Epitaxial BiFeO3 multiferroic thin film heterostructures J Wang, JB Neaton, H Zheng, V Nagarajan, SB Ogale, B Liu, D Viehland, ... science 299 (5613), 1719-1722, 2003 | 7567* | 2003 |
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor A Das, S Pisana, B Chakraborty, S Piscanec, SK Saha, UV Waghmare, ... Nature nanotechnology 3 (4), 210-215, 2008 | 4139 | 2008 |
Synthesis, structure, and properties of boron‐and nitrogen‐doped graphene LS Panchakarla, KS Subrahmanyam, SK Saha, A Govindaraj, ... Advanced Materials 21 (46), 4726-4730, 2009 | 2056 | 2009 |
First-principles study of spontaneous polarization in multiferroic JB Neaton, C Ederer, UV Waghmare, NA Spaldin, KM Rabe Physical Review B—Condensed Matter and Materials Physics 71 (1), 014113, 2005 | 1701 | 2005 |
Sensing Behavior of Atomically Thin-Layered MoS2 Transistors DJ Late, YK Huang, B Liu, J Acharya, SN Shirodkar, J Luo, A Yan, ... ACS nano 7 (6), 4879-4891, 2013 | 1390 | 2013 |
Symmetry-dependent phonon renormalization in monolayer MoS transistor B Chakraborty, A Bera, DVS Muthu, S Bhowmick, UV Waghmare, ... Physical Review B—Condensed Matter and Materials Physics 85 (16), 161403, 2012 | 1206 | 2012 |
Accurate first-principles structures and energies of diversely bonded systems from an efficient density functional J Sun, RC Remsing, Y Zhang, Z Sun, A Ruzsinszky, H Peng, Z Yang, ... Nature chemistry 8 (9), 831-836, 2016 | 951 | 2016 |
Graphene analogues of BN: novel synthesis and properties A Nag, K Raidongia, KPSS Hembram, R Datta, UV Waghmare, CNR Rao ACS nano 4 (3), 1539-1544, 2010 | 832 | 2010 |
Lattice dynamics of BaTiO 3, PbTiO 3, and PbZrO 3: A comparative first-principles study P Ghosez, E Cockayne, UV Waghmare, KM Rabe Physical Review B 60 (2), 836, 1999 | 554 | 1999 |
First Principles Based Design and Experimental Evidence for a ZnO-Based Ferromagnet<? format?> at Room Temperature MHF Sluiter, Y Kawazoe, P Sharma, A Inoue, AR Raju, C Rout, ... Physical review letters 94 (18), 187204, 2005 | 548 | 2005 |
Mg alloying in SnTe facilitates valence band convergence and optimizes thermoelectric properties A Banik, US Shenoy, S Anand, UV Waghmare, K Biswas Chemistry of Materials 27 (2), 581-587, 2015 | 444 | 2015 |
Near-Room-Temperature Colossal Magnetodielectricity and Multiglass Properties <?format ?>in Partially Disordered D Choudhury, P Mandal, R Mathieu, A Hazarika, S Rajan, A Sundaresan, ... Physical review letters 108 (12), 127201, 2012 | 437 | 2012 |
Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe2 S Roychowdhury, T Ghosh, R Arora, M Samanta, L Xie, NK Singh, A Soni, ... Science 371 (6530), 722-727, 2021 | 434 | 2021 |
Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a Monolayer of SN Shirodkar, UV Waghmare Physical review letters 112 (15), 157601, 2014 | 431 | 2014 |
Theoretical prediction of new high-performance lead-free piezoelectrics P Baettig, CF Schelle, R LeSar, UV Waghmare, NA Spaldin Chemistry of materials 17 (6), 1376-1380, 2005 | 407 | 2005 |
First-principles indicators of metallicity and cation off-centricity in the IV-VI rocksalt chalcogenides of divalent Ge, Sn, and Pb UV Waghmare, NA Spaldin, HC Kandpal, R Seshadri Physical Review B 67 (12), 125111, 2003 | 382 | 2003 |
Ab initio statistical mechanics of the ferroelectric phase transition in PbTiO 3 UV Waghmare, KM Rabe Physical Review B 55 (10), 6161, 1997 | 363 | 1997 |
Scale-free ferroelectricity induced by flat phonon bands in HfO2 HJ Lee, M Lee, K Lee, J Jo, H Yang, Y Kim, SC Chae, U Waghmare, ... Science 369 (6509), 1343-1347, 2020 | 346 | 2020 |
Thermal Expansion, Anharmonicity and Temperature‐Dependent Raman Spectra of Single‐ and Few‐Layer MoSe2 and WSe2 DJ Late, SN Shirodkar, UV Waghmare, VP Dravid, CNR Rao ChemPhysChem 15 (8), 1592-1598, 2014 | 306 | 2014 |
Chemical storage of hydrogen in few-layer graphene KS Subrahmanyam, P Kumar, U Maitra, A Govindaraj, K Hembram, ... Proceedings of the National Academy of Sciences 108 (7), 2674-2677, 2011 | 275 | 2011 |