| Resonant cavity light‐emitting diode EF Schubert, YH Wang, AY Cho, LW Tu, GJ Zydzik Applied physics letters 60 (8), 921-923, 1992 | 465 | 1992 |
| Light emitting diode AY Cho, EF Schubert, LW Tu, GJ Zydzik US Patent 5,226,053, 1993 | 210 | 1993 |
| Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy LW Tu, CL Hsiao, TW Chi, I Lo, KY Hsieh Applied Physics Letters 82 (10), 1601-1603, 2003 | 159 | 2003 |
| GaN nanowire ultraviolet photodetector with a graphene transparent contact AV Babichev, H Zhang, P Lavenus, FH Julien, AY Egorov, YT Lin, LW Tu, ... Applied Physics Letters 103 (20), 2013 | 152 | 2013 |
| Elimination of heterojunction band discontinuities by modulation doping EF Schubert, LW Tu, GJ Zydzik, RF Kopf, A Benvenuti, MR Pinto Applied physics letters 60 (4), 466-468, 1992 | 131 | 1992 |
| Generation of electricity in GaN nanorods induced by piezoelectric effect WS Su, YF Chen, CL Hsiao, LW Tu Applied Physics Letters 90 (6), 2007 | 125 | 2007 |
| Spin splitting in modulation-doped heterostructures I Lo, JK Tsai, WJ Yao, PC Ho, LW Tu, TC Chang, S Elhamri, WC Mitchel, ... Physical Review B 65 (16), 161306, 2002 | 120 | 2002 |
| Anomalous temporal response of gain guided surface emitting lasers NK Dutta, LW Tu, G Hasnain, G Zydzik, YH Wang, AY Cho Electronics Letters 27 (3), 208-210, 1991 | 114 | 1991 |
| Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles A de Luna Bugallo, M Tchernycheva, G Jacopin, L Rigutti, FH Julien, ... Nanotechnology 21 (31), 315201, 2010 | 100 | 2010 |
| Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition CY Huang, RH Horng, DS Wuu, LW Tu, HS Kao Applied Physics Letters 102 (1), 2013 | 98 | 2013 |
| High-dielectric-constant metal-oxide-semiconductor structure LW Tu, WC Kuo, KH Lee, PH Tsao, CM Lai, AK Chu, JK Sheu Applied Physics Letters 77 (23), 3788-3790, 2000 | 97 | 2000 |
| Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy CL Hsiao, LW Tu, TW Chi, M Chen, TF Young, CT Chia, YM Chang Applied Physics Letters 90 (4), 2007 | 89 | 2007 |
| Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of pin InGaN single homojunction solar cells SW Feng, CM Lai, CH Chen, WC Sun, LW Tu Journal of applied physics 108 (9), 2010 | 86 | 2010 |
| Vertical cavity surface emmitting lasers with transparent electrodes RF Kopf, HM O'Bryan Jr, EF Schubert, LW Tu, YH Wang, GJ Zydzik US Patent 5,115,441, 1992 | 86 | 1992 |
| Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy M Passlack, M Hong, JP Mannaerts, JR Kwo, LW Tu Applied physics letters 68 (25), 3605-3607, 1996 | 85 | 1996 |
| Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces M Hong, JP Mannaerts, JE Bower, J Kwo, M Passlack, WY Hwang, LW Tu Journal of crystal growth 175, 422-427, 1997 | 80 | 1997 |
| Effects of crystallinity and point defects on optoelectronic applications of β-Ga2O3 epilayers P Ravadgar, RH Horng, SD Yao, HY Lee, BR Wu, SL Ou, LW Tu Optics Express 21 (21), 24599-24610, 2013 | 73 | 2013 |
| Specular scattering probability of acoustic phonons in atomically flat interfaces YC Wen, CL Hsieh, KH Lin, HP Chen, SC Chin, CL Hsiao, YT Lin, ... Physical review letters 103 (26), 264301, 2009 | 71 | 2009 |
| Vertical cavity surface emitting lasers with electrically conducting mirrors DG Deppe, LC Feldman, RF Kopf, EF Schubert, LW Tu, GJ Zydzik US Patent 5,068,868, 1991 | 69 | 1991 |
| In‐vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric LW Tu, EF Schubert, M Hong, GJ Zydzik Journal of applied physics 80 (11), 6448-6451, 1996 | 64 | 1996 |
