|Room-temperature InP/InAsP quantum discs-in-nanowire infrared photodetectors|
M Karimi, V Jain, M Heurlin, A Nowzari, L Hussain, D Lindgren, JE Stehr, ...
Nano letters 17 (6), 3356-3362, 2017
|Bias-dependent spectral tuning in InP nanowire-based photodetectors|
V Jain, M Heurlin, M Karimi, L Hussain, M Aghaeipour, A Nowzari, A Berg, ...
Nanotechnology 28 (11), 114006, 2017
|Defect-induced infrared electroluminescence from radial GaInP/AlGaInP quantum well nanowire array light-emitting diodes|
L Hussain, M Karimi, A Berg, V Jain, MT Borgström, A Gustafsson, ...
Nanotechnology 28 (48), 485205, 2017
|Characterization of InSb QDs grown on InAs (100) substrate by MBE and MOVPE|
A Karim, O Gustafsson, L Hussain, Q Wang, B Noharet, M Hammar, ...
Optical Sensing and Detection II 8439, 411-418, 2012
|Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors|
|SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE|
L Hussain, H Pettersson, Q Wang, A Karim, J Anderson, M Jafari, J Song, ...
Journal of the Korean Physical Society 73 (11), 1604-1611, 2018