| Piezoelectric coefficients and spontaneous polarization of ScAlN MA Caro, S Zhang, T Riekkinen, M Ylilammi, MA Moram, ... Journal of Physics: Condensed Matter 27 (24), 245901, 2015 | 86 | 2015 |
| Microstructure evolution and deformation behavior of ultrafine-grained Al–Zn–Mg alloys with fine η′ precipitates S Zhang, W Hu, R Berghammer, G Gottstein Acta Materialia 58 (20), 6695-6705, 2010 | 65 | 2010 |
| Elastic constants and critical thicknesses of ScGaN and ScAlN S Zhang, WY Fu, D Holec, CJ Humphreys, MA Moram Journal of Applied Physics 114 (24), 243516, 2013 | 49 | 2013 |
| Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram Journal of Applied Physics 114 (13), 133510, 2013 | 49 | 2013 |
| Atomic-scale insights into surface species of electrocatalysts in three dimensions T Li, O Kasian, S Cherevko, S Zhang, S Geiger, C Scheu, P Felfer, ... Nature Catalysis 1 (4), 300, 2018 | 48 | 2018 |
| ScGaN and ScAlN: emerging nitride materials MA Moram, S Zhang Journal of Materials Chemistry A 2 (17), 6042-6050, 2014 | 46 | 2014 |
| Simultaneous optimization of electrical and thermal transport properties of Bi0.5Sb1.5Te3 thermoelectric alloy by twin boundary engineering Y Yu, DS He, S Zhang, O Cojocaru-Mirédin, T Schwarz, A Stoffers, ... Nano Energy 37, 203-213, 2017 | 41 | 2017 |
| Mg Doping Affects Dislocation Core Structures in GaN SK Rhode, MK Horton, MJ Kappers, S Zhang, CJ Humphreys, RO Dusane, ... Physical review letters 111 (2), 025502, 2013 | 39 | 2013 |
| The dissociation of the [a+ c] dislocation in GaN PB Hirsch, JG Lozano, S Rhode, MK Horton, MA Moram, S Zhang, ... Philosophical Magazine 93 (28-30), 3925-3938, 2013 | 26 | 2013 |
| Mo-doped BiVO 4 thin films–high photoelectrochemical water splitting performance achieved by a tailored structure and morphology M Rohloff, B Anke, S Zhang, U Gernert, C Scheu, M Lerch, A Fischer Sustainable Energy & Fuels 1 (8), 1830-1846, 2017 | 24 | 2017 |
| Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ... Nano letters 15 (11), 7639-7643, 2015 | 23 | 2015 |
| The microstructure of non-polar a-plane (112¯ 0) InGaN quantum wells JT Griffiths, F Oehler, F Tang, S Zhang, WY Fu, T Zhu, SD Findlay, ... Journal of Applied Physics 119 (17), 175703, 2016 | 22 | 2016 |
| Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride JG Lozano, H Yang, MP Guerrero-Lebrero, AJ D’Alfonso, A Yasuhara, ... Physical review letters 113 (13), 135503, 2014 | 21 | 2014 |
| The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ... Ultramicroscopy 176, 93-98, 2017 | 18 | 2017 |
| Ag-segregation to dislocations in PbTe-based thermoelectric materials Y Yu, S Zhang, AM Mio, B Gault, A Sheskin, C Scheu, D Raabe, F Zu, ... ACS applied materials & interfaces 10 (4), 3609-3615, 2018 | 17 | 2018 |
| Evaluation of EELS spectrum imaging data by spectral components and factors from multivariate analysis S Zhang, C Scheu Microscopy 67 (suppl_1), i133-i141, 2018 | 16 | 2018 |
| Growth, microstructure and morphology of epitaxial ScGaN films SM Knoll, S Zhang, TB Joyce, MJ Kappers, CJ Humphreys, MA Moram physica status solidi (a) 209 (1), 33-40, 2012 | 15 | 2012 |
| Role of Nanostructuring and Microstructuring in Silver Antimony Telluride Compounds for Thermoelectric Applications O Cojocaru-Mirédin, L Abdellaoui, M Nagli, S Zhang, Y Yu, C Scheu, ... ACS Applied Materials & Interfaces 9 (17), 14779-14790, 2017 | 14 | 2017 |
| Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions SM Knoll, SK Rhode, S Zhang, TB Joyce, MA Moram Applied Physics Letters 104 (10), 101906, 2014 | 14 | 2014 |
| Why Tin‐Doping Enhances the Efficiency of Hematite Photoanodes for Water Splitting—The Full Picture AG Hufnagel, H Hajiyani, S Zhang, T Li, O Kasian, B Gault, B Breitbach, ... Advanced Functional Materials 28 (52), 1804472, 2018 | 10 | 2018 |
Christina ScheuMPIEVerified email at mpie.de
