| Real-time deep reinforcement learning based vehicle navigation S Koh, B Zhou, H Fang, P Yang, Z Yang, Q Yang, L Guan, Z Ji Applied Soft Computing 96, 106694, 2020 | 103 | 2020 |
| Giant ferroelectric resistance switching controlled by a modulatory terminal for low‐power neuromorphic in‐memory computing F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ... Advanced Materials 33 (21), 2008709, 2021 | 93 | 2021 |
| NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement Z Ji, L Lin, JF Zhang, B Kaczer, G Groeseneken IEEE Transactions on Electron Devices 57 (1), 228-237, 2009 | 69 | 2009 |
| High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3 XX Li, G Zeng, YC Li, H Zhang, ZG Ji, YG Yang, M Luo, WD Hu, ... npj Flexible Electronics 6 (1), 47, 2022 | 63 | 2022 |
| Real Vth instability of pMOSFETs under practical operation conditions JF Zhang, Z Ji, MH Chang, B Kaczer, G Groeseneken 2007 IEEE International Electron Devices Meeting, 817-820, 2007 | 61 | 2007 |
| Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ... IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013 | 56 | 2013 |
| An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques Z Ji, JF Zhang, MH Chang, B Kaczer, G Groeseneken IEEE Transactions on Electron Devices 56 (5), 1086-1093, 2009 | 55 | 2009 |
| A single pulse charge pumping technique for fast measurements of interface states L Lin, Z Ji, JF Zhang, WD Zhang, B Kaczer, S De Gendt, G Groeseneken IEEE transactions on electron devices 58 (5), 1490-1498, 2011 | 54 | 2011 |
| Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory X Li, JG Yang, HP Ma, YH Liu, ZG Ji, W Huang, X Ou, DW Zhang, HL Lu ACS applied materials & interfaces 12 (27), 30538-30547, 2020 | 49 | 2020 |
| RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs J Franco, B Kaczer, N Waldron, PJ Roussel, A Alian, MA Pourghaderi, Z Ji, ... 2014 IEEE International Electron Devices Meeting, 20.2. 1-20.2. 4, 2014 | 48 | 2014 |
| Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation R Gao, AB Manut, Z Ji, J Ma, M Duan, JF Zhang, J Franco, SWM Hatta, ... IEEE Transactions on Electron Devices 64 (4), 1467-1473, 2017 | 47 | 2017 |
| A low-power and high-speed True Random Number Generator using generated RTN J Brown, R Gao, Z Ji, J Chen, J Wu, J Zhang, B Zhou, Q Shi, J Crowford, ... 2018 IEEE symposium on VLSI technology, 95-96, 2018 | 45 | 2018 |
| Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition J Kang, Z Yu, L Wu, Y Fang, Z Wang, Y Cai, Z Ji, J Zhang, R Wang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2017 | 42 | 2017 |
| Dominant layer for stress-induced positive charges in Hf-based gate stacks JF Zhang, MH Chang, Z Ji, L Lin, I Ferain, G Groeseneken, L Pantisano, ... IEEE electron device letters 29 (12), 1360-1363, 2008 | 42 | 2008 |
| Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities Z Ji, H Chen, X Li Science China. Information Sciences 62 (12), 226401, 2019 | 41 | 2019 |
| Origins and implications of increased channel hot carrier variability in nFinFETs B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ... 2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015 | 41 | 2015 |
| New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation M Duan, JF Zhang, Z Ji, WD Zhang, B Kaczer, T Schram, R Ritzenthaler, ... IEEE transactions on electron devices 60 (8), 2505-2511, 2013 | 40 | 2013 |
| Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to β-Ga2O3 Nanobelt Field-Effect Transistors JX Chen, XX Li, HP Ma, W Huang, ZG Ji, C Xia, HL Lu, DW Zhang ACS applied materials & interfaces 11 (35), 32127-32134, 2019 | 38 | 2019 |
| Negative bias temperature instability lifetime prediction: Problems and solutions Z Ji, S Hatta, JF Zhang, JG Ma, W Zhang, N Soin, B Kaczer, S De Gendt, ... 2013 IEEE International Electron Devices Meeting, 15.6. 1-15.6. 4, 2013 | 38 | 2013 |
| Defect loss: A new concept for reliability of MOSFETs M Duan, JF Zhang, Z Ji, W Zhang, B Kaczer, S De Gendt, G Groeseneken IEEE electron device letters 33 (4), 480-482, 2012 | 35 | 2012 |
Weidong ZhangSamsung Research AmericaVerified email at samsung.com
