Siyuan Zhang
Title
Cited by
Cited by
Year
Piezoelectric coefficients and spontaneous polarization of ScAlN
MA Caro, S Zhang, T Riekkinen, M Ylilammi, MA Moram, ...
Journal of Physics: Condensed Matter 27 (24), 245901, 2015
1032015
Microstructure evolution and deformation behavior of ultrafine-grained Al–Zn–Mg alloys with fine η′ precipitates
S Zhang, W Hu, R Berghammer, G Gottstein
Acta Materialia 58 (20), 6695-6705, 2010
702010
Atomic-scale insights into surface species of electrocatalysts in three dimensions
T Li, O Kasian, S Cherevko, S Zhang, S Geiger, C Scheu, P Felfer, ...
Nature Catalysis 1 (4), 300-305, 2018
662018
Simultaneous optimization of electrical and thermal transport properties of Bi0.5Sb1.5Te3 thermoelectric alloy by twin boundary engineering
Y Yu, DS He, S Zhang, O Cojocaru-Mirédin, T Schwarz, A Stoffers, ...
Nano Energy 37, 203-213, 2017
632017
Elastic constants and critical thicknesses of ScGaN and ScAlN
S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram
Journal of Applied Physics 114 (24), 243516, 2013
612013
ScGaN and ScAlN: emerging nitride materials
MA Moram, S Zhang
Journal of Materials Chemistry A 2 (17), 6042-6050, 2014
542014
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram
Journal of Applied Physics 114 (13), 133510, 2013
532013
Mg Doping Affects Dislocation Core Structures in GaN
SK Rhode, MK Horton, MJ Kappers, S Zhang, CJ Humphreys, RO Dusane, ...
Physical review letters 111 (2), 025502, 2013
432013
Mo-doped BiVO 4 thin films–high photoelectrochemical water splitting performance achieved by a tailored structure and morphology
M Rohloff, B Anke, S Zhang, U Gernert, C Scheu, M Lerch, A Fischer
Sustainable Energy & Fuels 1 (8), 1830-1846, 2017
312017
Photoelectrochemical water splitting strongly enhanced in fast-grown ZnO nanotree and nanocluster structures
X Ren, A Sangle, S Zhang, S Yuan, Y Zhao, L Shi, RLZ Hoye, S Cho, D Li, ...
Journal of Materials Chemistry A 4 (26), 10203-10211, 2016
302016
Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping
JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ...
Nano letters 15 (11), 7639-7643, 2015
282015
The dissociation of the [a+ c] dislocation in GaN
PB Hirsch, JG Lozano, S Rhode, MK Horton, MA Moram, S Zhang, ...
Philosophical Magazine 93 (28-30), 3925-3938, 2013
282013
Ag-segregation to dislocations in PbTe-based thermoelectric materials
Y Yu, S Zhang, AM Mio, B Gault, A Sheskin, C Scheu, D Raabe, F Zu, ...
ACS applied materials & interfaces 10 (4), 3609-3615, 2018
262018
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ...
Ultramicroscopy 176, 93-98, 2017
232017
Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride
JG Lozano, H Yang, MP Guerrero-Lebrero, AJ D’Alfonso, A Yasuhara, ...
Physical review letters 113 (13), 135503, 2014
232014
The microstructure of non-polar a-plane (112¯ 0) InGaN quantum wells
JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ...
Journal of Applied Physics 119 (17), 175703, 2016
222016
Ti and its alloys as examples of cryogenic focused ion beam milling of environmentally-sensitive materials
Y Chang, W Lu, J Guénolé, LT Stephenson, A Szczpaniak, P Kontis, ...
Nature communications 10 (1), 1-10, 2019
202019
Why Tin‐Doping Enhances the Efficiency of Hematite Photoanodes for Water Splitting—The Full Picture
AG Hufnagel, H Hajiyani, S Zhang, T Li, O Kasian, B Gault, B Breitbach, ...
Advanced Functional Materials 28 (52), 1804472, 2018
202018
Evaluation of EELS spectrum imaging data by spectral components and factors from multivariate analysis
S Zhang, C Scheu
Microscopy 67 (suppl_1), i133-i141, 2018
202018
Role of Nanostructuring and Microstructuring in Silver Antimony Telluride Compounds for Thermoelectric Applications
O Cojocaru-Mirédin, L Abdellaoui, M Nagli, S Zhang, Y Yu, C Scheu, ...
ACS Applied Materials & Interfaces 9 (17), 14779-14790, 2017
182017
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