Energy landscape of fullerene materials: a comparison of boron to boron nitride and carbon S De, A Willand, M Amsler, P Pochet, L Genovese, S Goedecker Physical review letters 106 (22), 225502, 2011 | 167 | 2011 |
Order-disorder transformation in Fe-Al under ball milling P Pochet, E Tominez, L Chaffron, G Martin Phys. Rev. B 52 (400), 4006, 1995 | 163 | 1995 |
Optimized energy landscape exploration using the ab initio based activation-relaxation technique E Machado-Charry, LK Béland, D Caliste, L Genovese, T Deutsch, ... The Journal of chemical physics 135 (3), 034102, 2011 | 88 | 2011 |
Band gap engineering via edge-functionalization of graphene nanoribbons P Wagner, CP Ewels, JJ Adjizian, L Magaud, P Pochet, S Roche, ... The Journal of Physical Chemistry C 117 (50), 26790-26796, 2013 | 75 | 2013 |
Point defect engineering strategies to suppress A-center formation in silicon A Chroneos, CA Londos, EN Sgourou, P Pochet Applied Physics Letters 99 (24), 241901, 2011 | 75 | 2011 |
The activation-relaxation technique: ART nouveau and kinetic ART N Mousseau, LK Béland, P Brommer, JF Joly, F El-Mellouhi, ... Journal of Atomic and Molecular Physics 2012, 2012 | 69 | 2012 |
Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si EN Sgourou, D Timerkaeva, CA Londos, D Aliprantis, A Chroneos, ... Journal of Applied Physics 113 (11), 113506, 2013 | 64 | 2013 |
Nitrogen implantation of suspended graphene flakes: Annealing effects and selectivity of sp2 nitrogen species M Scardamaglia, B Aleman, M Amati, C Ewels, P Pochet, N Reckinger, ... Carbon 73, 371-381, 2014 | 62 | 2014 |
Control of magnetic properties of epitaxial MnGeC films induced by carbon doping A Spiesser, I Slipukhina, MT Dau, E Arras, V Le Thanh, L Michez, ... Physical Review B 84 (16), 165203, 2011 | 62 | 2011 |
Vacancy-assisted diffusion in silicon: A three-temperature-regime model D Caliste, P Pochet Physical review letters 97 (13), 135901, 2006 | 56 | 2006 |
Simulation of the enhanced Curie temperature in compounds I Slipukhina, E Arras, P Mavropoulos, P Pochet Applied Physics Letters 94 (19), 192505, 2009 | 54 | 2009 |
Phase diagram, structure, and magnetic properties of the Ge-Mn system: A first-principles study E Arras, D Caliste, T Deutsch, F Lançon, P Pochet Physical Review B 83 (17), 174103, 2011 | 52 | 2011 |
Strain relaxation in CVD graphene: wrinkling with shear lag MS Bronsgeest, N Bendiab, S Mathur, A Kimouche, HT Johnson, ... Nano letters 15 (8), 5098-5104, 2015 | 48 | 2015 |
Low-energy boron fullerenes: Role of disorder and potential synthesis pathways P Pochet, L Genovese, S De, S Goedecker, D Caliste, SA Ghasemi, K Bao, ... Physical Review B 83 (8), 081403, 2011 | 39 | 2011 |
Germanium diffusion mechanisms in silicon from first principles D Caliste, P Pochet, T Deutsch, F Lançon Physical Review B 75 (12), 125203, 2007 | 39 | 2007 |
First-principles prediction of stable SiC cage structures and their synthesis pathways P Pochet, L Genovese, D Caliste, I Rousseau, S Goedecker, T Deutsch Physical Review B 82 (3), 035431, 2010 | 38 | 2010 |
Modeling of aging in plutonium by molecular dynamics P Pochet Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003 | 34 | 2003 |
Selecting boron fullerenes by cage-doping mechanisms P Boulanger, M Morinière, L Genovese, P Pochet The Journal of chemical physics 138 (18), 184302, 2013 | 33 | 2013 |
Tunable magnetic states in hexagonal boron nitride sheets E Machado-Charry, P Boulanger, L Genovese, N Mousseau, P Pochet Applied Physics Letters 101 (13), 132405, 2012 | 33 | 2012 |
Atomic structure of mn-rich nanocolumns probed by x-ray absorption spectroscopy M Rovezzi, T Devillers, E Arras, F d’Acapito, A Barski, M Jamet, P Pochet Applied Physics Letters 92 (24), 242510, 2008 | 31 | 2008 |