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Christopher Münch
Christopher Münch
Bestätigte E-Mail-Adresse bei kit.edu
Titel
Zitiert von
Zitiert von
Jahr
Defect characterization and test generation for spintronic-based compute-in-memory
SM Nair, C Münch, MB Tahoori
2020 IEEE European Test Symposium (ETS), 1-6, 2020
182020
Reliable in-memory neuromorphic computing using spintronics
C Münch, R Bishnoi, MB Tahoori
Proceedings of the 24th Asia and South Pacific design automation conference …, 2019
162019
Special session–emerging memristor based memory and CIM architecture: Test, repair and yield analysis
R Bishnoi, L Wu, M Fieback, C Münch, SM Nair, M Tahoori, Y Wang, H Li, ...
2020 IEEE 38th VLSI Test Symposium (VTS), 1-10, 2020
122020
Spindrop: Dropout-based bayesian binary neural networks with spintronic implementation
ST Ahmed, K Danouchi, C Münch, G Prenat, L Anghel, MB Tahoori
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 13 (1 …, 2023
112023
Tolerating retention failures in neuromorphic fabric based on emerging resistive memories
C Münch, R Bishnoi, MB Tahoori
2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC), 393-400, 2020
102020
Binary bayesian neural networks for efficient uncertainty estimation leveraging inherent stochasticity of spintronic devices
S Tuhin Ahmed, K Danouchi, C Münch, G Prenat, A Lorena, M B. Tahoori
Proceedings of the 17th ACM International Symposium on Nanoscale …, 2022
72022
MBIST-supported trim adjustment to compensate thermal behavior of MRAM
C Münch, J Yun, M Keim, MB Tahoori
2021 IEEE European Test Symposium (ETS), 1-6, 2021
72021
Process and runtime variation robustness for spintronic-based neuromorphic fabric
ST Ahmed, M Mayahinia, M Hefenbrock, C Münch, MB Tahoori
2022 IEEE European Test Symposium (ETS), 1-2, 2022
62022
Defect characterization of spintronic-based neuromorphic circuits
C Münch, MB Tahoori
2020 IEEE 26th International Symposium on On-Line Testing and Robust System …, 2020
62020
Neuroscrub+: Mitigating retention faults using flexible approximate scrubbing in neuromorphic fabric based on resistive memories
ST Ahmed, M Hefenbrock, C Münch, MB Tahoori
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2022
52022
Testing resistive memory based neuromorphic architectures using reference trimming
C Münch, MB Tahoori
2021 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2021
52021
Smart Hammering: A practical method of pinhole detection in MRAM memories
SB Mamaghani, C Münch, J Yun, M Keim, MB Tahoori
2023 Design, Automation & Test in Europe Conference & Exhibition (DATE), 1-6, 2023
42023
PVT Analysis for RRAM and STT-MRAM-based Logic Computation-in-Memory
M Fieback, C Münch, A Gebregiorgis, GC Medeiros, M Taouil, S Hamdioui, ...
2022 IEEE European Test Symposium (ETS), 1-6, 2022
42022
NeuroScrub: Mitigating retention failures using approximate scrubbing in Neuromorphic fabric based on resistive memories
ST Ahmed, M Hefenbrock, C Münch, MB Tahoori
2021 IEEE European Test Symposium (ETS), 1-6, 2021
42021
Multi-bit non-volatile spintronic flip-flop
C Münch, R Bishnoi, MB Tahoori
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018
42018
MBIST-based Trim-Search Test Time Reduction for STT-MRAM
C Münch, J Yun, M Keim, MB Tahoori
2022 IEEE 40th VLSI Test Symposium (VTS), 1-7, 2022
32022
Special session: Stt-mrams: Technology, design and test
A Gebregiorgis, L Wu, C Münch, S Rao, MB Tahoori, S Hamdioui
2022 IEEE 40th VLSI Test Symposium (VTS), 1-10, 2022
32022
A Novel Oscillation-Based Reconfigurable In-Memory Computing Scheme With Error Correction
C Münch, N Sayed, R Bishnoi, M Tahoori
IEEE Transactions on Magnetics 57 (2), 1-10, 2020
32020
Design-time reference current generation for robust spintronic-based neuromorphic architecture
ST Ahmed, M Mayahinia, M Hefenbrock, C Münch, MB Tahoori
ACM Journal on Emerging Technologies in Computing Systems 20 (1), 1-20, 2023
22023
Analyzing and Mitigating Sensing Failures in Spintronic-based Computing in Memory
M Mayahinia, C Münch, MB Tahoori
2021 IEEE International Test Conference (ITC), 268-277, 2021
12021
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