Christian Wetzel
Christian Wetzel
Rensselaer Polytechnic Institute
Bestätigte E-Mail-Adresse bei ieee.org - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
T Takeuchi, C Wetzel, S Yamaguchi, H Sakai, H Amano, I Akasaki, ...
Applied physics letters 73 (12), 1691-1693, 1998
7621998
On p‐type doping in GaN—acceptor binding energies
S Fischer, C Wetzel, EE Haller, BK Meyer
Applied physics letters 67 (9), 1298-1300, 1995
3521995
Pressure induced deep gap state of oxygen in GaN
C Wetzel, T Suski, JW Ager III, ER Weber, EE Haller, S Fischer, BK Meyer, ...
Physical review letters 78 (20), 3923, 1997
2941997
Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature …
M Iwaya, T Takeuchi, S Yamaguchi, C Wetzel, H Amano, I Akasaki
Japanese Journal of Applied Physics 37 (3B), L316, 1998
2661998
Optical band gap in Ga1-xInxN (0< x< 0.2) on GaN by photoreflection spectroscopy
C Wetzel, T Takeuchi, S Yamaguchi, H Katoh, H Amano, I Akasaki
Appl. Phys. Lett 73 (14), 1994-6, 1998
235*1998
Optical band gap in Ga1−xInxN (0< x< 0.2) on GaN by photoreflection spectroscopy
C Wetzel, T Takeuchi, S Yamaguchi, H Katoh, H Amano, I Akasaki
Applied physics letters 73 (14), 1994-1996, 1998
2331998
Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire
Y LI, SHI YOU, M ZHU, L ZHAO, W HOU, T DETCHPROHM, ...
Applied Physics Letters 98 (15), 151102, 2011
2302011
Properties, Synthesis, Characterization, and Applications of Gallium Nitride and Related Semiconductors
JH Edgar, S Strite, I Akasaki, H Amano, C Wetzel
INSPEC, IEE, London, UK, (ISBN 0 85296 953 8), 1999
180*1999
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
S Yamaguchi, M Kariya, S Nitta, T Takeuchi, C Wetzel, H Amano, ...
Journal of applied physics 85 (11), 7682-7688, 1999
1531999
Anomalous features in the optical properties of on GaN grown by metal organic vapor phase epitaxy
S Yamaguchi, M Kariya, S Nitta, T Takeuchi, C Wetzel, H Amano, ...
Applied Physics Letters 76 (7), 876-878, 2000
1462000
GaN epitaxial layers grown on 6H‐SiC by the sublimation sandwich technique
C Wetzel, D Volm, BK Meyer, K Pressel, S Nilsson, EN Mokhov, ...
Applied physics letters 65 (8), 1033-1035, 1994
1301994
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
C Wetzel, T Takeuchi, H Amano, I Akasaki
Journal of applied physics 85 (7), 3786-3791, 1999
1221999
Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure
C Wetzel, W Walukiewicz, EE Haller, J Ager III, I Grzegory, S Porowski, ...
Physical Review B 53 (3), 1322, 1996
1161996
Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy
S Yamaguchi, M Kariya, S Nitta, H Kato, T Takeuchi, C Wetzel, H Amano, ...
Journal of crystal growth 195 (1-4), 309-313, 1998
1101998
Control of dislocations and stress in AlGaN on sapphire using a low temperature interlayer
H Amano, M Iwaya, N Hayashi, T Kashima, S Nitta, C Wetzel, I Akasaki
physica status solidi (b) 216 (1), 683-689, 1999
1071999
Green light emitting diodes on -plane GaN bulk substrates
T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ...
Applied Physics Letters 92 (24), 241109, 2008
992008
Dynamics of bound‐exciton luminescences from epitaxial GaN
L Eckey, JC Holst, P Maxim, R Heitz, A Hoffmann, I Broser, BK Meyer, ...
Applied physics letters 68 (3), 415-417, 1996
951996
growth optimization for high-power green light-emitting diodes
C Wetzel, T Salagaj, T Detchprohm, P Li, JS Nelson
Applied physics letters 85 (6), 866-868, 2004
942004
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in …
Z Li, J Waldron, T Detchprohm, C Wetzel, RF Karlicek Jr, TP Chow
Applied Physics Letters 102 (19), 192107, 2013
922013
Strongly localized excitons in gallium nitride
C Wetzel, S Fischer, J Krüger, EE Haller, RJ Molnar, TD Moustakas, ...
Applied physics letters 68 (18), 2556-2558, 1996
921996
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