Avalanche multiplication noise characteristics in thin GaAs p/sup+/-in/sup+/diodes KF Li, DS Ong, JPR David, GJ Rees, RC Tozer, PN Robson, R Grey IEEE Transactions on Electron Devices 45 (10), 2102-2107, 1998 | 149 | 1998 |

A Monte Carlo investigation of multiplication noise in thin p/sup+/-in/sup+/GaAs avalanche photodiodes DS Ong, KF Li, GJ Rees, GM Dunn, JPR David, PN Robson IEEE Transactions on Electron Devices 45 (8), 1804-1810, 1998 | 94 | 1998 |

A simple model to determine multiplication and noise in avalanche photodiodes DS Ong, KF Li, GJ Rees, JPR David, PN Robson Journal of applied physics 83 (6), 3426-3428, 1998 | 85 | 1998 |

A simple model for avalanche multiplication including deadspace effects SA Plimmer, JPR David, DS Ong, KF Li IEEE Transactions on Electron Devices 46 (4), 769-775, 1999 | 64 | 1999 |

Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ... IEEE Transactions on Electron Devices 49 (4), 544-549, 2002 | 54 | 2002 |

Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs diodes DS Ong, KF Li, SA Plimmer, GJ Rees, JPR David, PN Robson Journal of Applied Physics 87 (11), 7885-7891, 2000 | 52 | 2000 |

The merits and limitations of local impact ionization theory [APDs] SA Plimmer, JPR David, DS Ong IEEE Transactions on Electron Devices 47 (5), 1080-1088, 2000 | 29 | 2000 |

Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations S Vainshtein, V Yuferev, V Palankovski, DS Ong, J Kostamovaara Applied Physics Letters 92 (6), 062114, 2008 | 24 | 2008 |

Analytical band Monte Carlo simulation of electron impact ionization in KY Choo, DS Ong Journal of applied physics 96 (10), 5649-5653, 2004 | 24 | 2004 |

Low excess noise characteristics in thin avalanche region GaAs diodes KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, PN Robson, R Grey Electronics Letters 34 (1), 125-126, 1998 | 24 | 1998 |

Avalanche speed in thin avalanche photodiodes DS Ong, GJ Rees, JPR David Journal of applied physics 93 (7), 4232-4239, 2003 | 22 | 2003 |

Avalanche noise characteristics of thin GaAs structures with distributed carrier generation KF Li, DS Ong, JPR David, RC Tozer, GJ Rees, SA Plimmer, KY Chang, ... IEEE transactions on electron devices 47 (5), 910-914, 2000 | 21 | 2000 |

Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes C Groves, JPR David, GJ Rees, DS Ong Journal of applied physics 95 (11), 6245-6251, 2004 | 17 | 2004 |

Noise and reliability measurement of a three-axis micro-accelerometer F Mohd-Yasin, N Zaiyadi, DJ Nagel, DS Ong, CE Korman, AR Faidz Microelectronic engineering 86 (4-6), 991-995, 2009 | 16 | 2009 |

Low frequency noise measurement and analysis of capacitive micro-accelerometers F Mohd-Yasin, DJ Nagel, DS Ong, CE Korman, HT Chuah Microelectronic engineering 84 (5-8), 1788-1791, 2007 | 15 | 2007 |

Resonant tunneling and quantum cascading for optimum room-temperature generation of THz signals VP Sirkeli, O Yilmazoglu, DS Ong, S Preu, F Kueppers, HL Hartnagel IEEE Transactions on Electron Devices 64 (8), 3482-3488, 2017 | 14 | 2017 |

Modeling anomalous charge carrier transport in disordered organic semiconductors using the fractional drift-diffusion equation KY Choo, SV Muniandy, KL Woon, MT Gan, DS Ong Organic Electronics 41, 157-165, 2017 | 14 | 2017 |

First-principles studies on the superconductivity of aluminene KH Yeoh, TL Yoon, DS Ong, TL Lim Applied Surface Science 445, 161-166, 2018 | 13 | 2018 |

Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes SL Tan, DS Ong, HK Yow Journal of Applied Physics 102 (4), 044506, 2007 | 12 | 2007 |

Generation of THz signals based on quasi-ballistic electron reflections in double-heterojunction structures DS Ong, HL Hartnagel Semiconductor science and technology 22 (9), 981, 2007 | 12 | 2007 |