Changwook Jeong
Zitiert von
Zitiert von
Highly manufacturable high density phase change memory of 64Mb and beyond
SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Highly reliable 50nm contact cell technology for 256Mb PRAM
SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005
Full integration of highly manufacturable 512Mb PRAM based on 90nm technology
JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
2006 International Electron Devices Meeting, 1-4, 2006
Switching current scaling and reliability evaluation in PRAM
CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ...
IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, CA, 28-29, 2004
Co‐percolating graphene‐wrapped silver nanowire network for high performance, highly stable, transparent conducting electrodes
R Chen, SR Das, C Jeong, MR Khan, DB Janes, MA Alam
Advanced Functional Materials 23 (41), 5150-5158, 2013
On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients
C Jeong, R Kim, M Luisier, S Datta, M Lundstrom
Journal of Applied Physics 107 (2), 023707, 2010
Thermal conductivity of bulk and thin-film silicon: A Landauer approach
C Jeong, S Datta, M Lundstrom
Journal of Applied Physics 111 (9), 093708, 2012
Prospects for nanowire-doped polycrystalline graphene films for ultratransparent, highly conductive electrodes
C Jeong, P Nair, M Khan, M Lundstrom, MA Alam
Nano letters 11 (11), 5020-5025, 2011
Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films
CW Jeong, JS Lee, SK Joo
Japanese Journal of Applied Physics 40 (1R), 285, 2001
Full integration and cell characteristics for 64Mb nonvolatile PRAM
SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
YJ Song, YN Hwang, S Nam, SL Cho, GH Koh, CM Lee, BJ Kuh, Y Ha, ...
US Patent 7,482,616, 2009
Near-Equilibrium Transport: Fundamentals and Applications
MS Lundstrom, C Jeong
World Scientific Publishing Company, 2012
Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology
YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006
Full dispersion versus Debye model evaluation of lattice thermal conductivity with a Landauer approach
C Jeong, S Datta, M Lundstrom
Journal of Applied Physics 109 (7), 073718, 2011
Phase-change random access memory device and method of operating the same
CW Jeong, SY Lee, WC Jeong, JH Park, SJ Ahn, F Yeung
US Patent 7,440,308, 2008
Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same
WC Jeong, HJ Kim, JH Park, CW Jeong
US Patent 7,521,706, 2009
Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory
F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
On backscattering and mobility in nanoscale silicon MOSFETs
C Jeong, DA Antoniadis, MS Lundstrom
IEEE Transactions on electron devices 56 (11), 2762-2769, 2009
Phase-change memory device having a barrier layer and manufacturing method
YN Hwang, GH Koh, SJ Ahn, SL Cho, SH Lee, KC Ryoo, CW Jeong, ...
US Patent 7,411,208, 2008
On the best bandstructure for thermoelectric performance: A Landauer perspective
C Jeong, R Kim, MS Lundstrom
Journal of Applied Physics 111 (11), 113707, 2012
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20