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Duu-Sheng Ong 王笃生
Duu-Sheng Ong 王笃生
Multimedia University, University Malaya, University of Sheffield, Technical University of Darmstadt
Bestätigte E-Mail-Adresse bei mmu.edu.my - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes
KF Li, DS Ong, JPR David, GJ Rees, RC Tozer, PN Robson, R Grey
IEEE Transactions on Electron Devices 45 (10), 2102-2107, 1998
1611998
A simple model to determine multiplication and noise in avalanche photodiodes
DS Ong, KF Li, GJ Rees, JPR David, PN Robson
Journal of applied physics 83 (6), 3426-3428, 1998
1081998
A Monte Carlo investigation of multiplication noise in thin p/sup+/-in/sup+/GaAs avalanche photodiodes
DS Ong, KF Li, GJ Rees, GM Dunn, JPR David, PN Robson
IEEE Transactions on Electron Devices 45 (8), 1804-1810, 1998
1031998
A simple model for avalanche multiplication including deadspace effects
SA Plimmer, JPR David, DS Ong, KF Li
IEEE Transactions on Electron Devices 46 (4), 769-775, 1999
731999
Effect of dead space on avalanche speed [APDs]
JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
582002
Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs diodes
DS Ong, KF Li, SA Plimmer, GJ Rees, JPR David, PN Robson
Journal of Applied Physics 87 (11), 7885-7891, 2000
542000
The merits and limitations of local impact ionization theory [APDs]
SA Plimmer, JPR David, DS Ong
IEEE Transactions on Electron Devices 47 (5), 1080-1088, 2000
352000
First-principles studies on the superconductivity of aluminene
KH Yeoh, TL Yoon, DS Ong, TL Lim
Applied Surface Science 445, 161-166, 2018
332018
Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations
S Vainshtein, V Yuferev, V Palankovski, DS Ong, J Kostamovaara
Applied Physics Letters 92 (6), 2008
322008
Avalanche speed in thin avalanche photodiodes
DS Ong, GJ Rees, JPR David
Journal of applied physics 93 (7), 4232-4239, 2003
262003
Low excess noise characteristics in thin avalanche region GaAs diodes
KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, PN Robson, R Grey
Electronics Letters 34 (1), 125-126, 1998
261998
Modeling anomalous charge carrier transport in disordered organic semiconductors using the fractional drift-diffusion equation
KY Choo, SV Muniandy, KL Woon, MT Gan, DS Ong
Organic Electronics 41, 157-165, 2017
252017
Analytical band Monte Carlo simulation of electron impact ionization in In0. 53Ga0. 47As
KY Choo, DS Ong
Journal of applied physics 96 (10), 5649-5653, 2004
252004
First-principles study of monolayer Be2C as an anode material for lithium-ion batteries
KH Yeoh, KH Chew, YZ Chu, TL Yoon, R Rusi, DS Ong
Journal of Applied Physics 126 (12), 2019
232019
Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs]
KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, SA Plimmer, KY Chang, ...
IEEE transactions on electron devices 47 (5), 910-914, 2000
232000
Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes
SL Tan, DS Ong, HK Yow
Journal of Applied Physics 102 (4), 2007
222007
Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects
KH Yeoh, KH Chew, TL Yoon, R Rusi, DS Ong
Journal of Applied Physics 127 (1), 2020
212020
Noise and reliability measurement of a three-axis micro-accelerometer
F Mohd-Yasin, N Zaiyadi, DJ Nagel, DS Ong, CE Korman, AR Faidz
Microelectronic engineering 86 (4-6), 991-995, 2009
212009
Resonant tunneling and quantum cascading for optimum room-temperature generation of THz signals
VP Sirkeli, O Yilmazoglu, DS Ong, S Preu, F Küppers, HL Hartnagel
IEEE Transactions on Electron Devices 64 (8), 3482-3488, 2017
202017
Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes
C Groves, JPR David, GJ Rees, DS Ong
Journal of applied physics 95 (11), 6245-6251, 2004
202004
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