Duu-Sheng Ong
Duu-Sheng Ong
Multimedia University, University Malaya, University of Sheffield, Technical University of Darmstadt
Bestätigte E-Mail-Adresse bei mmu.edu.my - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes
KF Li, DS Ong, JPR David, GJ Rees, RC Tozer, PN Robson, R Grey
IEEE Transactions on Electron Devices 45 (10), 2102-2107, 1998
1451998
A Monte Carlo investigation of multiplication noise in thin p/sup+/-in/sup+/GaAs avalanche photodiodes
DS Ong, KF Li, GJ Rees, GM Dunn, JPR David, PN Robson
IEEE Transactions on Electron Devices 45 (8), 1804-1810, 1998
941998
A simple model to determine multiplication and noise in avalanche photodiodes
DS Ong, KF Li, GJ Rees, JPR David, PN Robson
Journal of applied physics 83 (6), 3426-3428, 1998
791998
A simple model for avalanche multiplication including deadspace effects
SA Plimmer, JPR David, DS Ong, KF Li
IEEE Transactions on Electron Devices 46 (4), 769-775, 1999
611999
Effect of dead space on avalanche speed [APDs]
JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
512002
Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs diodes
DS Ong, KF Li, SA Plimmer, GJ Rees, JPR David, PN Robson
Journal of Applied Physics 87 (11), 7885-7891, 2000
502000
The merits and limitations of local impact ionization theory [APDs]
SA Plimmer, JPR David, DS Ong
IEEE Transactions on Electron Devices 47 (5), 1080-1088, 2000
292000
Analytical band Monte Carlo simulation of electron impact ionization in
KY Choo, DS Ong
Journal of applied physics 96 (10), 5649-5653, 2004
242004
Low excess noise characteristics in thin avalanche region GaAs diodes
KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, PN Robson, R Grey
Electronics Letters 34 (1), 125-126, 1998
241998
Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations
S Vainshtein, V Yuferev, V Palankovski, DS Ong, J Kostamovaara
Applied Physics Letters 92 (6), 062114, 2008
232008
Avalanche speed in thin avalanche photodiodes
DS Ong, GJ Rees, JPR David
Journal of applied physics 93 (7), 4232-4239, 2003
222003
Avalanche noise characteristics of thin GaAs structures with distributed carrier generation
KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, SA Plimmer, KY Chang, ...
IEEE Transactions on Electron Devices 47 (5), 910-914, 2000
202000
Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes
C Groves, JPR David, GJ Rees, DS Ong
Journal of applied physics 95 (11), 6245-6251, 2004
172004
Noise and reliability measurement of a three-axis micro-accelerometer
F Mohd-Yasin, N Zaiyadi, DJ Nagel, DS Ong, CE Korman, AR Faidz
Microelectronic engineering 86 (4-6), 991-995, 2009
142009
Low frequency noise measurement and analysis of capacitive micro-accelerometers
F Mohd-Yasin, DJ Nagel, DS Ong, CE Korman, HT Chuah
Microelectronic engineering 84 (5-8), 1788-1791, 2007
142007
Resonant tunneling and quantum cascading for optimum room-temperature generation of THz signals
VP Sirkeli, O Yilmazoglu, DS Ong, S Preu, F Küppers, HL Hartnagel
IEEE Transactions on Electron Devices 64 (8), 3482-3488, 2017
122017
Modeling anomalous charge carrier transport in disordered organic semiconductors using the fractional drift-diffusion equation
KY Choo, SV Muniandy, KL Woon, MT Gan, DS Ong
Organic Electronics 41, 157-165, 2017
122017
Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
SL Tan, DS Ong, HK Yow
Journal of Applied Physics 102 (4), 044506, 2007
122007
Generation of THz signals based on quasi-ballistic electron reflections in double-heterojunction structures
DS Ong, HL Hartnagel
Semiconductor science and technology 22 (9), 981, 2007
122007
Monte Carlo estimation of avalanche noise in thin GaAs diodes
DS Ong, KF Li, GJ Rees, JPR David, PN Robson, GM Dunn
Applied physics letters 72 (2), 232-234, 1998
121998
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