zhigang ji
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Real-time deep reinforcement learning based vehicle navigation
S Koh, B Zhou, H Fang, P Yang, Z Yang, Q Yang, L Guan, Z Ji
Applied Soft Computing 96, 106694, 2020
Giant ferroelectric resistance switching controlled by a modulatory terminal for low‐power neuromorphic in‐memory computing
F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ...
Advanced Materials 33 (21), 2008709, 2021
NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement
Z Ji, L Lin, JF Zhang, B Kaczer, G Groeseneken
IEEE Transactions on Electron Devices 57 (1), 228-237, 2009
Real Vth instability of pMOSFETs under practical operation conditions
JF Zhang, Z Ji, MH Chang, B Kaczer, G Groeseneken
2007 IEEE International Electron Devices Meeting, 817-820, 2007
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ...
IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013
An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques
Z Ji, JF Zhang, MH Chang, B Kaczer, G Groeseneken
IEEE Transactions on Electron Devices 56 (5), 1086-1093, 2009
A single pulse charge pumping technique for fast measurements of interface states
L Lin, Z Ji, JF Zhang, WD Zhang, B Kaczer, S De Gendt, G Groeseneken
IEEE Transactions on Electron Devices 58 (5), 1490-1498, 2011
High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3
XX Li, G Zeng, YC Li, H Zhang, ZG Ji, YG Yang, M Luo, WD Hu, ...
npj Flexible Electronics 6 (1), 47, 2022
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
R Gao, AB Manut, Z Ji, J Ma, M Duan, JF Zhang, J Franco, SWM Hatta, ...
IEEE Transactions on Electron Devices 64 (4), 1467-1473, 2017
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
J Franco, B Kaczer, N Waldron, PJ Roussel, A Alian, MA Pourghaderi, Z Ji, ...
2014 IEEE International Electron Devices Meeting, 20.2. 1-20.2. 4, 2014
Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory
X Li, JG Yang, HP Ma, YH Liu, ZG Ji, W Huang, X Ou, DW Zhang, HL Lu
ACS applied materials & interfaces 12 (27), 30538-30547, 2020
A low-power and high-speed True Random Number Generator using generated RTN
J Brown, R Gao, Z Ji, J Chen, J Wu, J Zhang, B Zhou, Q Shi, J Crowford, ...
2018 IEEE Symposium on VLSI Technology, 95-96, 2018
Dominant layer for stress-induced positive charges in Hf-based gate stacks
JF Zhang, MH Chang, Z Ji, L Lin, I Ferain, G Groeseneken, L Pantisano, ...
IEEE electron device letters 29 (12), 1360-1363, 2008
Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition
J Kang, Z Yu, L Wu, Y Fang, Z Wang, Y Cai, Z Ji, J Zhang, R Wang, ...
2017 IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2017
Origins and implications of increased channel hot carrier variability in nFinFETs
B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ...
2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015
New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation
M Duan, JF Zhang, Z Ji, WD Zhang, B Kaczer, T Schram, R Ritzenthaler, ...
IEEE transactions on electron devices 60 (8), 2505-2511, 2013
Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-Ga2O3 Nanobelt Field-Effect Transistors
JX Chen, XX Li, HP Ma, W Huang, ZG Ji, C Xia, HL Lu, DW Zhang
ACS applied materials & interfaces 11 (35), 32127-32134, 2019
Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities
Z Ji, H Chen, X Li
Science China. Information Sciences 62 (12), 226401, 2019
Negative bias temperature instability lifetime prediction: Problems and solutions
Z Ji, S Hatta, JF Zhang, JG Ma, W Zhang, N Soin, B Kaczer, S De Gendt, ...
2013 IEEE International Electron Devices Meeting, 15.6. 1-15.6. 4, 2013
Defect loss: A new concept for reliability of MOSFETs
M Duan, JF Zhang, Z Ji, W Zhang, B Kaczer, S De Gendt, G Groeseneken
IEEE electron device letters 33 (4), 480-482, 2012
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