Characteristics of HfO2 thin films grown by plasma atomic layer deposition J Kim, S Kim, H Jeon, MH Cho, KB Chung, C Bae
Applied Physics Letters 87 (5), 2005
89 2005 Methods for identifying an allowable process margin for integrated circuits C Bae, YS Jin
US Patent 7,642,106, 2010
81 2010 Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote-and direct-plasma atomic layer deposition methods J Kim, S Kim, H Kang, J Choi, H Jeon, M Cho, K Chung, S Back, K Yoo, ...
Journal of applied physics 98 (9), 2005
60 2005 Surface passivation of n-GaN by nitrided-thin-Ga2O3∕ SiO2 and Si3N4 films C Bae, C Krug, G Lucovsky, A Chakraborty, U Mishra
Journal of applied physics 96 (5), 2674-2680, 2004
54 2004 Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process C Bae, G Lucovsky
Journal of Vacuum Science & Technology A 22 (6), 2402-2410, 2004
37 2004 Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics C Bae, C Krug, G Lucovsky
Journal of Vacuum Science & Technology A 22 (6), 2379-2383, 2004
35 2004 Suppression of parasitic Si substrate oxidation in HfO2–ultrathin-Al2O3–Si structures prepared by atomic layer deposition M Park, J Koo, J Kim, H Jeon, C Bae, C Krug
Applied Physics Letters 86 (25), 2005
34 2005 Abnormal Grain Growth of Niobium‐Doped Strontium Titanate Ceramics C Bae, JG Park, YH Kim, H Jeon
Journal of the American Ceramic Society 81 (11), 3005-3009, 1998
26 1998 Effects of remote plasma nitridation on the structural and electrical characteristics of the gate dielectrics grown using remote plasma atomic layer deposition … J Choi, S Kim, J Kim, H Kang, H Jeon, C Bae
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24 (4 …, 2006
22 2006 Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma S Kim, J Kim, J Choi, H Kang, H Jeon, C Bae
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
20 2006 Method of correcting a design pattern for an integrated circuit and an apparatus for performing the same C Bae, JH Kim, YS Jin, DH Lee
US Patent 7,840,917, 2010
17 2010 Semiconductor device including work function control film patterns and method for fabricating the same CS Yu, C Bae, J Kim, CM Hong
US Patent 9,064,732, 2015
15 2015 Work-function difference between Al and n-GaN from Al-gated n-GaN∕ nitrided-thin-Ga2O3∕ SiO2 metal oxide semiconductor structures C Bae, C Krug, G Lucovsky, A Chakraborty, U Mishra
Applied physics letters 84 (26), 5413-5415, 2004
15 2004 Effect of buffer layer for HfO2 gate dielectrics grown by remote plasma atomic layer deposition S Kim, S Woo, H Hong, H Kim, H Jeon, C Bae
Journal of the Electrochemical Society 154 (2), H97, 2006
12 2006 Effects of remote plasma pre-oxidation of Si substrates on the characteristics of ALD-deposited HfO2 gate dielectrics H Kang, S Kim, J Choi, J Kim, H Jeon, C Bae
Electrochemical and solid-state letters 9 (6), G211, 2006
11 2006 Device-quality GaN–dielectric interfaces by 300 C remote plasma processing C Bae, GB Rayner, G Lucovsky
Applied surface science 216 (1-4), 119-123, 2003
11 2003 Low temperature semiconductor surface passivation for nanoelectronic device applications C Bae, G Lucovsky
Surface science 532, 759-763, 2003
10 2003 Ex situ growth of the c -axis preferred oriented thin films on substratesC Bae, JK Lee, SH Lee, HJ Jung
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (5 …, 1999
10 1999 Reductions in interface defects, Dit, by post oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices C Bae, G Lucovsky
Microelectronic engineering 72 (1-4), 236-240, 2004
9 2004 Monitoring pattern for detecting a defect in a semiconductor device and method for detecting a defect C Bae, YW Han, MJ Lee, SD Kwon
US Patent 7,733,099, 2010
8 2010