Folgen
Axel Hoffmann
Axel Hoffmann
Institute of Solid State Physics, Technical University of Berlin
Bestätigte E-Mail-Adresse bei tu-berlin.de - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Bound exciton and donor–acceptor pair recombinations in ZnO
BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ...
physica status solidi (b) 241 (2), 231-260, 2004
19122004
Zinc Oxide: From Fundamental Properties Towards Novel Applications
CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts
Springer, 2010
6902010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ...
Physical Review B 56 (16), 10435, 1997
6211997
Group III nitride semiconductor compounds: physics and applications
Clarendon Press, 1998
5621998
Nitrogen-related local vibrational modes in ZnO: N
A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ...
Applied Physics Letters 80 (11), 1909-1911, 2002
5292002
Zone-boundary phonons in hexagonal and cubic GaN
H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ...
Physical Review B 55 (11), 7000, 1997
3831997
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure
H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ...
Applied physics letters 80 (2), 210-212, 2002
3732002
Excited states and energy relaxation in stacked InAs/GaAs quantum dots
R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ...
Physical Review B 57 (15), 9050, 1998
3211998
Properties of the yellow luminescence in undoped GaN epitaxial layers
DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ...
Phys. Rev. B 72 (23), 16702, 1995
3091995
Zinc oxide materials for electronic and optoelectronic device applications
P Capper, S Kasap, A Willoughby
Wiley, 2011
2292011
Semiconductor nanostructures
D Bimberg
Springer, 2008
2172008
High Si and Ge n-type doping of GaN doping-Limits and impact on stress
S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ...
Applied Physics Letters 100 (12), 122104, 2012
2162012
Exciton fine structure in undoped GaN epitaxial films
D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ...
Physical Review B 53 (24), 16543, 1996
2091996
Existence of a phonon bottleneck for excitons in quantum dots
R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg
Physical review b 64 (24), 241305, 2001
2052001
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy
H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ...
Solid State Communications 96 (12), 943-949, 1995
2041995
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B 84 (3), 035313, 2011
2022011
Optical properties of the nitrogen acceptor in epitaxial ZnO
A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ...
physica status solidi (b) 234 (3), R7-R9, 2002
1992002
Free excitons in wurtzite GaN
AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ...
Physical Review B 64 (11), 115204, 2001
1942001
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix
M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ...
Applied physics letters 72 (8), 942-944, 1998
1921998
Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro …
F Bertram, T Riemann, J Christen, A Kaschner, A Hoffmann, C Thomsen, ...
Applied Physics Letters 74 (3), 359-361, 1999
1671999
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20