Eilam Yalon
Title
Cited by
Cited by
Year
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
1352019
Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ...
Nano letters 17 (6), 3429-3433, 2017
1012017
Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry
E Yalon, OB Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ...
ACS applied materials & interfaces 9 (49), 43013-43020, 2017
632017
Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2
L Cai, CJ McClellan, AL Koh, H Li, E Yalon, E Pop, X Zheng
Nano letters 17 (6), 3854-3861, 2017
462017
Resistive Switching inProbed by a Metal–Insulator–Semiconductor Bipolar Transistor
E Yalon, A Gavrilov, S Cohen, D Mistele, B Meyler, J Salzman, D Ritter
IEEE electron device letters 33 (1), 11-13, 2011
322011
Detection of the insulating gap and conductive filament growth direction in resistive memories
E Yalon, I Karpov, V Karpov, I Riess, D Kalaev, D Ritter
Nanoscale 7 (37), 15434-15441, 2015
302015
Evaluation of the local temperature of conductive filaments in resistive switching materials
E Yalon, S Cohen, A Gavrilov, D Ritter
Nanotechnology 23 (46), 465201, 2012
302012
Spatially resolved thermometry of resistive memory devices
E Yalon, S Deshmukh, MM Rojo, F Lian, CM Neumann, F Xiong, E Pop
Scientific reports 7 (1), 1-8, 2017
272017
Heat dissipation in resistive switching devices: Comparison of thermal simulations and experimental results
E Yalon, I Riess, D Ritter
IEEE Transactions on Electron Devices 61 (4), 1137-1144, 2014
262014
Nanoscale Heterogeneities in Monolayer MoSe2 Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy
KKH Smithe, AV Krayev, CS Bailey, HR Lee, E Yalon, OB Aslan, ...
ACS Applied Nano Materials 1 (2), 572-579, 2018
252018
Thermometry of filamentary RRAM devices
E Yalon, AA Sharma, M Skowronski, JA Bain, D Ritter, IV Karpov
IEEE Transactions on Electron Devices 62 (9), 2972-2977, 2015
252015
Towards ultimate scaling limits of phase-change memory
F Xiong, E Yalon, A Behnam, CM Neumann, KL Grosse, S Deshmukh, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2016
222016
Research Update: Recent progress on 2D materials beyond graphene: From ripples, defects, intercalation, and valley dynamics to straintronics and power dissipation
Z Lin, Y Lei, S Subramanian, N Briggs, Y Wang, CL Lo, E Yalon, D Lloyd, ...
APL Materials 6 (8), 080701, 2018
172018
Effective n-type doping of monolayer MoS2by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
172017
On the direction of the conductive filament growth in valence change memory devices during electroforming
D Kalaev, E Yalon, I Riess
Solid State Ionics 276, 9-17, 2015
162015
Dual-layer dielectric stack for thermally isolated low-energy phase-change memory
SW Fong, CM Neumann, E Yalon, MM Rojo, E Pop, HSP Wong
IEEE Transactions on Electron Devices 64 (11), 4496-4502, 2017
142017
On the diameter dependence of metal-nanowire Schottky barrier height
Y Calahorra, E Yalon, D Ritter
Journal of Applied Physics 117 (3), 034308, 2015
122015
Thermal transport across graphene step junctions
MM Rojo, Z Li, C Sievers, AC Bornstein, E Yalon, S Deshmukh, S Vaziri, ...
2D Materials 6 (1), 011005, 2018
112018
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
S Vaziri, E Yalon, MM Rojo, SV Suryavanshi, H Zhang, CJ McClellan, ...
Science advances 5 (8), eaax1325, 2019
102019
Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects
X Jing, Y Illarionov, E Yalon, P Zhou, T Grasser, Y Shi, M Lanza
Advanced Functional Materials 30 (18), 1901971, 2020
92020
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