Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ...
IEEE Transactions on Electron Devices 66 (6), 2544-2550, 2019
39 2019 Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava
IEEE Transactions on Electron Devices 68 (11), 5720-5727, 2021
22 2021 On the channel hot-electron’s interaction with C-doped GaN buffer and resultant gate degradation in AlGaN/GaN HEMTs RR Chaudhuri, V Joshi, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices 68 (10), 4869-4876, 2021
21 2021 Interplay between surface and buffer traps in governing breakdown characteristics of AlGaN/GaN HEMTs—Part II V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava
IEEE Transactions on Electron Devices 68 (1), 80-87, 2020
16 2020 On the ESD behavior of AlGaN/GaN Schottky diodes and trap assisted failure mechanism B Shankar, R Sengupta, SD Gupta, A Soni, N Mohan, N Bhat, ...
2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2017
14 2017 Physical insights into the impact of surface traps on breakdown characteristics of AlGaN/GaN HEMTs—Part I V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava
IEEE Transactions on Electron Devices 68 (1), 72-79, 2020
13 2020 Novel surface passivation scheme by using p-type AlTiO to mitigate dynamic ON resistance behavior in AlGaN/GaN HEMTs—Part II SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava
IEEE Transactions on Electron Devices 68 (11), 5728-5735, 2021
10 2021 Trap assisted stress induced ESD reliability of GaN schottky diodes B Shankar, R Singh, R Sengupta, H Khand, A Soni, SD Gupta, ...
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2018
10 2018 ECR Plasma Enhanced Film Deposition System GS Taki, JBM Krishna, SD Gupta, S Karmakar, SK Kundu
J. Phys 59, 77, 2016
9 2016 Physical insights into electron trapping mechanism in the carbon-doped GaN buffer in AlGaN/GaN HEMTs and its impact on dynamic on-resistance V Joshi, RR Chaudhuri, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices, 2023
7 2023 Time dependent shift in SOA boundary and early breakdown of epi-stack in AlGaN/GaN HEMTs under fast cyclic transient stress B Shankar, S Shikha, A Singh, J Kumar, A Soni, SD Gupta, S Raghavan, ...
IEEE Transactions on Device and Materials Reliability 20 (3), 562-569, 2020
7 2020 ESD behavior of AlGaN/GaN Schottky diodes B Shankar, SD Gupta, A Soni, S Raghavan, M Shrivastava
IEEE Transactions on Device and Materials Reliability 19 (2), 437-444, 2019
7 2019 Time dependent early breakdown of AIGaN/GaN epi stacks and shift in SOA boundary of HEMTs under fast cyclic transient stress B Shankar, A Soni, SD Gupta, S Shikha, S Singh, S Raghavan, ...
2018 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2018
6 2018 Safe operating area (SOA) reliability of polarization super junction (PSJ) GaN FETs B Shankar, A Soni, SD Gupta, M Shrivastava
2018 IEEE International Reliability Physics Symposium (IRPS), 4E. 3-1-4E. 3-4, 2018
6 2018 Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic R ON of AlGaN/GaN HEMTs Under Semi-on State SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava
IEEE Transactions on Electron Devices 69 (12), 6934-6939, 2022
5 2022 Interplay of device design and carbon-doped GaN buffer parameters in determining dynamic in AlGaN/GaN HEMTs V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava
IEEE Transactions on Electron Devices 69 (11), 6035-6042, 2022
5 2022 Unique gate bias dependence of dynamic on-resistance in MIS-gated AlGaN/GaN HEMTs and its dependence on gate control over the 2-DEG SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava
IEEE Transactions on Electron Devices 69 (3), 1608-1611, 2022
5 2022 On the root cause of dynamic ON resistance behavior in AlGaN/GaN HEMTs SD Gupta, V Joshi, RR Chaudhuri, A kr Singh, S Guha, M Shrivastava
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
4 2020 Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices 70 (12), 6183-6189, 2023
3 2023 Observations and physical insights into time-dependent hot electron current confinement in AlGaN/GaN HEMTs on C-doped GaN buffer RR Chaudhuri, V Joshi, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices 69 (12), 6602-6609, 2022
3 2022 
Mayank ShrivastavaIndian Institute of Science BangaloreBestätigte E-Mail-Adresse bei iisc.ac.in
