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Harumasa Yoshida. 吉田治正 JH2VMN
Harumasa Yoshida. 吉田治正 JH2VMN
Freelance Scientist, Former Research Professor of Mie University, Japan.
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Titel
Zitiert von
Zitiert von
Jahr
Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
H Yoshida, Y Yamashita, M Kuwabara, H Kan
Applied physics letters 93 (24), 241106, 2008
2772008
A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
H Yoshida, Y Yamashita, M Kuwabara, H Kan
nature photonics 2 (9), 551-554, 2008
2262008
AlGaN-based laser diodes for the short-wavelength ultraviolet region
H Yoshida, M Kuwabara, Y Yamashita, Y Takagi, K Uchiyama, H Kan
New Journal of Physics 11 (12), 125013, 2009
782009
Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode
H Yoshida, M Kuwabara, Y Yamashita, K Uchiyama, H Kan
Applied Physics Letters 96 (21), 211122, 2010
732010
Fabrication of deep-ultraviolet-light-source tube using Si-doped AlGaN
Y Shimahara, H Miyake, K Hiramatsu, F Fukuyo, T Okada, H Takaoka, ...
Applied physics express 4 (4), 042103, 2011
662011
Formation of GaN self-organized nanotips by reactive ion etching
H Yoshida, T Urushido, H Miyake, K Hiramatsu
Japanese Journal of Applied Physics 40 (12A), L1301, 2001
662001
Novel UV devices on high-quality AlGaN using grooved underlying layer
H Tsuzuki, F Mori, K Takeda, M Iwaya, S Kamiyama, H Amano, I Akasaki, ...
Journal of crystal growth 311 (10), 2860-2863, 2009
632009
Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. sapphire substrate
H Yoshida, Y Takagi, M Kuwabara, H Amano, H Kan
Japanese Journal of Applied Physics 46 (9R), 5782, 2007
612007
High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer
H Tsuzuki, F Mori, K Takeda, T Ichikawa, M Iwaya, S Kamiyama, H Amano, ...
physica status solidi (a) 206 (6), 1199-1204, 2009
562009
Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate
H Taketomi, Y Aoki, Y Takagi, A Sugiyama, M Kuwabara, H Yoshida
Japanese Journal of Applied Physics 55 (5S), 05FJ05, 2016
502016
A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN
Y Aoki, M Kuwabara, Y Yamashita, Y Takagi, A Sugiyama, H Yoshida
Applied Physics Letters 107 (15), 151103, 2015
452015
Anosmia following head trauma: preliminary study of steroid treatment
K IKEDA, T SAKURADA, T TAKASAKA, T OKITSU, S YOSHIDA
The Tohoku Journal of Experimental Medicine 177 (4), 343-351, 1995
431995
Audio apparatus
R Matsumoto, D Ishikawa, H Yoshida, M Hamada, C Akaishi
US Patent 6,388,951, 2002
392002
The current status of ultraviolet laser diodes
H Yoshida, M Kuwabara, Y Yamashita, K Uchiyama, H Kan
physica status solidi (a) 208 (7), 1586-1589, 2011
362011
Negatively charged polyacrylonitrile graft copolymer membrane for permeation and separation of plasma proteins
H Miyama, H Yoshida, Y Nosaka, H Tanzawa
Die Makromolekulare Chemie, Rapid Communications 9 (2), 57-61, 1988
361988
High power density vertical-cavity surface-emitting lasers with ion implanted isolated current aperture
A Higuchi, H Naito, K Torii, M Miyamoto, J Maeda, H Miyajima, H Yoshida
Optics express 20 (4), 4206-4212, 2012
352012
Growth of high-quality Si-doped AlGaN by low-pressure metalorganic vapor phase epitaxy
Y Shimahara, H Miyake, K Hiramatsu, F Fukuyo, T Okada, H Takaoka, ...
Japanese journal of applied physics 50 (9R), 095502, 2011
302011
Growth and characterization of AlGaN multiple quantum wells for electron-beam target for deep-ultraviolet light sources
F Fukuyo, S Ochiai, H Miyake, K Hiramatsu, H Yoshida, Y Kobayashi
Japanese Journal of Applied Physics 52 (1S), 01AF03, 2013
272013
Significance of two-point strain measurement in SPT
T Matsumoto, H Sekiguchi, H Yoshida, K Kita
Soils and Foundations 32 (2), 67-82, 1992
261992
Group III nitride semiconductor film and its production method
K Hiramatsu, H Miyake, H Yoshida, T Urushido, Y Terada
US Patent App. 10/484,574, 2004
252004
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