Sebastian Koelling
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Retracted article: Quantized majorana conductance
H Zhang, CX Liu, S Gazibegovic, D Xu, JA Logan, G Wang, N Van Loo, ...
Nature 556 (7699), 74-79, 2018
RETRACTED ARTICLE: Epitaxy of advanced nanowire quantum devices
S Gazibegovic, D Car, H Zhang, SC Balk, JA Logan, MWA De Moor, ...
Nature 548 (7668), 434-438, 2017
Ballistic superconductivity in semiconductor nanowires
H Zhang, Ö Gül, S Conesa-Boj, MP Nowak, M Wimmer, K Zuo, V Mourik, ...
Nature communications 8 (1), 1-7, 2017
Direct-bandgap emission from hexagonal Ge and SiGe alloys
EMT Fadaly, A Dijkstra, JR Suckert, D Ziss, MAJ van Tilburg, C Mao, ...
Nature 580 (7802), 205-209, 2020
Hexagonal silicon realized
HIT Hauge, MA Verheijen, S Conesa-Boj, T Etzelstorfer, M Watzinger, ...
Nano letters 15 (9), 5855-5860, 2015
Hard superconducting gap in InSb nanowires
O Gül, H Zhang, FK de Vries, J van Veen, K Zuo, V Mourik, ...
Nano letters 17 (4), 2690-2696, 2017
Thin film growth of Fe-based superconductors: from fundamental properties to functional devices. A comparative review
S Haindl, M Kidszun, S Oswald, C Hess, B Büchner, S Kölling, L Wilde, ...
Reports on Progress in Physics 77 (4), 046502, 2014
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ...
Nano letters 17 (3), 1538-1544, 2017
Single-crystalline hexagonal silicon–germanium
HIT Hauge, S Conesa-Boj, MA Verheijen, S Koelling, EPAM Bakkers
Nano Letters 17 (1), 85-90, 2017
Atom-probe for FinFET dopant characterization
AK Kambham, J Mody, M Gilbert, S Koelling, W Vandervorst
Ultramicroscopy 111 (6), 535-539, 2011
Boosting hole mobility in coherently strained [110]-oriented Ge–Si core–shell nanowires
S Conesa-Boj, A Li, S Koelling, M Brauns, J Ridderbos, TT Nguyen, ...
Nano letters 17 (4), 2259-2264, 2017
In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography
S Koelling, N Innocenti, A Schulze, M Gilbert, AK Kambham, ...
Journal of Applied Physics 109 (10), 104909, 2011
Atom probe analysis of a 3D finFET with high-k metal gate
M Gilbert, W Vandervorst, S Koelling, AK Kambham
Ultramicroscopy 111 (6), 530-534, 2011
Atom-by-atom analysis of semiconductor nanowires with parts per million sensitivity
S Koelling, A Li, A Cavalli, S Assali, D Car, S Gazibegovic, E Bakkers, ...
Nano letters 17 (2), 599-605, 2017
P–N Junctions in Ultrathin Topological Insulator Sb2Te3/Bi2Te3 Heterostructures Grown by Molecular Beam Epitaxy
M Lanius, J Kampmeier, C Weyrich, S Kölling, M Schall, P Schüffelgen, ...
Crystal growth & design 16 (4), 2057-2061, 2016
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP (001), InP (111) B, and InP (011) surfaces
JS Lee, S Choi, M Pendharkar, DJ Pennachio, B Markman, M Seas, ...
Physical Review Materials 3 (8), 084606, 2019
High-purity 3D nano-objects grown by focused-electron-beam induced deposition
R Córdoba, N Sharma, S Kölling, PM Koenraad, B Koopmans
Nanotechnology 27 (35), 355301, 2016
High depth resolution analysis of Si/SiGe multilayers with the atom probe
S Koelling, M Gilbert, J Goossens, A Hikavyy, O Richard, W Vandervorst
Applied Physics Letters 95 (14), 144106, 2009
Suppressing segregation in highly phosphorus doped silicon monolayers
JG Keizer, S Koelling, PM Koenraad, MY Simmons
ACS nano 9 (12), 12537-12541, 2015
Optical study of the band structure of wurtzite GaP nanowires
S Assali, J Greil, I Zardo, A Belabbes, MWA De Moor, S Koelling, ...
Journal of Applied Physics 120 (4), 044304, 2016
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