| Piezoelectric coefficients and spontaneous polarization of ScAlN MA Caro, S Zhang, T Riekkinen, M Ylilammi, MA Moram, ... Journal of Physics: Condensed Matter 27 (24), 245901, 2015 | 206 | 2015 |
| Simultaneous optimization of electrical and thermal transport properties of Bi0.5Sb1.5Te3 thermoelectric alloy by twin boundary engineering Y Yu, DS He, S Zhang, O Cojocaru-Mirédin, T Schwarz, A Stoffers, ... Nano Energy 37, 203-213, 2017 | 131 | 2017 |
| Atomic-scale insights into surface species of electrocatalysts in three dimensions T Li, O Kasian, S Cherevko, S Zhang, S Geiger, C Scheu, P Felfer, ... Nature Catalysis 1 (4), 300-305, 2018 | 127 | 2018 |
| Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram Journal of Applied Physics 114 (13), 133510, 2013 | 102 | 2013 |
| Degradation of iridium oxides via oxygen evolution from the lattice: correlating atomic scale structure with reaction mechanisms O Kasian, S Geiger, T Li, JP Grote, K Schweinar, S Zhang, C Scheu, ... Energy & Environmental Science 12 (12), 3548-3555, 2019 | 96 | 2019 |
| Elastic constants and critical thicknesses of ScGaN and ScAlN S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram Journal of Applied Physics 114 (24), 243516, 2013 | 87 | 2013 |
| Microstructure evolution and deformation behavior of ultrafine-grained Al–Zn–Mg alloys with fine η′ precipitates S Zhang, W Hu, R Berghammer, G Gottstein Acta Materialia 58 (20), 6695-6705, 2010 | 86 | 2010 |
| ScGaN and ScAlN: emerging nitride materials MA Moram, S Zhang Journal of Materials Chemistry A 2 (17), 6042-6050, 2014 | 81 | 2014 |
| Rational strain engineering in delafossite oxides for highly efficient hydrogen evolution catalysis in acidic media F Podjaski, D Weber, S Zhang, L Diehl, R Eger, V Duppel, ... Nature Catalysis 3 (1), 55-63, 2020 | 70 | 2020 |
| Ti and its alloys as examples of cryogenic focused ion beam milling of environmentally-sensitive materials Y Chang, W Lu, J Guénolé, LT Stephenson, A Szczpaniak, P Kontis, ... Nature communications 10 (1), 1-10, 2019 | 68 | 2019 |
| Mo-doped BiVO 4 thin films–high photoelectrochemical water splitting performance achieved by a tailored structure and morphology M Rohloff, B Anke, S Zhang, U Gernert, C Scheu, M Lerch, A Fischer Sustainable Energy & Fuels 1 (8), 1830-1846, 2017 | 68 | 2017 |
| Mg Doping Affects Dislocation Core Structures in GaN SK Rhode, MK Horton, MJ Kappers, S Zhang, CJ Humphreys, RO Dusane, ... Physical review letters 111 (2), 025502, 2013 | 55 | 2013 |
| Ag-segregation to dislocations in PbTe-based thermoelectric materials Y Yu, S Zhang, AM Mio, B Gault, A Sheskin, C Scheu, D Raabe, F Zu, ... ACS applied materials & interfaces 10 (4), 3609-3615, 2018 | 52 | 2018 |
| Photoelectrochemical water splitting strongly enhanced in fast-grown ZnO nanotree and nanocluster structures X Ren, A Sangle, S Zhang, S Yuan, Y Zhao, L Shi, RLZ Hoye, S Cho, D Li, ... Journal of Materials Chemistry A 4 (26), 10203-10211, 2016 | 49 | 2016 |
| Why tin‐doping enhances the efficiency of hematite photoanodes for water splitting—the full picture AG Hufnagel, H Hajiyani, S Zhang, T Li, O Kasian, B Gault, B Breitbach, ... Advanced functional materials 28 (52), 1804472, 2018 | 46 | 2018 |
| Evaluation of EELS spectrum imaging data by spectral components and factors from multivariate analysis S Zhang, C Scheu Microscopy 67 (suppl_1), i133-i141, 2018 | 42 | 2018 |
| Revealing nano-chemistry at lattice defects in thermoelectric materials using atom probe tomography Y Yu, C Zhou, S Zhang, M Zhu, M Wuttig, C Scheu, D Raabe, GJ Snyder, ... Materials Today 32, 260-274, 2020 | 35 | 2020 |
| The dissociation of the [a+ c] dislocation in GaN PB Hirsch, JG Lozano, S Rhode, MK Horton, MA Moram, S Zhang, ... Philosophical Magazine 93 (28-30), 3925-3938, 2013 | 33 | 2013 |
| The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ... Ultramicroscopy 176, 93-98, 2017 | 32 | 2017 |
| Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ... Nano letters 15 (11), 7639-7643, 2015 | 31 | 2015 |
Christina ScheuMPIEVerified email at mpie.de
