|Highly manufacturable high density phase change memory of 64Mb and beyond|
SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
|Highly reliable 50nm contact cell technology for 256Mb PRAM|
SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005
|Full integration of highly manufacturable 512Mb PRAM based on 90nm technology|
JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
2006 International Electron Devices Meeting, 1-4, 2006
|Switching current scaling and reliability evaluation in PRAM|
CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ...
IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, CA, 28-29, 2004
|Co‐percolating graphene‐wrapped silver nanowire network for high performance, highly stable, transparent conducting electrodes|
R Chen, SR Das, C Jeong, MR Khan, DB Janes, MA Alam
Advanced Functional Materials 23 (41), 5150-5158, 2013
|On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients|
C Jeong, R Kim, M Luisier, S Datta, M Lundstrom
Journal of Applied Physics 107 (2), 023707, 2010
|Thermal conductivity of bulk and thin-film silicon: A Landauer approach|
C Jeong, S Datta, M Lundstrom
Journal of Applied Physics 111 (9), 093708, 2012
|Prospects for nanowire-doped polycrystalline graphene films for ultratransparent, highly conductive electrodes|
C Jeong, P Nair, M Khan, M Lundstrom, MA Alam
Nano letters 11 (11), 5020-5025, 2011
|Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films|
CW Jeong, JS Lee, SK Joo
Japanese Journal of Applied Physics 40 (1R), 285, 2001
|Full integration and cell characteristics for 64Mb nonvolatile PRAM|
SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004
|Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same|
YJ Song, YN Hwang, S Nam, SL Cho, GH Koh, CM Lee, BJ Kuh, Y Ha, ...
US Patent 7,482,616, 2009
|Near-Equilibrium Transport: Fundamentals and Applications|
MS Lundstrom, C Jeong
World Scientific Publishing Company, 2012
|Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology|
YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006
|Full dispersion versus Debye model evaluation of lattice thermal conductivity with a Landauer approach|
C Jeong, S Datta, M Lundstrom
Journal of Applied Physics 109 (7), 073718, 2011
|Phase-change random access memory device and method of operating the same|
CW Jeong, SY Lee, WC Jeong, JH Park, SJ Ahn, F Yeung
US Patent 7,440,308, 2008
|Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same|
WC Jeong, HJ Kim, JH Park, CW Jeong
US Patent 7,521,706, 2009
|Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory|
F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
|On backscattering and mobility in nanoscale silicon MOSFETs|
C Jeong, DA Antoniadis, MS Lundstrom
IEEE Transactions on electron devices 56 (11), 2762-2769, 2009
|Phase-change memory device having a barrier layer and manufacturing method|
YN Hwang, GH Koh, SJ Ahn, SL Cho, SH Lee, KC Ryoo, CW Jeong, ...
US Patent 7,411,208, 2008
|On the best bandstructure for thermoelectric performance: A Landauer perspective|
C Jeong, R Kim, MS Lundstrom
Journal of Applied Physics 111 (11), 113707, 2012