| Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering JW Shon, J Ohta, K Ueno, A Kobayashi, H Fujioka Scientific Reports 4 (1), 5325, 2014 | 155 | 2014 |
| Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates A Kobayashi, S Kawano, Y Kawaguchi, J Ohta, H Fujioka Applied physics letters 90 (4), 2007 | 107 | 2007 |
| Room temperature layer by layer growth of GaN on atomically flat ZnO A Kobayashi, H Fujioka, J Ohta, M Oshima Japanese journal of applied physics 43 (1A), L53, 2003 | 100 | 2003 |
| Low temperature epitaxial growth of In0. 25Ga0. 75N on lattice-matched ZnO by pulsed laser deposition A Kobayashi, J Ohta, H Fujioka Journal of applied physics 99 (12), 2006 | 90 | 2006 |
| Polarity control of GaN grown on ZnO (0001¯) surfaces A Kobayashi, Y Kawaguchi, J Ohta, H Fujioka, K Fujiwara, A Ishii Applied physics letters 88 (18), 2006 | 80 | 2006 |
| High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering Y Arakawa, K Ueno, A Kobayashi, J Ohta, H Fujioka APL Materials 4 (8), 2016 | 77 | 2016 |
| Electrical properties of Si-doped GaN prepared using pulsed sputtering Y Arakawa, K Ueno, H Imabeppu, A Kobayashi, J Ohta, H Fujioka Applied Physics Letters 110 (4), 2017 | 76 | 2017 |
| Room-temperature epitaxial growth of high quality AlN on SiC by pulsed sputtering deposition K Sato, J Ohta, S Inoue, A Kobayashi, H Fujioka Applied physics express 2 (1), 011003, 2009 | 76 | 2009 |
| Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition Y Kawaguchi, J Ohta, A Kobayashi, H Fujioka Applied Physics Letters 87 (22), 2005 | 67 | 2005 |
| Field-effect transistors based on cubic indium nitride M Oseki, K Okubo, A Kobayashi, J Ohta, H Fujioka Scientific reports 4 (1), 3951, 2014 | 54 | 2014 |
| Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature MH Kim, M Oshima, H Kinoshita, Y Shirakura, K Miyamura, J Ohta, ... Applied physics letters 89 (3), 2006 | 48 | 2006 |
| Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering K Ueno, T Fudetani, Y Arakawa, A Kobayashi, J Ohta, H Fujioka APL Materials 5 (12), 2017 | 44 | 2017 |
| Low temperature epitaxial growth of GaN films on LiGaO2 substrates K Sakurada, A Kobayashi, Y Kawaguchi, J Ohta, H Fujioka Applied physics letters 90 (21), 2007 | 40 | 2007 |
| Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition A Kobayashi, J Ohta, Y Kawaguchi, H Fujioka Applied physics letters 89 (11), 2006 | 38 | 2006 |
| AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering T Watanabe, J Ohta, T Kondo, M Ohashi, K Ueno, A Kobayashi, H Fujioka Applied Physics Letters 104 (18), 2014 | 37 | 2014 |
| Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering K Ueno, Y Arakawa, A Kobayashi, J Ohta, H Fujioka Applied Physics Express 10 (10), 101002, 2017 | 36 | 2017 |
| Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering JW Shon, J Ohta, K Ueno, A Kobayashi, H Fujioka Applied Physics Express 7 (8), 085502, 2014 | 35 | 2014 |
| Characteristics of single crystal ZnO annealed in a ceramic ZnO box and its application for epitaxial growth of GaN A Kobayashi, J Ohta, H Fujioka Japanese journal of applied physics 45 (7R), 5724, 2006 | 31 | 2006 |
| Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer A Kobayashi, S Kawano, K Ueno, J Ohta, H Fujioka, H Amanai, S Nagao, ... Applied Physics Letters 91 (19), 2007 | 30 | 2007 |
| Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils H Kim, J Ohta, K Ueno, A Kobayashi, M Morita, Y Tokumoto, H Fujioka Scientific reports 7 (1), 2112, 2017 | 29 | 2017 |
Kohei UenoThe University of TokyoBestätigte E-Mail-Adresse bei iis.u-tokyo.ac.jp
