Folgen
Gwan-Hyoung Lee
Gwan-Hyoung Lee
Professor, Materials Science and Engineering, Seoul National University
Bestätigte E-Mail-Adresse bei snu.ac.kr - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Tightly bound trions in monolayer MoS2
KF Mak, K He, C Lee, GH Lee, J Hone, TF Heinz, J Shan
Nature materials 12 (3), 207-211, 2012
30152012
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
AM van der Zande, PY Huang, DA Chenet, TC Berkelbach, YM You, ...
Nature materials 12, 554–561, 2013
23362013
Atomically thin pn junctions with van der Waals heterointerfaces
CH Lee, GH Lee, AM van der Zande, W Chen, Y Li, M Han, X Cui, G Arefe, ...
Nature Nanotechnology 9, 676-681, 2014
23022014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ...
Nature Nanotechnology, 2015
13542015
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ...
ACS nano 7 (9), 7931-7936, 2013
12052013
High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries
GH Lee, RC Cooper, SJ An, S Lee, A van der Zande, N Petrone, ...
Science 340 (6136), 1073-1076, 2013
9642013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
MS Choi, GH Lee, YJ Yu, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo
Nature communications 4, 1624, 2013
7442013
Effect of defects on the intrinsic strength and stiffness of graphene
A Zandiatashbar, GH Lee, SJ An, S Lee, N Mathew, M Terrones, ...
Nature communications 5, 3186, 2014
7032014
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
GH Lee, YJ Yu, C Lee, C Dean, KL Shepard, P Kim, J Hone
Applied Physics Letters 99 (24), 243114, 2011
5682011
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ...
ACS nano 9 (7), 7019-7026, 2015
4452015
Measurement of Lateral and Interfacial Thermal Conductivity of Single-and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique
X Zhang, D Sun, Y Li, GH Lee, X Cui, D Chenet, Y You, TF Heinz, ...
ACS Applied Materials & Interfaces 7 (46), 25923-25929, 2015
3352015
Graphene mechanical oscillators with tunable frequency
C Chen, S Lee, VV Deshpande, GH Lee, M Lekas, K Shepard, J Hone
Nature nanotechnology 8 (12), 923-927, 2013
3292013
Graphene based heterostructures
C Dean, AF Young, L Wang, I Meric, GH Lee, K Watanabe, T Taniguchi, ...
Solid State Communications 152 (15), 1275-1282, 2012
2842012
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge
S Kang, D Lee, J Kim, A Capasso, HS Kang, JW Park, CH Lee, GH Lee
2D Materials 7 (2), 022003, 2020
1952020
Phase engineering of two‐dimensional transition metal dichalcogenides
JH Kim, H Sung, GH Lee
Small Science, 2300093, 2019
1842019
Effect of surface morphology on friction of graphene on various substrates
DH Cho, L Wang, JS Kim, GH Lee, ES Kim, S Lee, SY Lee, J Hone, C Lee
Nanoscale 5 (7), 3063-3069, 2013
1792013
Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices
S Rathi, I Lee, D Lim, J Wang, Y Ochiai, N Aoki, K Watanabe, T Taniguchi, ...
Nano letters 15 (8), 5017-5024, 2015
1692015
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
J Kwon, JY Lee, YJ Yu, CH Lee, X Cui, J Hone, GH Lee
Nanoscale 9 (18), 6151-6157, 2017
1512017
Mechanical properties of two-dimensional materials and their applications
JH Kim, JH Jeong, N Kim, R Joshi, GH Lee
Journal of Physics D: Applied Physics 52 (8), 083001, 2018
1462018
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures
JY Lee, JH Shin, GH Lee, CH Lee
Nanomaterials 6 (11), 193, 2016
1442016
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20