A full Ka-band power amplifier with 32.9% PAE and 15.3-dBm power in 65-nm CMOS H Jia, CC Prawoto, B Chi, Z Wang, CP Yue IEEE Transactions on Circuits and Systems I: Regular Papers 65 (9), 2657-2668, 2018 | 129 | 2018 |
A 32.9% PAE, 15.3 dBm, 21.6–41.6 GHz power amplifier in 65nm CMOS using coupled resonators H Jia, CC Prawoto, B Chi, Z Wang, CP Yue 2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), 345-348, 2016 | 24 | 2016 |
Control of hexagonal boron nitride dielectric thickness by single layer etching Z Ma, C Prawoto, Z Ahmed, Y Xiao, L Zhang, C Zhou, M Chan Journal of Materials Chemistry C 7 (21), 6273-6278, 2019 | 17 | 2019 |
Ultralow- Dielectric With Structured Pores for Interconnect Delay Reduction Y Xiao, Z Ma, C Prawoto, C Zhou, M Chan IEEE Transactions on Electron Devices 67 (5), 2071-2075, 2020 | 8 | 2020 |
Interconnect technology with h-BN-capped air-gaps C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan IEEE Electron Device Letters 40 (11), 1876-1879, 2019 | 8 | 2019 |
Air-gap technology with a large void-fraction for global interconnect delay reduction C Prawoto, Z Ma, Y Xiao, S Raju, M Chan IEEE Transactions on Electron Devices 68 (10), 5078-5084, 2021 | 6 | 2021 |
Modeling of on-chip wireless power transmission system S Raju, CC Prawoto, M Chan, CP Yue 2015 IEEE International Wireless Symposium (IWS 2015), 1-4, 2015 | 6 | 2015 |
Prototyping of terahertz metasurface by one-step lithographically defined templating S Zhou, S Mu, S Raju, C Prawoto, X Ruan, K Ng, M Chan IEEE Photonics Technology Letters 30 (10), 971-974, 2018 | 4 | 2018 |
Compact modeling of phase change memory with parameter extractions F Ding, X Li, Y Chen, Z Song, R Wang, CC Prawoto, M Chan, L Zhang, ... ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 2 | 2022 |
Current conduction mechanisms in h-BN as a dielectric material Z Ma, CC Prawoto, S Li, Z Ahmed, L Zhang, M Chan 2018 IEEE International Conference on Electron Devices and Solid State …, 2018 | 2 | 2018 |
Impact of CNT diameter distribution on CNT filled via scaling C Prawoto, S Li, M Chan 2018 IEEE International Conference on Electron Devices and Solid State …, 2018 | 2 | 2018 |
Influence of fin-width lateral variations of a FinFET CC Prawoto, M Cheralathan, M Chan Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014 | 2 | 2014 |
Low-loss RF passive elements by top-metal air-gap technology C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022 | 1 | 2022 |
High Frequency Monolithic Inductor with Air-Gaps C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 1 | 2020 |
Integration of Carbon Nanotube as Via Contact to MoS2 Z Ma, Y Xiao, CC Prawoto, Z Ahmed, C Zhou, MS Chan | 1 | 2019 |
Synthesis of carbon nanotube in sub-100nm vias on Ni silicide Y Xiao, S Li, C Prawoto, M Chan 2018 IEEE International Conference on Electron Devices and Solid State …, 2018 | 1 | 2018 |
A design methodology of efficient on-chip wireless power transmission S Raju, CC Prawoto, M Chan, CP Yue 2017 International Symposium on VLSI Technology, Systems and Application …, 2017 | 1 | 2017 |
Hollow Airgap Technology for CMOS Maximum Interconnect Capacitance Reduction C Prawoto, Z Ma, Y Xiao, S Raju, M Chan 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022 | | 2022 |
IC structure with air gaps and protective layer and method for manufacturing the same R Salahuddin, MSJ Chan, CC Prawoto US Patent 11,094,581, 2021 | | 2021 |
Interconnect Structures for Reducing Intra-Layer Metal-to-Metal Capacitances C Prawoto, Y Xiao, M Chan 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | | 2020 |