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Abhinandan Borah
Abhinandan Borah
Navitas Semiconductor
Verified email at navitassemi.com
Title
Cited by
Cited by
Year
Transferred via contacts as a platform for ideal two-dimensional transistors
Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ...
Nature Electronics 2 (5), 187-194, 2019
2132019
Dynamical strong coupling and parametric amplification of mechanical modes of graphene drums
JP Mathew, RN Patel, A Borah, R Vijay, MM Deshmukh
Nature nanotechnology 11 (9), 747-751, 2016
1922016
Electrostatics of lateral pn junctions in atomically thin materials
A Nipane, S Jayanti, A Borah, JT Teherani
Journal of Applied Physics 122 (19), 2017
512017
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide
MS Choi, A Nipane, BSY Kim, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ...
Nature Electronics 4 (10), 731-739, 2021
502021
Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene
B Datta, S Dey, A Samanta, H Agarwal, A Borah, K Watanabe, ...
Nature communications 8 (1), 14518, 2017
292017
Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices
A Nipane, MS Choi, PJ Sebastian, K Yao, A Borah, P Deshmukh, Y Jung, ...
ACS Applied Materials & Interfaces 13 (1), 1930-1942, 2020
282020
Low tension graphene drums for electromechanical pressure sensing
RN Patel, JP Mathew, A Borah, MM Deshmukh
2D Materials 3 (1), 011003, 2016
212016
Nanoscale electromechanics to measure thermal conductivity, expansion, and interfacial losses
JP Mathew, R Patel, A Borah, CB Maliakkal, TS Abhilash, MM Deshmukh
Nano letters 15 (11), 7621-7626, 2015
212015
Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant
A Borah, A Nipane, MS Choi, J Hone, JT Teherani
ACS Applied Electronic Materials 3 (7), 2941-2947, 2021
172021
Electrostatic properties simulation of layered 2D material devices
A Borah, PJ Sebastian, JT Teherani
Online]. Available: https://nanohub. org/resources/2dmatstacks, 2018
42018
Achieving high carrier density and high mobility in graphene using monolayer tungsten oxyselenide
MS Choi, A Nipane, B Kim, M Ziffer, I Datta, A Borah, Y Jung, B Kim, ...
22021
Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs
A Nipane, PJ Sebastian, Y Jung, MS Choi, A Borah, WJ Yoo, J Hone, ...
2019 Device Research Conference (DRC), 231-232, 2019
22019
Erratum: “Electrostatics of lateral p-n junctions in atomically thin materials” [J. Appl. Phys. 122, 194501 (2017)]
A Nipane, S Jayanti, A Borah, JT Teherani
Journal of Applied Physics 124 (13), 139902, 2018
22018
An intuitive equivalent circuit model for multilayer van der Waals heterostructures
A Borah, PJ Sebastian, A Nipane, JT Teherani
IEEE Transactions on Electron Devices 65 (10), 4209-4215, 2018
22018
High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide (vol 4, pg 731, 2021)
MS Choi, A Nipane, BSY Kim, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ...
NATURE ELECTRONICS 4 (12), 931-931, 2021
2021
Systems and methods for universal degenerate p-type doping with monolayer tungsten oxyselenide (tos)
J Hone, JT Teherani, AB Nipane, C Minsup, Y Jung, A Borah
US Patent App. 17/236,404, 2021
2021
Electrostatic Modeling and Contact Resistance Engineering in 2D Semiconductor Devices
A Borah
Columbia University, 2021
2021
Reliable High-Quality Metal-Embedded h-BN Contacts to p-type WSe2
Y Jung, MS Chor, A Borah, A Nipane, WJ Yoo, J Hanel, JT Teherani
2018 76th Device Research Conference (DRC), 1-2, 2018
2018
Strong coupling and parametric amplification in mechanical modes of graphene
J Mathew, R Patel, A Borah, R Vijayaraghavan, M Deshmukh
APS March Meeting Abstracts 2016, B52. 005, 2016
2016
Spin and valley resolved Landau level crossing in tri-layer ABA stacked graphene
B Datta, V Gupta, A Borah, K Watanabe, T Taniguchi, M Deshmukh
APS March Meeting Abstracts 2016, A15. 003, 2016
2016
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