Oliver Brandt
Oliver Brandt
Bestätigte E-Mail-Adresse bei - Startseite
Zitiert von
Zitiert von
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
P Waltereit, O Brandt, A Trampert, HT Grahn, J Menniger, M Ramsteiner, ...
nature 406 (6798), 865-868, 2000
Colossal magnetic moment of Gd in GaN
S Dhar, O Brandt, M Ramsteiner, VF Sapega, KH Ploog
Physical Review Letters 94 (3), 037205, 2005
Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy
S Ghosh, P Waltereit, O Brandt, HT Grahn, KH Ploog
Physical Review-Section B-Condensed Matter 65 (7), 75202-75202, 2002
X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
VM Kaganer, O Brandt, A Trampert, KH Ploog
Physical Review B 72 (4), 045423, 2005
Direct measurement of local lattice distortions in strained layer structures by HREM
R Bierwolf, M Hohenstein, F Phillipp, O Brandt, GE Crook, K Ploog
Ultramicroscopy 49 (1-4), 273-285, 1993
Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy
S Dhar, O Brandt, A Trampert, L Daweritz, KJ Friedland, KH Ploog, ...
Applied physics letters 82 (13), 2077-2079, 2003
Suitability of Au-and self-assisted GaAs nanowires for optoelectronic applications
S Breuer, C Pfuller, T Flissikowski, O Brandt, HT Grahn, L Geelhaar, ...
Nano letters 11 (3), 1276-1279, 2011
Surface reconstructions of zinc-blende GaN/GaAs (001) in plasma-assisted molecular-beam epitaxy
O Brandt, H Yang, B Jenichen, Y Suzuki, L Däweritz, KH Ploog
Physical Review B 52 (4), R2253, 1995
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ...
Nano Research 3, 528-536, 2010
Impact of nucleation conditions on the structural and optical properties of M-plane GaN (1-100) grown on γ-LiAlO2
YJ Sun, O Brandt, U Jahn, TY Liu, A Trampert, S Cronenberg, S Dhar, ...
Journal of applied physics 92 (10), 5714-5719, 2002
Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence
J Menniger, U Jahn, O Brandt, H Yang, K Ploog
Physical Review B 53 (4), 1881, 1996
Growth of M-plane GaN (1-100) on γ-LiAlO2(100)
P Waltereit, O Brandt, M Ramsteiner, R Uecker, P Reiche, KH Ploog
Journal of crystal growth 218 (2), 143-147, 2000
High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
O Brandt, H Yang, H Kostial, KH Ploog
Applied physics letters 69 (18), 2707-2709, 1996
Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K
S Dhar, L Pérez, O Brandt, A Trampert, KH Ploog, J Keller, B Beschoten
Physical Review B 72 (24), 245203, 2005
Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC (0001)
P Waltereit, O Brandt, A Trampert, M Ramsteiner, M Reiche, M Qi, ...
Applied physics letters 74 (24), 3660-3662, 1999
Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy
M Giehler, M Ramsteiner, O Brandt, H Yang, KH Ploog
Applied physics letters 67 (6), 733-735, 1995
Luminescence associated with stacking faults in GaN
J Lähnemann, U Jahn, O Brandt, T Flissikowski, P Dogan, HT Grahn
Journal of Physics D: Applied Physics 47 (42), 423001, 2014
Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments
U Jahn, J Lähnemann, C Pfüller, O Brandt, S Breuer, B Jenichen, ...
Physical Review B 85 (4), 045323, 2012
Observation of spin-glass behavior in homogeneous (Ga, Mn) N layers grown by reactive molecular-beam epitaxy
S Dhar, O Brandt, A Trampert, KJ Friedland, YJ Sun, KH Ploog
Physical Review B 67 (16), 165205, 2003
Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons
O Brandt, C Pfüller, C Chèze, L Geelhaar, H Riechert
Physical review b 81 (4), 045302, 2010
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20