik, A Cywar, K Cil, Y Zhu, C Lam, AFM Anwar, ... Journal of Applied Physics 122 (12), 2017 | 41 | 2017 |
| Memristor: Part I—The underlying physics and conduction mechanism A Mazady, M Anwar IEEE Transactions on electron devices 61 (4), 1054-1061, 2014 | 39 | 2014 |
| Modeling of terahertz images based on x-ray images: a novel approach for verification of terahertz images and identification of objects with fine details beyond terahertz … K Ahi, M Anwar Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry …, 2016 | 37 | 2016 |
| Electron escape time from single quantum wells KR Lefebvre, AFM Anwar IEEE journal of quantum electronics 33 (2), 187-191, 1997 | 37 | 1997 |
| Temperature-dependent nonlinearities in GaN/AlGaN HEMTs SS Islam, AFM Anwar IEEE Transactions on Electron Devices 49 (5), 710-717, 2002 | 36 | 2002 |
| Schottky barrier height in GaN/AlGaN heterostructures AFM Anwar, EW Faraclas Solid-state electronics 50 (6), 1041-1045, 2006 | 33 | 2006 |
