Katherina Babich
Katherina Babich
Deputy Director, Globalfoundries NY USA
Verified email at globalfoundries.com
Title
Cited by
Cited by
Year
Multilayer interconnect structure containing air gaps and method for making
KE Babich, RA Carruthers, TJ Dalton, A Grill, JC Hedrick, CV Jahnes, ...
US Patent 6,815,329, 2004
1472004
Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
M Angelopoulos, K Babich, A Grill, SD Halle, AP Mahorowala, VV Patel
US Patent 6,316,167, 2001
1122001
Antireflective SiO-containing compositions for hardmask layer
D Pfeiffer, M Angelopoulos, K Babich, P Brock, W Huang, AP Mahorowala, ...
US Patent 6,730,454, 2004
1042004
FinFET performance advantage at 22nm: An AC perspective
M Guillorn, J Chang, A Bryant, N Fuller, O Dokumaci, X Wang, J Newbury, ...
2008 Symposium on VLSI Technology, 12-13, 2008
992008
Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof
M Angelopoulos, K Babich, A Grill, SD Halle, AP Mahorowala, VV Patel
US Patent 6,514,667, 2003
902003
Tunable and removable plasma deposited antireflective coatings
KE Babich, AC Callegari, J Fontaine, A Grill, CV Jahnes, VV Patel
US Patent 6,428,894, 2002
902002
Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
H Kawasaki, M Khater, M Guillorn, N Fuller, J Chang, S Kanakasabapathy, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
742008
Multilayer interconnect structure containing air gaps and method for making
KE Babich, RA Carruthers, TJ Dalton, A Grill, JC Hedrick, CV Jahnes, ...
US Patent 7,098,476, 2006
702006
Investigation of FinFET devices for 32nm technologies and beyond
H Shang, L Chang, X Wang, M Rooks, Y Zhang, B To, K Babich, G Totir, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 54-55, 2006
702006
SrHfO3 as gate dielectric for future CMOS technology
C Rossel, M Sousa, C Marchiori, J Fompeyrine, D Webb, D Caimi, ...
Microelectronic engineering 84 (9-10), 1869-1873, 2007
692007
Optical properties of epitaxial thin films grown on Si
M Sousa, C Rossel, C Marchiori, H Siegwart, D Caimi, JP Locquet, ...
Journal of Applied Physics 102 (10), 104103, 2007
612007
Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation
K Babich, A Callegari, SA Cohen, A Grill, CV Jahnes, VV Patel, ...
US Patent 6,448,655, 2002
562002
Silicon containing polymer in applications for 193-nm high-NA lithography processes
S Burns, D Pfeiffer, A Mahorowala, K Petrillo, A Clancy, K Babich, ...
Advances in Resist Technology and Processing XXIII 6153, 61530K, 2006
472006
Multifunctional polymeric materials and use thereof
M Angelopoulos, KE Babich, DR Medeiros, WM Moreau
US Patent 6,686,124, 2004
402004
High-resolution 248-nm bilayer resist
Q Lin, KE Petrillo, K Babich, DC LaTulipe, DR Medeiros, AP Mahorowala, ...
Advances in Resist Technology and Processing XVI 3678, 241-250, 1999
331999
Techniques for patterning features in semiconductor devices
SD Allen, KE Babich, SJ Holmes, AP Mahorowala, D Pfeiffer, RS Wise
US Patent 7,545,041, 2009
312009
Lithographic antireflective hardmask compositions and uses thereof
K Babich, AP Mahorowala, DR Medeiros, D Pfeiffer
US Patent 7,223,517, 2007
312007
Antireflective hardmask and uses thereof
K Babich, E Huang, AP Mahorowala, DR Medeiros, D Pfeiffer, K Temple
US Patent 7,172,849, 2007
312007
Hardmask technology for sub-100-nm lithographic imaging
K Babich, AP Mahorowala, DR Medeiros, D Pfeiffer, KE Petrillo, ...
Advances in Resist Technology and Processing XX 5039, 152-165, 2003
312003
High performance bulk planar 20nm CMOS technology for low power mobile applications
H Shang, S Jain, E Josse, E Alptekin, MH Nam, SW Kim, KH Cho, I Kim, ...
2012 Symposium on VLSI Technology (VLSIT), 129-130, 2012
252012
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