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Alessandro Bernardi
Alessandro Bernardi
Universitat Autonoma de Barcelona
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Zitiert von
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Jahr
Electronic nature of the enhanced conductivity in YSZ-STO multilayers deposited by PLD
A Cavallaro, M Burriel, J Roqueta, A Apostolidis, A Bernardi, A Tarancón, ...
Solid State Ionics 181 (13-14), 592-601, 2010
1252010
On-chip Si/SiOx microtube refractometer
A Bernardi, S Kiravittaya, A Rastelli, R Songmuang, DJ Thurmer, ...
Applied Physics Letters 93 (9), 2008
1212008
Composition dependence of the phonon strain shift coefficients of SiGe alloys revisited
JS Reparaz, A Bernardi, AR Goñi, MI Alonso, M Garriga
Applied Physics Letters 92 (8), 2008
722008
Cross-plane thermal conductivity reduction of vertically uncorrelated Ge∕ Si quantum dot superlattices
J Alvarez-Quintana, X Alvarez, J Rodriguez-Viejo, D Jou, ...
Applied physics letters 93 (1), 2008
432008
Probing residual strain in InGaAs∕ GaAs micro-origami tubes by micro-Raman spectroscopy
A Bernardi, AR Goni, MI Alonso, F Alsina, H Scheel, PO Vaccaro, N Saito
Journal of applied physics 99 (6), 2006
372006
Phonon pressure coefficient as a probe of the strain status of self-assembled quantum dots
JS Reparaz, A Bernardi, AR Goñi, PD Lacharmoise, MI Alonso, M Garriga, ...
Applied Physics Letters 91 (8), 2007
212007
Radiografía de los micro-influencers en la economía de las plataformas digitales: Insatisfacción, trabajo gratuito y desigualdad en la retribución
IV Simón, CF Rovira, SG Luque, A Bernardi
Revista latina de comunicación social, 21, 2022
202022
Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers
A Bernardi, MI Alonso, AR Goñi, JO Ossó, M Garriga
Applied physics letters 89 (10), 2006
202006
Site-controlled growth of Ge nanostructures on Si (100) via pulsed laser deposition nanostenciling
CV Cojocaru, A Bernardi, JS Reparaz, MI Alonso, JM MacLeod, ...
Applied Physics Letters 91 (11), 2007
192007
Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: a strategy for tuning island density
A Bernardi, JO Ossó, MI Alonso, AR Goñi, M Garriga
Nanotechnology 17 (10), 2602, 2006
192006
Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies
A Bernardi, MI Alonso, JS Reparaz, AR Goni, PD Lacharmoise, JO Osso, ...
Nanotechnology 18 (47), 475401, 2007
172007
A systematic study of the chemical etching process on periodically poled lithium niobate structures
N Argiolas, M Bazzan, A Bernardi, E Cattaruzza, P Mazzoldi, P Schiavuta, ...
Materials Science and Engineering: B 118 (1-3), 150-154, 2005
172005
Nanocalorimetric high-temperature characterization of ultrathin films of a-Ge
AF Lopeandía, E Leon-Gutierrez, G Garcia, F Pi, A Bernardi, AR Goñi, ...
Materials science in semiconductor processing 9 (4-5), 806-811, 2006
152006
Raman scattering interferences as a probe of vertical coherence in multilayers of carbon-induced Ge quantum dots
PD Lacharmoise, A Bernardi, AR Goni, MI Alonso, M Garriga, ...
Physical Review B—Condensed Matter and Materials Physics 76 (15), 155311, 2007
142007
Ellipsometric study of crystallization of amorphous Ge thin films embedded in SiO2
MI Alonso, M Garriga, A Bernardi, AR Goni, AF Lopeandia, G Garcia, ...
Thin Solid Films 516 (12), 4277-4281, 2008
122008
Topographic investigation of ferroelectric domain structures in periodically-poled lithium niobate crystals by a profilometer
M Bazzan, N Argiolas, A Bernardi, P Mazzoldi, C Sada
Materials characterization 51 (2-3), 177-183, 2003
112003
Measurement of phonon pressure coefficients for a precise determination of deformation potentials in SiGe alloys
JS Reparaz, AR Goni, A Bernardi, MI Alonso, M Garriga
physica status solidi (b) 246 (3), 548-552, 2009
102009
Crystallisation of amorphous germanium thin films
G Garcia, AF Lopeandia, A Bernardi, MI Alonso, AR Goni, JL Labar, ...
Journal of Nanoscience and Nanotechnology 9 (5), 3013-3019, 2009
92009
Modified Stranski–Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition
JM MacLeod, CV Cojocaru, F Ratto, C Harnagea, A Bernardi, MI Alonso, ...
Nanotechnology 23 (6), 065603, 2012
72012
Ellipsometric measurements of quantum confinement effects on higher interband transitions of Ge nanocrystals
MI Alonso, M Garriga, A Bernardi, AR Goni, AF Lopeandia, G Garcia, ...
physica status solidi (a) 205 (4), 888-891, 2008
52008
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